Part Details for IRF540S by Vishay Siliconix
Results Overview of IRF540S by Vishay Siliconix
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (5 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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IRF540S Information
IRF540S by Vishay Siliconix is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part Details for IRF540S
IRF540S CAD Models
IRF540S Part Data Attributes
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IRF540S
Vishay Siliconix
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Datasheet
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IRF540S
Vishay Siliconix
Power Field-Effect Transistor, 28A I(D), 100V, 0.077ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, D2PAK-3
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| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | VISHAY SILICONIX | |
| Part Package Code | D2PAK | |
| Package Description | TO-263, D2PAK-3 | |
| Pin Count | 4 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Additional Feature | AVALANCHE RATED | |
| Avalanche Energy Rating (Eas) | 230 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 28 A | |
| Drain-source On Resistance-Max | 0.077 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-263AB | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e0 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 110 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | TIN LEAD | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IRF540S
This table gives cross-reference parts and alternative options found for IRF540S. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF540S, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
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| IRF540STRLPBF | Vishay Intertechnologies | $1.5910 | Power Field-Effect Transistor, 28A I(D), 100V, 0.077ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, SMD-220, 3 PIN | IRF540S vs IRF540STRLPBF |
| IRF540STRRPBF | Vishay Intertechnologies | $1.8970 | Power Field-Effect Transistor, 28A I(D), 100V, 0.077ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, SMD-220, 3 PIN | IRF540S vs IRF540STRRPBF |
| IRF540S | International Rectifier | Check for Price | Power Field-Effect Transistor, 28A I(D), 100V, 0.077ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN | IRF540S vs IRF540S |
| IRF540STRRPBF | Vishay Siliconix | Check for Price | Power Field-Effect Transistor, 28A I(D), 100V, 0.077ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, TO-263, D2PAK-3 | IRF540S vs IRF540STRRPBF |
| IRF540STRLPBF | Vishay Siliconix | Check for Price | Power Field-Effect Transistor, 28A I(D), 100V, 0.077ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, TO-263, D2PAK-3 | IRF540S vs IRF540STRLPBF |
IRF540S Frequently Asked Questions (FAQ)
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The maximum safe operating area (SOA) for the IRF540S is not explicitly stated in the datasheet, but it can be estimated based on the device's thermal and electrical characteristics. A general rule of thumb is to limit the device's operation to a maximum junction temperature of 150°C and a maximum drain-source voltage of 50V.
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To ensure the IRF540S is fully turned on, the gate-source voltage (Vgs) should be at least 10V, and the gate drive current should be sufficient to charge the gate capacitance quickly. A gate resistor of 10-20 ohms is recommended to prevent ringing and ensure stable operation.
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The maximum current rating for the IRF540S is 28A, but this is only valid for a short duration (typically 10ms). For continuous operation, the maximum current rating is typically derated to around 10-15A, depending on the application and thermal management.
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To protect the IRF540S from overvoltage and overcurrent, a combination of voltage clamping devices (such as zener diodes or TVS diodes) and current sensing resistors can be used. Additionally, a fuse or a current limiter can be used to prevent excessive current flow.
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The thermal resistance of the IRF540S is typically around 1.5°C/W for the junction-to-case thermal resistance (RθJC) and 62°C/W for the junction-to-ambient thermal resistance (RθJA). However, these values can vary depending on the specific application and thermal management.