Part Details for IRF540 by onsemi
Results Overview of IRF540 by onsemi
- Distributor Offerings: (7 listings)
- Number of FFF Equivalents: (9 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
IRF540 Information
IRF540 by onsemi is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IRF540
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
86122964
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Verical | Trans MOSFET N-CH Si 100V 27A 3-Pin(3+Tab) TO-220 RoHS: Not Compliant Min Qty: 339 Package Multiple: 1 Date Code: 0001 | Americas - 1166 |
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$1.1063 | Buy Now |
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Bristol Electronics | 150 |
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RFQ | ||
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Bristol Electronics | 120 |
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RFQ | ||
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Quest Components | 28 A, 100 V, 0.077 OHM, N-CHANNEL, SI, POWER, MOSFET, TO-220AB | 352 |
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$3.3000 / $6.0000 | Buy Now |
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Quest Components | 28 A, 100 V, 0.077 OHM, N-CHANNEL, SI, POWER, MOSFET, TO-220AB | 284 |
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$1.4245 / $3.0800 | Buy Now |
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Quest Components | 28 A, 100 V, 0.077 OHM, N-CHANNEL, SI, POWER, MOSFET, TO-220AB | 5 |
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$1.2650 / $1.3750 | Buy Now |
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Rochester Electronics | Trans MOSFET N-CH 100V 27A 3-Pin(3+Tab) TO-220 RoHS: Not Compliant Status: Obsolete Min Qty: 1 | 1200 |
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$0.5487 / $0.8850 | Buy Now |
Part Details for IRF540
IRF540 CAD Models
IRF540 Part Data Attributes
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IRF540
onsemi
Buy Now
Datasheet
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Compare Parts:
IRF540
onsemi
27A, 100V, 0.07ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, CASE 221A-09, 3 PIN
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| Rohs Code | No | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | ONSEMI | |
| Part Package Code | TO-220AB | |
| Package Description | CASE 221A-09, 3 PIN | |
| Pin Count | 3 | |
| Manufacturer Package Code | CASE 221A-09 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 4 Weeks | |
| Samacsys Manufacturer | onsemi | |
| Additional Feature | LEADFORM OPTIONS ARE AVAILABLE | |
| Avalanche Energy Rating (Eas) | 365 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 27 A | |
| Drain-source On Resistance-Max | 0.07 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e0 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | 235 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 150 W | |
| Pulsed Drain Current-Max (IDM) | 95 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | Tin/Lead (Sn/Pb) | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IRF540
This table gives cross-reference parts and alternative options found for IRF540. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF540, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
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| IRF542 | TT Electronics Power and Hybrid / Semelab Limited | Check for Price | 25A, 100V, 0.1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN | IRF540 vs IRF542 |
| IRF540 | Rochester Electronics LLC | Check for Price | 28A, 100V, 0.077ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | IRF540 vs IRF540 |
| IRF542 | International Rectifier | Check for Price | Power Field-Effect Transistor, 25A I(D), 100V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | IRF540 vs IRF542 |
| IRF540 | STMicroelectronics | Check for Price | 22A, 100V, 0.077ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220, 3 PIN | IRF540 vs IRF540 |
| IRF540 | Microsemi Corporation | Check for Price | Power Field-Effect Transistor, 28A I(D), 100V, 0.077ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC PACKAGE-3 | IRF540 vs IRF540 |
| IRF542 | National Semiconductor Corporation | Check for Price | POWER, FET | IRF540 vs IRF542 |
| IRF542 | New Jersey Semiconductor Products Inc | Check for Price | Trans MOSFET N-CH 100V 28A 3-Pin(3+Tab) TO-220AB | IRF540 vs IRF542 |
| IRF542 | Intersil Corporation | Check for Price | 25A, 100V, 0.1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | IRF540 vs IRF542 |
| IRF540 | Harris Semiconductor | Check for Price | Power Field-Effect Transistor, 28A I(D), 100V, 0.077ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | IRF540 vs IRF540 |
IRF540 Frequently Asked Questions (FAQ)
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The maximum SOA for the IRF540 is typically defined by the voltage and current ratings. The maximum voltage rating is 100V and the maximum current rating is 28A. However, it's essential to consider the thermal and power dissipation limitations to ensure safe operation.
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To calculate the power dissipation, you need to know the drain-to-source voltage (Vds) and the drain current (Id). The power dissipation (Pd) can be calculated using the formula: Pd = Vds x Id. Additionally, you should consider the thermal resistance (Rthja) and the junction temperature (Tj) to ensure the device operates within the safe operating area.
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The maximum junction temperature (Tj) for the IRF540 is 175°C. It's essential to ensure that the device operates below this temperature to prevent damage and ensure reliable operation.
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The gate resistor value depends on the specific application and the required switching frequency. A general rule of thumb is to use a gate resistor value between 10Ω to 100Ω. However, it's recommended to consult the application notes and the datasheet for more specific guidance.
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The IRF540 is a general-purpose MOSFET, and while it can be used for high-frequency switching applications, it may not be the best choice. The IRF540 has a relatively high gate capacitance, which can limit its high-frequency performance. For high-frequency applications, it's recommended to consider specialized MOSFETs designed for high-frequency switching.