Part Details for IRF540NSTRLHR by International Rectifier
Results Overview of IRF540NSTRLHR by International Rectifier
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (3 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
IRF540NSTRLHR Information
IRF540NSTRLHR by International Rectifier is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IRF540NSTRLHR
| Part # | Distributor | Description | Stock | Price | Buy | |
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Vyrian | Transistors | 886 |
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RFQ |
Part Details for IRF540NSTRLHR
IRF540NSTRLHR CAD Models
IRF540NSTRLHR Part Data Attributes
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IRF540NSTRLHR
International Rectifier
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Datasheet
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IRF540NSTRLHR
International Rectifier
Power Field-Effect Transistor, 33A I(D), 100V, 0.044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, D2PAK-3/2
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| Pbfree Code | No | |
| Rohs Code | No | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | INTERNATIONAL RECTIFIER CORP | |
| Part Package Code | D2PAK | |
| Package Description | SMALL OUTLINE, R-PSSO-G2 | |
| Pin Count | 3 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Additional Feature | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | |
| Avalanche Energy Rating (Eas) | 185 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 33 A | |
| Drain-source On Resistance-Max | 0.044 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e0 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 110 A | |
| Surface Mount | YES | |
| Terminal Finish | TIN LEAD | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IRF540NSTRLHR
This table gives cross-reference parts and alternative options found for IRF540NSTRLHR. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF540NSTRLHR, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| NTE2930 | NTE Electronics Inc | Check for Price | Power Field-Effect Transistor, 31A I(D), 100V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, | IRF540NSTRLHR vs NTE2930 |
| 934055808127 | NXP Semiconductors | Check for Price | TRANSISTOR 35 A, 100 V, 0.04 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, PLASTIC, SC-46, 3 PIN, FET General Purpose Power | IRF540NSTRLHR vs 934055808127 |
| 934055806118 | NXP Semiconductors | Check for Price | TRANSISTOR 35 A, 100 V, 0.04 ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, SMD, D2PAK-3, FET General Purpose Power | IRF540NSTRLHR vs 934055806118 |
IRF540NSTRLHR Frequently Asked Questions (FAQ)
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The maximum operating temperature range for the IRF540NSTRLHR is -55°C to 175°C, as specified in the datasheet. However, it's recommended to derate the power dissipation above 150°C to ensure reliable operation.
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To calculate the power dissipation of the IRF540NSTRLHR, you need to consider the voltage drop across the device (Vds) and the current flowing through it (Ids). The power dissipation (Pd) can be calculated using the formula: Pd = Vds x Ids. Additionally, you should also consider the thermal resistance (Rth) of the device and the ambient temperature (Ta) to ensure the device operates within its thermal limits.
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The recommended gate drive voltage for the IRF540NSTRLHR is typically between 10V to 15V, depending on the specific application and switching frequency. A higher gate drive voltage can improve the switching speed and reduce the turn-on resistance, but it may also increase the power consumption and electromagnetic interference (EMI).
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Yes, the IRF540NSTRLHR is suitable for high-frequency switching applications up to several hundred kHz. However, you need to consider the device's switching characteristics, such as the rise and fall times, and ensure that the gate drive circuitry is capable of providing a fast and clean signal. Additionally, you should also consider the device's thermal performance and ensure that it can handle the increased power dissipation at high frequencies.
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To protect the IRF540NSTRLHR from overvoltage and overcurrent, you can use a combination of voltage clamping devices, such as zener diodes or transient voltage suppressors (TVS), and current sensing resistors or fuses. Additionally, you should also consider implementing overcurrent protection (OCP) and overvoltage protection (OVP) circuits to detect and respond to fault conditions.