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Part Details for IRF610PBF by Vishay Intertechnologies
Results Overview of IRF610PBF by Vishay Intertechnologies
- Distributor Offerings: (18 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (8 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Industrial Automation
Energy and Power Systems
Renewable Energy
Motor control systems
IRF610PBF Information
IRF610PBF by Vishay Intertechnologies is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IRF610PBF
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
38K2811
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Newark | Mosfet, N-Ch, 200V, 3.3A, To-220Ab, Channel Type:N Channel, Drain Source Voltage Vds:200V, Continuous Drain Current Id:3.3A, Transistor Mounting:Through Hole, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:4V Rohs Compliant: Yes |Vishay IRF610PBF RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk | 898 |
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$0.6840 / $0.8440 | Buy Now |
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DISTI #
IRF610PBF
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Avnet Americas | Power MOSFET, N Channel, 200 V, 3.3 A, 1.5 ohm, TO-220AB, Through Hole - Bulk (Alt: IRF610PBF) RoHS: Compliant Min Qty: 1000 Package Multiple: 1 Lead time: 8 Weeks, 0 Days Container: Bulk | 8188 |
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$0.5737 | Buy Now |
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DISTI #
IRF610PBF
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Avnet Americas | Power MOSFET, N Channel, 200 V, 3.3 A, 1.5 ohm, TO-220AB, Through Hole - Bulk (Alt: IRF610PBF) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 8 Weeks, 0 Days Container: Bulk | 0 |
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RFQ | |
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DISTI #
844-IRF610PBF
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Mouser Electronics | MOSFETs TO220 200V 3.3A N-CH MOSFET RoHS: Compliant | 2521 |
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$0.2870 / $0.5500 | Buy Now |
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DISTI #
E02:0323_00193814
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Arrow Electronics | Trans MOSFET N-CH 200V 3.3A 3-Pin(3+Tab) TO-220AB RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 8 Weeks Date Code: 2514 | Europe - 4114 |
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$0.2713 / $0.3725 | Buy Now |
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DISTI #
V36:1790_07431702
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Arrow Electronics | Trans MOSFET N-CH 200V 3.3A 3-Pin(3+Tab) TO-220AB RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 8 Weeks Date Code: 2427 | Americas - 445 |
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$0.2690 / $0.3700 | Buy Now |
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DISTI #
70078852
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RS | MOSFET, Power, N-Ch, VDSS 200V, RDS(ON) 1.5 Ohms, ID 3.3A, TO-220AB, PD 36W, VGS +/-20V Min Qty: 1000 Package Multiple: 1 Container: Bulk | 1000 |
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$0.8100 / $0.9000 | Buy Now |
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Future Electronics | Single N-Channel 200 V 1.5 Ohms Flange Mount Power Mosfet - TO-220AB RoHS: Compliant pbFree: Yes Min Qty: 1 Package Multiple: 1 Container: Tube | 8944Tube |
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$0.2700 / $0.3050 | Buy Now |
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DISTI #
87766852
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Verical | Trans MOSFET N-CH 200V 3.3A 3-Pin(3+Tab) TO-220AB RoHS: Compliant Min Qty: 100 Package Multiple: 50 Date Code: 2446 | Americas - 5350 |
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$0.5390 | Buy Now |
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DISTI #
88210402
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Verical | Trans MOSFET N-CH 200V 3.3A 3-Pin(3+Tab) TO-220AB RoHS: Compliant Min Qty: 33 Package Multiple: 1 Date Code: 2514 | Americas - 4114 |
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$0.3383 / $0.7956 | Buy Now |
Part Details for IRF610PBF
IRF610PBF CAD Models
IRF610PBF Part Data Attributes
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IRF610PBF
Vishay Intertechnologies
Buy Now
Datasheet
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Compare Parts:
IRF610PBF
Vishay Intertechnologies
Power Field-Effect Transistor, 3.3A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT PACKAGE-3
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
| Part Package Code | TO-220AB | |
| Pin Count | 3 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Factory Lead Time | 8 Weeks | |
| Samacsys Manufacturer | Vishay | |
| Additional Feature | AVALANCHE RATED | |
| Avalanche Energy Rating (Eas) | 64 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 200 V | |
| Drain Current-Max (ID) | 3.3 A | |
| Drain-source On Resistance-Max | 1.5 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 36 W | |
| Pulsed Drain Current-Max (IDM) | 10 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IRF610PBF
This table gives cross-reference parts and alternative options found for IRF610PBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF610PBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| IRF610 | Motorola Semiconductor Products | Check for Price | Power Field-Effect Transistor, 2.5A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | IRF610PBF vs IRF610 |
| IRF610 | Vishay Intertechnologies | Check for Price | Power Field-Effect Transistor, 3.3A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | IRF610PBF vs IRF610 |
| IRF610 | Microsemi Corporation | Check for Price | Power Field-Effect Transistor, 3.3A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220 | IRF610PBF vs IRF610 |
| IRF610 | Motorola Mobility LLC | Check for Price | 2.5A, 200V, 1.5ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | IRF610PBF vs IRF610 |
| SIHF610 | Vishay Siliconix | Check for Price | TRANSISTOR 3.3 A, 200 V, 1.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220, 3 PIN, FET General Purpose Power | IRF610PBF vs SIHF610 |
| IRF610 | Fairchild Semiconductor Corporation | Check for Price | Power Field-Effect Transistor, 3.3A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | IRF610PBF vs IRF610 |
| IRF610L | Motorola Mobility LLC | Check for Price | 2.5A, 200V, 1.5ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | IRF610PBF vs IRF610L |
| IRF610LPBF | Vishay Intertechnologies | Check for Price | Power Field-Effect Transistor, 3.3A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, | IRF610PBF vs IRF610LPBF |
IRF610PBF Frequently Asked Questions (FAQ)
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The maximum operating temperature range for the IRF610PBF is -55°C to 175°C.
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To ensure reliability, ensure proper thermal management, use a suitable heat sink, and follow the recommended PCB layout and assembly guidelines.
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The maximum allowable voltage for the IRF610PBF is 200V.
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Yes, the IRF610PBF is suitable for switching regulator applications due to its low RDS(on) and high current handling capabilities.
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Handle the device by the body, use an anti-static wrist strap, and store the device in an anti-static bag to prevent ESD damage.