Part Details for IRF533 by International Rectifier
Results Overview of IRF533 by International Rectifier
- Distributor Offerings: (3 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
IRF533 Information
IRF533 by International Rectifier is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IRF533
| Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | 754 |
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RFQ | ||
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Quest Components | TRANSISTOR,MOSFET,N-CHANNEL,80V V(BR)DSS,12A I(D),TO-220AB | 515 |
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$1.5840 / $3.8400 | Buy Now |
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Quest Components | TRANSISTOR,MOSFET,N-CHANNEL,80V V(BR)DSS,12A I(D),TO-220AB | 227 |
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$1.2960 / $2.4000 | Buy Now |
Part Details for IRF533
IRF533 CAD Models
IRF533 Part Data Attributes
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IRF533
International Rectifier
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Datasheet
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IRF533
International Rectifier
Power Field-Effect Transistor, 12A I(D), 80V, 0.23ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
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| Rohs Code | No | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | INTERNATIONAL RECTIFIER CORP | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Case Connection | DRAIN | |
| Configuration | SINGLE | |
| DS Breakdown Voltage-Min | 80 V | |
| Drain Current-Max (ID) | 12 A | |
| Drain-source On Resistance-Max | 0.23 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e0 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 79 W | |
| Pulsed Drain Current-Max (IDM) | 48 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | TIN LEAD | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Element Material | SILICON |