Part Details for IRF540NPBF by International Rectifier
Results Overview of IRF540NPBF by International Rectifier
- Distributor Offerings: (8 listings)
- Number of FFF Equivalents: (8 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
IRF540NPBF Information
IRF540NPBF by International Rectifier is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IRF540NPBF
| Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | 853 |
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Bristol Electronics | 50 |
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Quest Components | TRANSISTOR,MOSFET,N-CHANNEL,100V V(BR)DSS,33A I(D),TO-220AB | 226 |
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$0.8533 / $1.7065 | Buy Now |
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Quest Components | TRANSISTOR,MOSFET,N-CHANNEL,100V V(BR)DSS,33A I(D),TO-220AB | 20 |
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$0.6143 / $1.0239 | Buy Now |
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Quest Components | TRANSISTOR,MOSFET,N-CHANNEL,100V V(BR)DSS,33A I(D),TO-220AB | 4 |
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$2.2050 / $2.9400 | Buy Now |
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ComSIT USA | HEXFET POWER MOSFET Power Field-Effect Transistor, 33A I(D), 100V, 0.044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB ECCN: EAR99 RoHS: Compliant |
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Chip 1 Exchange | INSTOCK | 222159 |
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Vyrian | Transistors | 79696 |
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Part Details for IRF540NPBF
IRF540NPBF CAD Models
IRF540NPBF Part Data Attributes
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IRF540NPBF
International Rectifier
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Datasheet
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IRF540NPBF
International Rectifier
Power Field-Effect Transistor, 33A I(D), 100V, 0.044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | INTERNATIONAL RECTIFIER CORP | |
| Part Package Code | TO-220AB | |
| Package Description | LEAD FREE PACKAGE-3 | |
| Pin Count | 3 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Additional Feature | HIGH RELIABILITY | |
| Avalanche Energy Rating (Eas) | 185 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 33 A | |
| Drain-source On Resistance-Max | 0.044 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | 250 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 130 W | |
| Pulsed Drain Current-Max (IDM) | 110 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | MATTE TIN OVER NICKEL | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IRF540NPBF
This table gives cross-reference parts and alternative options found for IRF540NPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF540NPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
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| 2SK2050 | Fuji Electric Co Ltd | Check for Price | Power Field-Effect Transistor, 30A I(D), 100V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | IRF540NPBF vs 2SK2050 |
| IRF512 | Harris Semiconductor | Check for Price | Power Field-Effect Transistor, 4.9A I(D), 100V, 0.74ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | IRF540NPBF vs IRF512 |
| IRF512-006 | International Rectifier | Check for Price | Power Field-Effect Transistor, 4.9A I(D), 100V, 0.74ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | IRF540NPBF vs IRF512-006 |
| IRF512 | Samsung Semiconductor | Check for Price | Power Field-Effect Transistor, 4.9A I(D), 100V, 0.74ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | IRF540NPBF vs IRF512 |
| IRF540N | Motorola Mobility LLC | Check for Price | 28A, 100V, 0.077ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | IRF540NPBF vs IRF540N |
| IRF540N | Fairchild Semiconductor Corporation | Check for Price | Power Field-Effect Transistor, 33A I(D), 100V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | IRF540NPBF vs IRF540N |
| IRF512-001 | International Rectifier | Check for Price | Power Field-Effect Transistor, 4.9A I(D), 100V, 0.74ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | IRF540NPBF vs IRF512-001 |
| IRF512 | Intersil Corporation | Check for Price | 4.9A, 100V, 0.74ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | IRF540NPBF vs IRF512 |
IRF540NPBF Frequently Asked Questions (FAQ)
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The maximum operating temperature of the IRF540NPBF is 175°C (347°F).
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Yes, the IRF540NPBF is suitable for high-frequency switching applications up to 1 MHz, but it's essential to consider the device's switching losses and thermal management.
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To ensure proper cooling, provide a heat sink with a thermal resistance of ≤ 10°C/W, and ensure good thermal contact between the device and the heat sink. Also, consider the PCB layout and airflow around the device.
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The maximum gate-source voltage (Vgs) that can be applied to the IRF540NPBF is ±20V. Exceeding this voltage may damage the device.
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No, the IRF540NPBF is not suitable for linear amplifier applications due to its high power MOSFET characteristics. It's designed for switching applications only.