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Power Field-Effect Transistor, 33A I(D), 100V, 0.044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
IRF540NSTRLPBF by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
40M7920
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Newark | N Channel Mosfet, 100V, 33A, D2-Pak, Channel Type:N Channel, Drain Source Voltage Vds:100V, Continuous Drain Current Id:33A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:4V Rohs Compliant: Yes |Infineon IRF540NSTRLPBF RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 4065 |
|
$0.5750 / $0.6270 | Buy Now |
DISTI #
IRF540NSTRLPBFCT-ND
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DigiKey | MOSFET N-CH 100V 33A D2PAK Min Qty: 1 Lead time: 14 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
2314 In Stock |
|
$0.5406 / $1.7900 | Buy Now |
DISTI #
IRF540NSTRLPBF
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Avnet Americas | Power MOSFET, N Channel, 100 V, 33 A, 44 mOhm, TO-263 (D2PAK), 3 Pins, Surface Mount - Tape and Reel (Alt: IRF540NSTRLPBF) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Lead time: 14 Weeks, 0 Days Container: Reel | 13600 |
|
$0.4170 / $0.4386 | Buy Now |
DISTI #
40M7920
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Avnet Americas | Power MOSFET, N Channel, 100 V, 33 A, 44 mOhm, TO-263 (D2PAK), 3 Pins, Surface Mount - Product that comes on tape, but is not reeled (Alt: 40M7920) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 16 Weeks, 3 Days Container: Ammo Pack | 516 Partner Stock |
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$1.1000 / $1.9500 | Buy Now |
DISTI #
IRF540NSTRLPBF
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Avnet Americas | Power MOSFET, N Channel, 100 V, 33 A, 44 mOhm, TO-263 (D2PAK), 3 Pins, Surface Mount - Tape and Reel (Alt: IRF540NSTRLPBF) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Lead time: 10 Weeks, 0 Days Container: Reel | 0 |
|
$0.4145 / $0.4433 | Buy Now |
DISTI #
942-IRF540NSTRLPBF
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Mouser Electronics | MOSFETs MOSFT 100V 33A 44mOhm 47.3nC RoHS: Compliant | 11165 |
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$0.5400 / $1.7600 | Buy Now |
DISTI #
E02:0323_00176448
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Arrow Electronics | Trans MOSFET N-CH Si 100V 33A 3-Pin(2+Tab) D2PAK T/R Min Qty: 800 Package Multiple: 800 Lead time: 14 Weeks Date Code: 2512 | Europe - 50400 |
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$0.4130 / $0.4516 | Buy Now |
DISTI #
70017673
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RS | MOSFET, Power, N-Ch, VDSS 100V, RDS(ON) 44 Milliohms, ID 33A, D2Pak, PD 130W, VGS+/-20V Min Qty: 1 Package Multiple: 1 Container: Bulk | 662 |
|
$1.3300 / $1.7700 | Buy Now |
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Future Electronics | Single N-Channel 100V 44 mOhm 71 nC HEXFET® Power Mosfet - D2PAK RoHS: Compliant pbFree: Yes Min Qty: 800 Package Multiple: 800 Lead time: 14 Weeks Container: Reel | 25600Reel |
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$0.4400 / $0.4650 | Buy Now |
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Future Electronics | Single N-Channel 100V 44 mOhm 71 nC HEXFET® Power Mosfet - D2PAK RoHS: Compliant pbFree: Yes Min Qty: 800 Package Multiple: 800 Lead time: 14 Weeks Container: Reel | 0Reel |
|
$0.4400 / $0.4650 | Buy Now |
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IRF540NSTRLPBF
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IRF540NSTRLPBF
Infineon Technologies AG
Power Field-Effect Transistor, 33A I(D), 100V, 0.044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3
|
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 16 Weeks, 3 Days | |
Samacsys Manufacturer | Infineon | |
Additional Feature | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | |
Avalanche Energy Rating (Eas) | 185 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 100 V | |
Drain Current-Max (ID) | 33 A | |
Drain-source On Resistance-Max | 0.044 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-263 | |
JESD-30 Code | R-PSSO-G2 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 130 W | |
Pulsed Drain Current-Max (IDM) | 110 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | Matte Tin (Sn) - with Nickel (Ni) barrier | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for IRF540NSTRLPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF540NSTRLPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Manufacturer | Composite Price | Description | Compare |
---|---|---|---|---|
IRF540NSTRRPBF | Infineon Technologies AG | $0.6358 | Power Field-Effect Transistor, 33A I(D), 100V, 0.044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3 | IRF540NSTRLPBF vs IRF540NSTRRPBF |
The maximum operating temperature range for the IRF540NSTRLPBF is -55°C to 175°C.
To ensure reliability, ensure proper thermal management, use a suitable heat sink, and follow the recommended PCB layout and assembly guidelines.
The maximum allowable voltage for the IRF540NSTRLPBF is 100V.
Handle the device with ESD-protective equipment, use an ESD wrist strap, and follow proper handling and storage procedures.
Yes, the IRF540NSTRLPBF is suitable for high-frequency switching applications up to 1 MHz, but ensure proper PCB layout and component selection to minimize parasitic inductance and capacitance.