Part Details for IRF540NLPBF by International Rectifier
Results Overview of IRF540NLPBF by International Rectifier
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (2 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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IRF540NLPBF Information
IRF540NLPBF by International Rectifier is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IRF540NLPBF
| Part # | Distributor | Description | Stock | Price | Buy | |
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Vyrian | Transistors | 1946 |
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RFQ |
Part Details for IRF540NLPBF
IRF540NLPBF CAD Models
IRF540NLPBF Part Data Attributes
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IRF540NLPBF
International Rectifier
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Datasheet
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IRF540NLPBF
International Rectifier
Power Field-Effect Transistor, 33A I(D), 100V, 0.044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, LEAD FREE, PLASTIC, TO-262, 3 PIN
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | INTERNATIONAL RECTIFIER CORP | |
| Part Package Code | TO-262AA | |
| Package Description | LEAD FREE, PLASTIC, TO-262, 3 PIN | |
| Pin Count | 3 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Additional Feature | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | |
| Avalanche Energy Rating (Eas) | 185 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 33 A | |
| Drain-source On Resistance-Max | 0.044 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-262AA | |
| JESD-30 Code | R-PSIP-T3 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | IN-LINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 130 W | |
| Pulsed Drain Current-Max (IDM) | 110 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | Matte Tin (Sn) - with Nickel (Ni) barrier | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IRF540NLPBF
This table gives cross-reference parts and alternative options found for IRF540NLPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF540NLPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| IRF540NL | International Rectifier | Check for Price | Power Field-Effect Transistor, 33A I(D), 100V, 0.044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, PLASTIC, TO-262, 3 PIN | IRF540NLPBF vs IRF540NL |
| IRF540NLPBF | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 33A I(D), 100V, 0.044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, LEAD FREE, PLASTIC, TO-262, 3 PIN | IRF540NLPBF vs IRF540NLPBF |
IRF540NLPBF Frequently Asked Questions (FAQ)
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The maximum safe operating area (SOA) for the IRF540NLPBF is not explicitly stated in the datasheet, but it can be estimated based on the device's voltage and current ratings. As a general rule, it's recommended to operate the device within 80% of its maximum voltage and current ratings to ensure safe operation.
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The junction-to-case thermal resistance (RθJC) for the IRF540NLPBF is not explicitly stated in the datasheet, but it can be calculated using the thermal resistance values provided in the datasheet. RθJC can be estimated as RθJC = RθJA - RθCS, where RθJA is the junction-to-ambient thermal resistance and RθCS is the case-to-sink thermal resistance.
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The recommended gate drive voltage for the IRF540NLPBF is typically between 10V to 15V, depending on the specific application and switching frequency. A higher gate drive voltage can improve the device's switching performance, but it also increases the power consumption and EMI emissions.
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Yes, the IRF540NLPBF can be used in high-frequency switching applications, but it's essential to consider the device's switching characteristics, such as the rise and fall times, and the gate charge. The device's datasheet provides information on its high-frequency performance, and it's recommended to consult with the manufacturer's application notes for specific guidance.
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To ensure proper cooling of the IRF540NLPBF, it's essential to provide a sufficient heat sink and thermal interface material (TIM) between the device and the heat sink. The heat sink should be designed to dissipate the maximum power dissipation of the device, and the TIM should have a low thermal resistance. Additionally, the device's thermal pad should be connected to a low-impedance thermal path to ensure efficient heat transfer.