Datasheets
IRF542 by:

24A, 100V, 0.11ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB

Part Details for IRF542 by Motorola Mobility LLC

Results Overview of IRF542 by Motorola Mobility LLC

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IRF542 Information

IRF542 by Motorola Mobility LLC is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Part Details for IRF542

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IRF542 Part Data Attributes

IRF542 Motorola Mobility LLC
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IRF542 Motorola Mobility LLC 24A, 100V, 0.11ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
Rohs Code No
Part Life Cycle Code Obsolete
Ihs Manufacturer MOTOROLA INC
Package Description FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code unknown
ECCN Code EAR99
HTS Code 8541.29.00.95
Additional Feature LEADFORM OPTIONS ARE AVAILABLE
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 100 V
Drain Current-Max (ID) 24 A
Drain-source On Resistance-Max 0.11 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 300 pF
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
JESD-609 Code e0
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation Ambient-Max 125 W
Power Dissipation-Max (Abs) 150 W
Pulsed Drain Current-Max (IDM) 96 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish TIN LEAD
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON
Turn-off Time-Max (toff) 110 ns
Turn-on Time-Max (ton) 90 ns

Alternate Parts for IRF542

This table gives cross-reference parts and alternative options found for IRF542. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF542, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
IRF542 TT Electronics Power and Hybrid / Semelab Limited Check for Price 25A, 100V, 0.1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN IRF542 vs IRF542
IRF540 Rochester Electronics LLC Check for Price 28A, 100V, 0.077ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB IRF542 vs IRF540
IRF542 International Rectifier Check for Price Power Field-Effect Transistor, 25A I(D), 100V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB IRF542 vs IRF542
IRF540 STMicroelectronics Check for Price 22A, 100V, 0.077ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220, 3 PIN IRF542 vs IRF540
IRF540 Microsemi Corporation Check for Price Power Field-Effect Transistor, 28A I(D), 100V, 0.077ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC PACKAGE-3 IRF542 vs IRF540
IRF542 National Semiconductor Corporation Check for Price POWER, FET IRF542 vs IRF542
IRF542 New Jersey Semiconductor Products Inc Check for Price Trans MOSFET N-CH 100V 28A 3-Pin(3+Tab) TO-220AB IRF542 vs IRF542
IRF542 Intersil Corporation Check for Price 25A, 100V, 0.1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB IRF542 vs IRF542
IRF540 Harris Semiconductor Check for Price Power Field-Effect Transistor, 28A I(D), 100V, 0.077ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB IRF542 vs IRF540
Part Number Manufacturer Composite Price Description Compare
IRF540-010 International Rectifier Check for Price Power Field-Effect Transistor, 28A I(D), 100V, 0.077ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB IRF542 vs IRF540-010
BUK455-100A NXP Semiconductors Check for Price TRANSISTOR 26 A, 100 V, 0.08 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, PLASTIC, TO-220AB, 3 PIN, FET General Purpose Power IRF542 vs BUK455-100A
STW70N10F4 STMicroelectronics Check for Price N-channel 100 V, 0.015 Ohm, 60 A, STripFET(TM) DeepGATE(TM) Power MOSFET in TO-247 IRF542 vs STW70N10F4
IRF540 Vishay Intertechnologies Check for Price Power Field-Effect Transistor, 28A I(D), 100V, 0.077ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN IRF542 vs IRF540
934055542127 NXP Semiconductors Check for Price TRANSISTOR 23 A, 100 V, 0.077 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, FET General Purpose Power IRF542 vs 934055542127
RFP22N10 Intersil Corporation Check for Price 22A, 100V, 0.08ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB IRF542 vs RFP22N10
IRF540PBF Vishay Siliconix Check for Price Power Field-Effect Transistor, 28A I(D), 100V, 0.077ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, TO-220, 3 PIN IRF542 vs IRF540PBF
STB30N10 STMicroelectronics Check for Price 30A, 100V, 0.07ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, TO-263, D2PAK-3 IRF542 vs STB30N10
IRF543 International Rectifier Check for Price Power Field-Effect Transistor, 25A I(D), 80V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB IRF542 vs IRF543
IRF543-009 International Rectifier Check for Price Power Field-Effect Transistor, 25A I(D), 80V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET IRF542 vs IRF543-009

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