Part Details for IRF540N by Intersil Corporation
Results Overview of IRF540N by Intersil Corporation
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (7 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
IRF540N Information
IRF540N by Intersil Corporation is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IRF540N
| Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | 10 |
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RFQ | ||
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Quest Components | TRANSISTOR,MOSFET,N-CHANNEL,100V V(BR)DSS,27A I(D),TO-220AB | 8 |
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$1.8600 / $2.4800 | Buy Now |
Part Details for IRF540N
IRF540N CAD Models
IRF540N Part Data Attributes
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IRF540N
Intersil Corporation
Buy Now
Datasheet
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Compare Parts:
IRF540N
Intersil Corporation
33A, 100V, 0.04ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
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| Rohs Code | No | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | INTERSIL CORP | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 33 A | |
| Drain-source On Resistance-Max | 0.04 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e0 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 120 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | Tin/Lead (Sn/Pb) | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IRF540N
This table gives cross-reference parts and alternative options found for IRF540N. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF540N, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
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| IRF510-009 | International Rectifier | Check for Price | Power Field-Effect Transistor, 5.6A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | IRF540N vs IRF510-009 |
| IRF512 | Fairchild Semiconductor Corporation | Check for Price | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, | IRF540N vs IRF512 |
| RFP2N10 | Rochester Electronics LLC | Check for Price | 2A, 100V, 1.05ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | IRF540N vs RFP2N10 |
| IRF510PBF | International Rectifier | Check for Price | Power Field-Effect Transistor, 5.6A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3 | IRF540N vs IRF510PBF |
| IRF510 | onsemi | Check for Price | IRF510 | IRF540N vs IRF510 |
| IRF510 | Intersil Corporation | Check for Price | 5.6A, 100V, 0.54ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | IRF540N vs IRF510 |
| IRF512 | International Rectifier | Check for Price | Power Field-Effect Transistor, 4.9A I(D), 100V, 0.74ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | IRF540N vs IRF512 |
IRF540N Frequently Asked Questions (FAQ)
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The maximum safe operating area (SOA) for the IRF540N is not explicitly stated in the datasheet, but it can be estimated based on the device's thermal characteristics and voltage ratings. As a general rule, it's recommended to operate the device within the boundaries of the SOA curve provided in the datasheet to ensure reliable operation.
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To calculate the junction temperature (Tj) of the IRF540N, you can use the following formula: Tj = Tc + (RθJA * Pd), where Tc is the case temperature, RθJA is the thermal resistance from junction to ambient, and Pd is the power dissipation. The thermal resistance values can be found in the datasheet.
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The recommended gate drive voltage for the IRF540N is typically between 10V to 15V, depending on the specific application and switching frequency. A higher gate drive voltage can improve switching performance, but may also increase power consumption and EMI.
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Yes, the IRF540N can be used in high-frequency switching applications, but it's essential to consider the device's switching characteristics, such as the rise and fall times, and ensure that the gate drive circuitry is capable of providing a clean and fast switching signal. Additionally, the layout and PCB design should be optimized to minimize parasitic inductances and capacitances.
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To protect the IRF540N from overvoltage and overcurrent conditions, you can use a combination of voltage clamping devices, such as zener diodes or TVS diodes, and current sensing resistors or fuses. Additionally, consider implementing overvoltage and overcurrent protection circuits, such as a crowbar circuit or an overcurrent detection circuit, to prevent damage to the device.