Part Details for IRF540PBF by International Rectifier
Results Overview of IRF540PBF by International Rectifier
- Distributor Offerings: (3 listings)
- Number of FFF Equivalents: (9 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
IRF540PBF Information
IRF540PBF by International Rectifier is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IRF540PBF
| Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | 646 |
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RFQ | ||
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Bristol Electronics | 420 |
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RFQ | ||
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Bristol Electronics | 25 |
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RFQ |
Part Details for IRF540PBF
IRF540PBF CAD Models
IRF540PBF Part Data Attributes
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IRF540PBF
International Rectifier
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Datasheet
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IRF540PBF
International Rectifier
Power Field-Effect Transistor, 28A I(D), 100V, 0.077ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | INTERNATIONAL RECTIFIER CORP | |
| Part Package Code | TO-220AB | |
| Package Description | LEAD FREE PACKAGE-3 | |
| Pin Count | 3 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Avalanche Energy Rating (Eas) | 230 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 28 A | |
| Drain-source On Resistance-Max | 0.077 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | 250 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 150 W | |
| Pulsed Drain Current-Max (IDM) | 110 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | Matte Tin (Sn) - with Nickel (Ni) barrier | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IRF540PBF
This table gives cross-reference parts and alternative options found for IRF540PBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF540PBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| IRF540PBF | Vishay Siliconix | Check for Price | Power Field-Effect Transistor, 28A I(D), 100V, 0.077ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, TO-220, 3 PIN | IRF540PBF vs IRF540PBF |
| IRF542 | TT Electronics Resistors | Check for Price | Power Field-Effect Transistor, 25A I(D), 100V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | IRF540PBF vs IRF542 |
| IRF540-010 | International Rectifier | Check for Price | Power Field-Effect Transistor, 28A I(D), 100V, 0.077ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | IRF540PBF vs IRF540-010 |
| IRF542 | TT Electronics Power and Hybrid / Semelab Limited | Check for Price | 25A, 100V, 0.1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN | IRF540PBF vs IRF542 |
| IRF540 | STMicroelectronics | Check for Price | 22A, 100V, 0.077ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220, 3 PIN | IRF540PBF vs IRF540 |
| IRF542 | Thomson Consumer Electronics | Check for Price | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | IRF540PBF vs IRF542 |
| IRF542 | Harris Semiconductor | Check for Price | Power Field-Effect Transistor, 25A I(D), 100V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | IRF540PBF vs IRF542 |
| IRF540 | Microsemi Corporation | Check for Price | Power Field-Effect Transistor, 28A I(D), 100V, 0.077ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC PACKAGE-3 | IRF540PBF vs IRF540 |
| IRF542 | FCI Semiconductor | Check for Price | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | IRF540PBF vs IRF542 |
IRF540PBF Frequently Asked Questions (FAQ)
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The maximum safe operating area (SOA) for the IRF540PBF is not explicitly stated in the datasheet, but it can be estimated based on the device's voltage and current ratings. As a general rule, it's recommended to operate the device within the boundaries of the SOA curve provided in the datasheet to ensure reliable operation.
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The junction-to-case thermal resistance (RθJC) for the IRF540PBF is not directly provided in the datasheet. However, you can estimate it using the thermal resistance values provided in the datasheet. RθJC can be calculated as RθJC = RθJA - RθCS, where RθJA is the junction-to-ambient thermal resistance and RθCS is the case-to-sink thermal resistance.
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The recommended gate drive voltage for the IRF540PBF is not explicitly stated in the datasheet. However, as a general rule, it's recommended to use a gate drive voltage between 10V to 15V to ensure reliable switching and minimize power losses.
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The IRF540PBF is a power MOSFET designed for low-frequency switching applications. While it can be used in high-frequency switching applications, it may not be the most suitable choice due to its relatively high gate capacitance and switching losses. It's recommended to consult the datasheet and application notes for guidance on high-frequency operation.
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The body diode of the IRF540PBF is an inherent part of the power MOSFET structure. In most cases, the body diode can be ignored in circuit design. However, in certain applications, such as synchronous rectification or high-frequency switching, the body diode may need to be considered. It's recommended to consult the datasheet and application notes for guidance on handling the body diode.