Part Details for IRF540N by International Rectifier
Results Overview of IRF540N by International Rectifier
- Distributor Offerings: (9 listings)
- Number of FFF Equivalents: (6 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
IRF540N Information
IRF540N by International Rectifier is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IRF540N
| Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | 457 |
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Bristol Electronics | 36 |
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Bristol Electronics | 30 |
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Quest Components | TRANSISTOR,MOSFET,N-CHANNEL,100V V(BR)DSS,27A I(D),TO-220AB | 111 |
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$1.2900 / $2.5800 | Buy Now |
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Quest Components | TRANSISTOR,MOSFET,N-CHANNEL,100V V(BR)DSS,27A I(D),TO-220AB | 36 |
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$1.8375 / $2.9400 | Buy Now |
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Quest Components | TRANSISTOR,MOSFET,N-CHANNEL,100V V(BR)DSS,27A I(D),TO-220AB | 24 |
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$1.1700 / $1.9500 | Buy Now |
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Quest Components | TRANSISTOR,MOSFET,N-CHANNEL,100V V(BR)DSS,27A I(D),TO-220AB | 24 |
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$2.5000 / $4.0000 | Buy Now |
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ComSIT USA | HEXFET POWER MOSFET Power Field-Effect Transistor, 33A I(D), 100V, 0.044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB ECCN: EAR99 RoHS: Not Compliant |
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Chip 1 Exchange | INSTOCK | 101 |
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Part Details for IRF540N
IRF540N CAD Models
IRF540N Part Data Attributes
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IRF540N
International Rectifier
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Datasheet
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IRF540N
International Rectifier
Power Field-Effect Transistor, 33A I(D), 100V, 0.044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN
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| Pbfree Code | No | |
| Rohs Code | No | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | INTERNATIONAL RECTIFIER CORP | |
| Part Package Code | TO-220AB | |
| Package Description | TO-220AB, 3 PIN | |
| Pin Count | 3 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Additional Feature | AVALANCHE RATED, HIGH RELIABILITY | |
| Avalanche Energy Rating (Eas) | 185 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 33 A | |
| Drain-source On Resistance-Max | 0.044 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e0 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | 225 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation Ambient-Max | 94 W | |
| Power Dissipation-Max (Abs) | 94 W | |
| Pulsed Drain Current-Max (IDM) | 110 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | TIN LEAD | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IRF540N
This table gives cross-reference parts and alternative options found for IRF540N. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF540N, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
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| IRF512 | Motorola Semiconductor Products | Check for Price | Power Field-Effect Transistor, 3.5A I(D), 100V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | IRF540N vs IRF512 |
| IRF512 | Motorola Mobility LLC | Check for Price | 3.5A, 100V, 0.8ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | IRF540N vs IRF512 |
| 2SK2050 | Fuji Electric Co Ltd | Check for Price | Power Field-Effect Transistor, 30A I(D), 100V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | IRF540N vs 2SK2050 |
| IRF512-009 | International Rectifier | Check for Price | Power Field-Effect Transistor, 4.9A I(D), 100V, 0.74ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | IRF540N vs IRF512-009 |
| IRF540N | Motorola Mobility LLC | Check for Price | 28A, 100V, 0.077ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | IRF540N vs IRF540N |
| IRF540N | Fairchild Semiconductor Corporation | Check for Price | Power Field-Effect Transistor, 33A I(D), 100V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | IRF540N vs IRF540N |
IRF540N Frequently Asked Questions (FAQ)
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The maximum safe operating area (SOA) for the IRF540N is not explicitly stated in the datasheet, but it can be estimated based on the device's thermal characteristics and voltage ratings. As a general guideline, the SOA is typically limited by the device's maximum junction temperature (Tj) and voltage ratings. For the IRF540N, the maximum Tj is 175°C, and the maximum voltage rating is 100V. Therefore, the SOA would be limited to operating conditions that do not exceed these ratings.
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To ensure the IRF540N is fully turned on, the gate-source voltage (Vgs) should be at least 10V, and the gate current should be sufficient to charge the gate capacitance quickly. A gate resistor (Rg) of around 1-10 ohms can be used to slow down the gate voltage rise time and prevent oscillations. Additionally, the drain-source voltage (Vds) should be within the recommended operating range, and the device should be operated within its specified temperature range.
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The maximum current rating for the IRF540N is 33A, but this is dependent on the device's thermal characteristics and the operating conditions. The device's current rating is limited by its thermal resistance (Rthja) and the maximum junction temperature (Tj). To ensure reliable operation, the device should be operated within its specified current rating and thermal limits.
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To protect the IRF540N from overvoltage and overcurrent, a combination of voltage and current limiting techniques can be used. A voltage clamp or a zener diode can be used to limit the voltage across the device, while a current sense resistor and a fuse can be used to limit the current. Additionally, a thermal protection circuit can be used to detect overheating and shut down the device if necessary.
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The typical switching frequency for the IRF540N depends on the specific application and the device's operating conditions. However, as a general guideline, the IRF540N can be operated at switching frequencies up to 100 kHz or more, depending on the device's capacitance and the gate drive circuitry. Higher switching frequencies can be achieved with proper gate drive design and layout.