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Part Details for IRF540N by Infineon Technologies AG
Results Overview of IRF540N by Infineon Technologies AG
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (6 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
IRF540N Information
IRF540N by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IRF540N
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
637440
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Farnell | MOSFET, N TO-220 RoHS: Not Compliant Min Qty: 1 Lead time: 11 Weeks, 1 Days Container: Each | 0 |
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$1.1513 / $3.5343 | Buy Now |
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Win Source Electronics | MOSFET N-CH 100V 33A TO-220AB | 60000 |
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$0.1667 / $0.2153 | Buy Now |
Part Details for IRF540N
IRF540N CAD Models
IRF540N Part Data Attributes
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IRF540N
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IRF540N
Infineon Technologies AG
Power Field-Effect Transistor, 33A I(D), 100V, 0.044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN
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| Rohs Code | No | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | TO-220AB, 3 PIN | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Samacsys Manufacturer | Infineon | |
| Additional Feature | AVALANCHE RATED, HIGH RELIABILITY | |
| Avalanche Energy Rating (Eas) | 185 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 33 A | |
| Drain-source On Resistance-Max | 0.044 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e0 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | 225 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation Ambient-Max | 94 W | |
| Pulsed Drain Current-Max (IDM) | 110 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | Tin/Lead (Sn/Pb) | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IRF540N
This table gives cross-reference parts and alternative options found for IRF540N. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF540N, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| IRF512 | Motorola Semiconductor Products | Check for Price | Power Field-Effect Transistor, 3.5A I(D), 100V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | IRF540N vs IRF512 |
| IRF512 | Motorola Mobility LLC | Check for Price | 3.5A, 100V, 0.8ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | IRF540N vs IRF512 |
| 2SK2050 | Fuji Electric Co Ltd | Check for Price | Power Field-Effect Transistor, 30A I(D), 100V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | IRF540N vs 2SK2050 |
| IRF512-009 | International Rectifier | Check for Price | Power Field-Effect Transistor, 4.9A I(D), 100V, 0.74ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | IRF540N vs IRF512-009 |
| IRF540N | Motorola Mobility LLC | Check for Price | 28A, 100V, 0.077ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | IRF540N vs IRF540N |
| IRF540N | Fairchild Semiconductor Corporation | Check for Price | Power Field-Effect Transistor, 33A I(D), 100V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | IRF540N vs IRF540N |
IRF540N Frequently Asked Questions (FAQ)
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The maximum safe operating area (SOA) for the IRF540N is typically defined by the manufacturer as the region where the device can operate safely without damage. This information is usually provided in the datasheet or application notes. For the IRF540N, the SOA is typically limited by the maximum drain-source voltage (Vds) and drain current (Id).
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To ensure the IRF540N is fully turned on, the gate-source voltage (Vgs) should be at least 10V, and the gate drive should be able to provide sufficient current to charge the gate capacitance quickly. A gate resistor (Rg) of around 10-20 ohms is recommended to limit the gate current and prevent oscillations.
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The maximum junction temperature (Tj) for the IRF540N is 175°C. Operating the device above this temperature can reduce its lifespan and affect its performance.
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Yes, the IRF540N can be used in high-frequency switching applications, but it's essential to consider the device's switching characteristics, such as the rise and fall times, and ensure that the gate drive is capable of providing a fast switching signal. Additionally, the PCB layout and component selection should be optimized to minimize parasitic inductances and capacitances.
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To protect the IRF540N from overvoltage and overcurrent, it's recommended to use a voltage clamp or a transient voltage suppressor (TVS) to limit the voltage across the device. Additionally, a current sense resistor and a fuse or a current limiter can be used to detect and respond to overcurrent conditions.