Part Details for IRF610PBF by International Rectifier
Results Overview of IRF610PBF by International Rectifier
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (5 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Consumer Electronics
Industrial Automation
Energy and Power Systems
Renewable Energy
Motor control systems
IRF610PBF Information
IRF610PBF by International Rectifier is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part Details for IRF610PBF
IRF610PBF CAD Models
IRF610PBF Part Data Attributes
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IRF610PBF
International Rectifier
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Datasheet
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IRF610PBF
International Rectifier
Power Field-Effect Transistor, 3.3A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | INTERNATIONAL RECTIFIER CORP | |
| Part Package Code | TO-220AB | |
| Package Description | LEAD FREE PACKAGE-3 | |
| Pin Count | 3 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Additional Feature | AVALANCHE RATED | |
| Avalanche Energy Rating (Eas) | 64 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 200 V | |
| Drain Current-Max (ID) | 3.3 A | |
| Drain-source On Resistance-Max | 1.5 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | 250 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation Ambient-Max | 36 W | |
| Power Dissipation-Max (Abs) | 36 W | |
| Pulsed Drain Current-Max (IDM) | 10 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | Matte Tin (Sn) - with Nickel (Ni) barrier | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IRF610PBF
This table gives cross-reference parts and alternative options found for IRF610PBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF610PBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| IRF611 | Rochester Electronics LLC | Check for Price | 3.3A, 150V, 1.5ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | IRF610PBF vs IRF611 |
| IRF610PBF | Vishay Siliconix | Check for Price | Power Field-Effect Transistor, 3.3A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, TO-220, 3 PIN | IRF610PBF vs IRF610PBF |
| IRF610 | International Rectifier | Check for Price | Power Field-Effect Transistor, 3.3A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | IRF610PBF vs IRF610 |
| RFP2N12 | Rochester Electronics LLC | Check for Price | 2A, 120V, 1.75ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | IRF610PBF vs RFP2N12 |
| IRF613 | Rochester Electronics LLC | Check for Price | 2.6A, 150V, 2.4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | IRF610PBF vs IRF613 |