Part Details for IRF540NSHR by International Rectifier
Results Overview of IRF540NSHR by International Rectifier
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (3 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
IRF540NSHR Information
IRF540NSHR by International Rectifier is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IRF540NSHR
| Part # | Distributor | Description | Stock | Price | Buy | |
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ComSIT USA | HEXFET POWER MOSFET Power Field-Effect Transistor, 33A I(D), 100V, 0.044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET ECCN: EAR99 RoHS: Not Compliant |
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RFQ | |
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Vyrian | Transistors | 1231 |
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RFQ |
Part Details for IRF540NSHR
IRF540NSHR CAD Models
IRF540NSHR Part Data Attributes
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IRF540NSHR
International Rectifier
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Datasheet
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IRF540NSHR
International Rectifier
Power Field-Effect Transistor, 33A I(D), 100V, 0.044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, D2PAK-3/2
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| Pbfree Code | No | |
| Rohs Code | No | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | INTERNATIONAL RECTIFIER CORP | |
| Part Package Code | D2PAK | |
| Package Description | PLASTIC, D2PAK-3/2 | |
| Pin Count | 3 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Additional Feature | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | |
| Avalanche Energy Rating (Eas) | 185 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 33 A | |
| Drain-source On Resistance-Max | 0.044 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e0 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 110 A | |
| Surface Mount | YES | |
| Terminal Finish | TIN LEAD | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IRF540NSHR
This table gives cross-reference parts and alternative options found for IRF540NSHR. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF540NSHR, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
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| NTE2930 | NTE Electronics Inc | Check for Price | Power Field-Effect Transistor, 31A I(D), 100V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, | IRF540NSHR vs NTE2930 |
| 934055808127 | NXP Semiconductors | Check for Price | TRANSISTOR 35 A, 100 V, 0.04 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, PLASTIC, SC-46, 3 PIN, FET General Purpose Power | IRF540NSHR vs 934055808127 |
| 934055806118 | NXP Semiconductors | Check for Price | TRANSISTOR 35 A, 100 V, 0.04 ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, SMD, D2PAK-3, FET General Purpose Power | IRF540NSHR vs 934055806118 |
IRF540NSHR Frequently Asked Questions (FAQ)
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The maximum safe operating temperature for the IRF540NSHR is 175°C, as specified in the datasheet. However, it's recommended to derate the device's power handling capabilities as the temperature increases to ensure reliable operation.
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To calculate the power dissipation of the IRF540NSHR, you need to know the drain-to-source voltage (Vds), drain current (Id), and the Rds(on) of the device. The power dissipation can be calculated using the formula: Pd = Vds x Id x Rds(on). You can find the Rds(on) value in the datasheet.
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The maximum voltage rating of the IRF540NSHR's gate-source voltage is ±20V. Exceeding this voltage can damage the device.
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Yes, the IRF540NSHR is suitable for high-frequency switching applications due to its low gate charge and fast switching times. However, you need to ensure that the device is properly driven and that the layout is optimized to minimize parasitic inductances and capacitances.
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To protect the IRF540NSHR from ESD, you should handle the device with anti-static precautions, such as using an anti-static wrist strap or mat. You should also ensure that the device is properly packaged and stored in an ESD-safe environment.