Part Details for IRF610PBF by Vishay Siliconix
Results Overview of IRF610PBF by Vishay Siliconix
- Distributor Offerings: (4 listings)
- Number of FFF Equivalents: (5 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Industrial Automation
Energy and Power Systems
Renewable Energy
Motor control systems
IRF610PBF Information
IRF610PBF by Vishay Siliconix is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IRF610PBF
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
IRF610PBF-ND
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DigiKey | MOSFET N-CH 200V 3.3A TO220AB Min Qty: 1 Lead time: 15 Weeks Container: Tube |
11602 In Stock |
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$0.2976 / $0.7000 | Buy Now |
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DISTI #
70459369
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RS | MOSFET N-CH 200V 3.3A TO-220AB Min Qty: 1000 Package Multiple: 1 Container: Bulk | 0 |
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$0.9000 / $1.0600 | RFQ |
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Quest Components | 476 |
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$0.6360 / $1.5900 | Buy Now | |
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New Advantage Corporation | Single N-Channel 200 V 1.5 Ohms Flange Mount Power Mosfet - TO-220AB RoHS: Compliant Min Qty: 1 Package Multiple: 50 | 12150 |
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$0.4692 / $0.5083 | Buy Now |
Part Details for IRF610PBF
IRF610PBF CAD Models
IRF610PBF Part Data Attributes
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IRF610PBF
Vishay Siliconix
Buy Now
Datasheet
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Compare Parts:
IRF610PBF
Vishay Siliconix
Power Field-Effect Transistor, 3.3A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, TO-220, 3 PIN
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| Rohs Code | Yes | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | VISHAY SILICONIX | |
| Part Package Code | TO-220AB | |
| Package Description | ROHS COMPLIANT, TO-220, 3 PIN | |
| Pin Count | 3 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Additional Feature | AVALANCHE RATED | |
| Avalanche Energy Rating (Eas) | 64 mJ | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 200 V | |
| Drain Current-Max (ID) | 3.3 A | |
| Drain-source On Resistance-Max | 1.5 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 10 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IRF610PBF
This table gives cross-reference parts and alternative options found for IRF610PBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF610PBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| IRF611 | Rochester Electronics LLC | Check for Price | 3.3A, 150V, 1.5ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | IRF610PBF vs IRF611 |
| IRF610PBF | International Rectifier | Check for Price | Power Field-Effect Transistor, 3.3A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3 | IRF610PBF vs IRF610PBF |
| IRF610 | International Rectifier | Check for Price | Power Field-Effect Transistor, 3.3A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | IRF610PBF vs IRF610 |
| RFP2N12 | Rochester Electronics LLC | Check for Price | 2A, 120V, 1.75ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | IRF610PBF vs RFP2N12 |
| IRF613 | Rochester Electronics LLC | Check for Price | 2.6A, 150V, 2.4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | IRF610PBF vs IRF613 |
IRF610PBF Frequently Asked Questions (FAQ)
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The maximum operating temperature range for the IRF610PBF is -55°C to 175°C.
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To ensure proper biasing, the gate-source voltage (Vgs) should be between 2V to 4V for optimal performance. Additionally, the drain-source voltage (Vds) should be within the recommended range of 200V.
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The recommended gate resistor value for the IRF610PBF is typically between 1kΩ to 10kΩ, depending on the specific application and switching frequency.
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To protect the IRF610PBF from overvoltage and overcurrent, it is recommended to use a voltage clamp or a zener diode to limit the voltage, and a current sense resistor to monitor the current. Additionally, a fuse or a current limiter can be used to prevent overcurrent conditions.
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The maximum allowable power dissipation for the IRF610PBF is 125W at a case temperature of 25°C. However, this value can be derated based on the operating temperature and other factors.