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Power Field-Effect Transistor, 28A I(D), 100V, 0.077ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT PACKAGE-3
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
IRF540PBF by Vishay Intertechnologies is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
63J7322
|
Newark | N Channel Mosfet, 100V, 28A, To-220Ab, Channel Type:N Channel, Drain Source Voltage Vds:100V, Continuous Drain Current Id:28A, Transistor Mounting:Through Hole, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:4V, Msl:- Rohs Compliant: Yes |Vishay IRF540PBF RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk | 5955 |
|
$1.1300 / $1.6800 | Buy Now |
DISTI #
IRF540PBF
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Avnet Americas | MOSFET N-CHANNEL 100V - Rail/Tube (Alt: IRF540PBF) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 30 Weeks, 0 Days Container: Tube | 3511 |
|
$1.0576 / $1.1238 | Buy Now |
DISTI #
63J7322
|
Avnet Americas | MOSFET N-CHANNEL 100V - Bulk (Alt: 63J7322) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 17 Weeks, 4 Days Container: Bulk | 5955 Partner Stock |
|
$1.3300 / $1.6800 | Buy Now |
DISTI #
844-IRF540PBF
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Mouser Electronics | MOSFETs TO220 100V 28A N-CH MOSFET RoHS: Compliant | 6724 |
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$0.9800 / $1.8200 | Buy Now |
DISTI #
V36:1790_07434268
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Arrow Electronics | Trans MOSFET N-CH 100V 28A 3-Pin(3+Tab) TO-220AB Min Qty: 1 Package Multiple: 1 Lead time: 30 Weeks Date Code: 2425 | Americas - 24440 |
|
$0.8050 / $1.0224 | Buy Now |
DISTI #
70078851
|
RS | MOSFET, Power, N-Ch, VDSS 100V, RDS(ON) 0.077Ohm, ID 28A, TO-220AB, PD 150W, VGS +/-20V Min Qty: 1 Package Multiple: 1 Lead time: 3 Weeks, 0 Days Container: Bulk | 1178 |
|
$1.0700 | Buy Now |
|
Future Electronics | Single N-Channel 100 V 0.077 Ohms Flange Mount Power Mosfet - TO-220-3 RoHS: Compliant pbFree: Yes Min Qty: 1 Package Multiple: 1 Lead time: 30 Weeks Container: Tube | 15364Tube |
|
$0.6750 / $0.7700 | Buy Now |
DISTI #
87720947
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Verical | Trans MOSFET N-CH 100V 28A 3-Pin(3+Tab) TO-220AB Min Qty: 10 Package Multiple: 1 Date Code: 2425 | Americas - 24440 |
|
$0.8050 / $1.0224 | Buy Now |
DISTI #
87989632
|
Verical | Trans MOSFET N-CH 100V 28A 3-Pin(3+Tab) TO-220AB Min Qty: 50 Package Multiple: 50 Date Code: 2447 | Americas - 9300 |
|
$0.9604 / $1.3395 | Buy Now |
DISTI #
88156211
|
Verical | Trans MOSFET N-CH 100V 28A 3-Pin(3+Tab) TO-220AB Min Qty: 12 Package Multiple: 1 Date Code: 2511 | Americas - 3800 |
|
$0.8617 | Buy Now |
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IRF540PBF
Vishay Intertechnologies
Buy Now
Datasheet
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Compare Parts:
IRF540PBF
Vishay Intertechnologies
Power Field-Effect Transistor, 28A I(D), 100V, 0.077ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT PACKAGE-3
|
Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
Part Package Code | TO-220AB | |
Pin Count | 3 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 30 Weeks | |
Samacsys Manufacturer | Vishay | |
Additional Feature | AVALANCHE RATED | |
Avalanche Energy Rating (Eas) | 230 mJ | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 100 V | |
Drain Current-Max (ID) | 28 A | |
Drain-source On Resistance-Max | 0.077 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 120 pF | |
JEDEC-95 Code | TO-220AB | |
JESD-30 Code | R-PSFM-T3 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 150 W | |
Pulsed Drain Current-Max (IDM) | 110 A | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Finish | MATTE TIN | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for IRF540PBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF540PBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Manufacturer | Composite Price | Description | Compare |
---|---|---|---|---|
IRF542 | TT Electronics Power and Hybrid / Semelab Limited | Check for Price | 25A, 100V, 0.1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN | IRF540PBF vs IRF542 |
IRF540 | Rochester Electronics LLC | Check for Price | 28A, 100V, 0.077ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | IRF540PBF vs IRF540 |
IRF542 | International Rectifier | Check for Price | Power Field-Effect Transistor, 25A I(D), 100V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | IRF540PBF vs IRF542 |
IRF540 | STMicroelectronics | Check for Price | 22A, 100V, 0.077ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220, 3 PIN | IRF540PBF vs IRF540 |
IRF540 | Microsemi Corporation | Check for Price | Power Field-Effect Transistor, 28A I(D), 100V, 0.077ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC PACKAGE-3 | IRF540PBF vs IRF540 |
IRF542 | National Semiconductor Corporation | Check for Price | POWER, FET | IRF540PBF vs IRF542 |
IRF542 | New Jersey Semiconductor Products Inc | Check for Price | Trans MOSFET N-CH 100V 28A 3-Pin(3+Tab) TO-220AB | IRF540PBF vs IRF542 |
IRF542 | Intersil Corporation | Check for Price | 25A, 100V, 0.1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | IRF540PBF vs IRF542 |
IRF540 | Harris Semiconductor | Check for Price | Power Field-Effect Transistor, 28A I(D), 100V, 0.077ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | IRF540PBF vs IRF540 |
The maximum operating temperature range for the IRF540PBF is -55°C to 175°C.
Yes, the IRF540PBF is suitable for high-frequency switching applications up to 1 MHz, but it's essential to consider the device's switching losses and thermal management.
To ensure proper cooling, provide a heat sink with a thermal resistance of 1°C/W or less, and ensure good thermal contact between the device and the heat sink. Also, consider the PCB layout and airflow around the device.
The recommended gate drive voltage for the IRF540PBF is between 10V and 15V, with a maximum gate-source voltage of ±20V.
No, the IRF540PBF is not suitable for linear amplifier applications due to its high power MOSFET characteristics. It's designed for switching applications only.