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Part Details for IRF540NSTRRPBF by Infineon Technologies AG
Results Overview of IRF540NSTRRPBF by Infineon Technologies AG
- Distributor Offerings: (4 listings)
- Number of FFF Equivalents: (2 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (5 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
IRF540NSTRRPBF Information
IRF540NSTRRPBF by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IRF540NSTRRPBF
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
19K8212
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Newark | N Channel Mosfet, 100V, 6.5A D2-Pak, Channel Type:N Channel, Drain Source Voltage Vds:100V, Continuous Drain Current Id:33A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:4V Rohs Compliant: Yes |Infineon IRF540NSTRRPBF RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 237 |
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$0.5460 | Buy Now |
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DISTI #
70017460
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RS | MOSFET, Power, N-Ch, VDSS 100V, RDS(ON) 44 Milliohms, ID 33A, D2Pak, PD 130W, VGS+/-20V Min Qty: 10 Package Multiple: 1 Container: Bulk | 0 |
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$0.9000 / $1.0400 | RFQ |
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DISTI #
SP001571284
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EBV Elektronik | Trans MOSFET NCH 100V 33A 3Pin2Tab D2PAK TR (Alt: SP001571284) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Lead time: 143 Weeks, 0 Days | EBV - 0 |
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Buy Now | |
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Win Source Electronics | MOSFET N-CH 100V 33A D2PAK | 18890 |
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$0.2500 / $0.3229 | Buy Now |
Part Details for IRF540NSTRRPBF
IRF540NSTRRPBF CAD Models
IRF540NSTRRPBF Part Data Attributes
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IRF540NSTRRPBF
Infineon Technologies AG
Buy Now
Datasheet
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IRF540NSTRRPBF
Infineon Technologies AG
Power Field-Effect Transistor, 33A I(D), 100V, 0.044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 111 Weeks | |
| Date Of Intro | 1996-04-01 | |
| Samacsys Manufacturer | Infineon | |
| Additional Feature | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | |
| Avalanche Energy Rating (Eas) | 185 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 33 A | |
| Drain-source On Resistance-Max | 0.044 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 130 W | |
| Pulsed Drain Current-Max (IDM) | 110 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) - with Nickel (Ni) barrier | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IRF540NSTRRPBF
This table gives cross-reference parts and alternative options found for IRF540NSTRRPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF540NSTRRPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| IRF540NSTRRPBF | International Rectifier | Check for Price | Power Field-Effect Transistor, 33A I(D), 100V, 0.044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3 | IRF540NSTRRPBF vs IRF540NSTRRPBF |
| IRF540NSTRLPBF | International Rectifier | Check for Price | Power Field-Effect Transistor, 33A I(D), 100V, 0.044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3 | IRF540NSTRRPBF vs IRF540NSTRLPBF |
IRF540NSTRRPBF Frequently Asked Questions (FAQ)
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The maximum operating temperature range for the IRF540N is -55°C to 175°C.
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Yes, the IRF540N is suitable for high-frequency switching applications due to its low gate charge and fast switching times.
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The maximum drain-source voltage rating for the IRF540N is 100V.
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Yes, the IRF540N is qualified for automotive applications and meets the requirements of the AEC-Q101 standard.
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The typical gate threshold voltage for the IRF540N is 2-4V.