Part Details for IRF540NSTRRHR by Infineon Technologies AG
Results Overview of IRF540NSTRRHR by Infineon Technologies AG
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IRF540NSTRRHR Information
IRF540NSTRRHR by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part Details for IRF540NSTRRHR
IRF540NSTRRHR CAD Models
IRF540NSTRRHR Part Data Attributes
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IRF540NSTRRHR
Infineon Technologies AG
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Datasheet
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IRF540NSTRRHR
Infineon Technologies AG
Power Field-Effect Transistor, 33A I(D), 100V, 0.044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, D2PAK-3/2
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| Rohs Code | No | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | SMALL OUTLINE, R-PSSO-G2 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Infineon | |
| Additional Feature | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | |
| Avalanche Energy Rating (Eas) | 185 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 33 A | |
| Drain-source On Resistance-Max | 0.044 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e0 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 110 A | |
| Surface Mount | YES | |
| Terminal Finish | TIN LEAD | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
IRF540NSTRRHR Frequently Asked Questions (FAQ)
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The maximum safe operating area (SOA) for the IRF540NSTRRHR is not explicitly stated in the datasheet, but it can be calculated using the device's thermal resistance, maximum junction temperature, and voltage and current ratings. It's recommended to consult with Infineon's application notes or contact their support team for guidance on SOA calculations.
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To ensure proper thermal management, it's essential to provide a heat sink with a sufficient thermal conductivity, ensure good thermal interface material (TIM) between the device and heat sink, and maintain a low thermal resistance between the device and ambient air. The datasheet provides thermal resistance values, and Infineon's application notes offer guidance on thermal design and management.
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The recommended gate drive voltage for the IRF540NSTRRHR is typically between 10V to 15V, depending on the specific application and required switching speed. However, it's essential to consult the datasheet and application notes for specific guidance on gate drive voltage and circuit design.
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The IRF540NSTRRHR is a power MOSFET designed for high-power applications, but it may not be suitable for very high-frequency switching (e.g., above 100 kHz) due to its relatively high gate capacitance and switching losses. It's recommended to consult Infineon's application notes and evaluate the device's performance in your specific application before selecting it for high-frequency switching.
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To protect the IRF540NSTRRHR from overvoltage and overcurrent conditions, it's recommended to use a suitable voltage regulator, overvoltage protection (OVP) circuit, and overcurrent protection (OCP) circuit. Additionally, ensure that the device is operated within its specified voltage and current ratings, and consider using a fuse or current-limiting resistor in series with the device.