Part Details for IRF540NSTRRHR by International Rectifier
Results Overview of IRF540NSTRRHR by International Rectifier
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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IRF540NSTRRHR Information
IRF540NSTRRHR by International Rectifier is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IRF540NSTRRHR
| Part # | Distributor | Description | Stock | Price | Buy | |
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Vyrian | Transistors | 1002 |
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RFQ |
Part Details for IRF540NSTRRHR
IRF540NSTRRHR CAD Models
IRF540NSTRRHR Part Data Attributes
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IRF540NSTRRHR
International Rectifier
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Datasheet
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IRF540NSTRRHR
International Rectifier
Power Field-Effect Transistor, 33A I(D), 100V, 0.044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, D2PAK-3/2
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| Pbfree Code | No | |
| Rohs Code | No | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | INTERNATIONAL RECTIFIER CORP | |
| Part Package Code | D2PAK | |
| Package Description | SMALL OUTLINE, R-PSSO-G2 | |
| Pin Count | 3 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Additional Feature | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | |
| Avalanche Energy Rating (Eas) | 185 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 33 A | |
| Drain-source On Resistance-Max | 0.044 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e0 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 110 A | |
| Surface Mount | YES | |
| Terminal Finish | TIN LEAD | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
IRF540NSTRRHR Frequently Asked Questions (FAQ)
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The maximum safe operating area (SOA) for the IRF540NSTRRHR is not explicitly stated in the datasheet, but it can be estimated based on the device's thermal characteristics and voltage ratings. As a general rule, it's recommended to operate the device within the boundaries of the SOA curve provided in the datasheet to ensure reliable operation.
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The junction-to-case thermal resistance (RθJC) for the IRF540NSTRRHR is not directly provided in the datasheet. However, you can estimate it using the thermal resistance values provided in the datasheet. For example, the thermal resistance from junction to ambient (RθJA) is given as 62°C/W. You can use the following formula to estimate RθJC: RθJC = RθJA - RθCS, where RθCS is the thermal resistance from case to sink (usually around 0.5°C/W to 1°C/W).
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The recommended gate drive voltage for the IRF540NSTRRHR is not explicitly stated in the datasheet, but it's generally recommended to use a gate drive voltage between 10V to 15V to ensure reliable switching and minimize power losses. However, the optimal gate drive voltage may vary depending on the specific application and operating conditions.
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The IRF540NSTRRHR is a general-purpose MOSFET, and its high-frequency performance is not optimized. While it can be used in high-frequency switching applications, it may not be the best choice due to its relatively high gate capacitance and switching losses. For high-frequency applications, it's recommended to use a MOSFET specifically designed for high-frequency switching, such as those with optimized gate capacitance and switching characteristics.
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The IRF540NSTRRHR has an integrated body diode, which can conduct current in the reverse direction when the MOSFET is turned off. To handle the body diode, you should ensure that your circuit design takes into account the diode's voltage drop and current rating. You may need to add external diodes or snubber circuits to prevent voltage spikes and ensure reliable operation.