Part Details for IRF540A by Fairchild Semiconductor Corporation
Results Overview of IRF540A by Fairchild Semiconductor Corporation
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (1 replacement)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (3 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
IRF540A Information
IRF540A by Fairchild Semiconductor Corporation is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IRF540A
Part # | Distributor | Description | Stock | Price | Buy | |
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Quest Components | TRANSISTOR,MOSFET,N-CHANNEL,100V V(BR)DSS,28A I(D),TO-220AB | 75 |
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$2.9260 / $4.3890 | Buy Now |
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ComSIT USA | Electronic Component RoHS: Compliant |
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RFQ |
Part Details for IRF540A
IRF540A CAD Models
IRF540A Part Data Attributes
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IRF540A
Fairchild Semiconductor Corporation
Buy Now
Datasheet
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IRF540A
Fairchild Semiconductor Corporation
Power Field-Effect Transistor, 28A I(D), 100V, 0.052ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
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Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | FAIRCHILD SEMICONDUCTOR CORP | |
Part Package Code | TO-220AB | |
Package Description | TO-220, 3 PIN | |
Pin Count | 3 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Avalanche Energy Rating (Eas) | 523 mJ | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 100 V | |
Drain Current-Max (ID) | 28 A | |
Drain-source On Resistance-Max | 0.052 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-220AB | |
JESD-30 Code | R-PSFM-T3 | |
JESD-609 Code | e3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 107 W | |
Pulsed Drain Current-Max (IDM) | 110 A | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Finish | MATTE TIN | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for IRF540A
This table gives cross-reference parts and alternative options found for IRF540A. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF540A, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Manufacturer | Composite Price | Description | Compare |
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IRF540A | Rochester Electronics LLC | Check for Price | 28A, 100V, 0.052ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220, 3 PIN | IRF540A vs IRF540A |
IRF540A Frequently Asked Questions (FAQ)
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The maximum safe operating area (SOA) for the IRF540A is not explicitly stated in the datasheet. However, Fairchild Semiconductor recommends following the SOA curves provided in the application notes to ensure safe operation.
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The junction-to-case thermal resistance (RθJC) for the IRF540A can be calculated using the formula: RθJC = (TJ - TC) / P, where TJ is the junction temperature, TC is the case temperature, and P is the power dissipation. The datasheet provides the thermal resistance values for different packages.
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The recommended gate drive voltage for the IRF540A is typically between 10V to 15V, depending on the application and required switching speed. A higher gate drive voltage can improve switching speed, but may also increase power consumption.
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Yes, the IRF540A can be used in high-frequency switching applications, but it's essential to consider the device's switching characteristics, such as the rise and fall times, and ensure that the gate drive circuitry is designed to minimize ringing and oscillations.
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To protect the IRF540A from overvoltage and overcurrent, it's recommended to use a voltage clamp or a transient voltage suppressor (TVS) to limit the voltage across the device. Additionally, a current sense resistor and a fuse can be used to detect and respond to overcurrent conditions.