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Power Field-Effect Transistor, 14A I(D), 100V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, SMD-220, D2PAK-3
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IRF530STRLPBF by Vishay Intertechnologies is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
41K2309
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Newark | N Channel Mosfet, 100V, 14A Smd-220, Full Reel, Channel Type:N Channel, Drain Source Voltage Vds:100V, Continuous Drain Current Id:14A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:4Vrohs Compliant: Yes |Vishay IRF530STRLPBF RoHS: Compliant Min Qty: 800 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
|
$0.6830 / $0.9180 | Buy Now |
DISTI #
05W6867
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Newark | Mosfet, N Channel, 100V, 14A, To-263-3, Channel Type:N Channel, Drain Source Voltage Vds:100V, Continuous Drain Current Id:14A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:2V Rohs Compliant: Yes |Vishay IRF530STRLPBF RoHS: Compliant Min Qty: 800 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 0 |
|
$1.0500 | Buy Now |
DISTI #
844-IRF530STRLPBF
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Mouser Electronics | MOSFETs N-Chan 100V 14 Amp RoHS: Compliant | 3010 |
|
$0.7100 / $1.6100 | Buy Now |
DISTI #
V36:1790_09218869
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Arrow Electronics | Trans MOSFET N-CH 100V 14A 3-Pin(2+Tab) D2PAK T/R Min Qty: 800 Package Multiple: 800 Lead time: 12 Weeks Date Code: 2432 | Americas - 800 |
|
$0.6856 / $0.7210 | Buy Now |
DISTI #
V72:2272_09218869
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Arrow Electronics | Trans MOSFET N-CH 100V 14A 3-Pin(2+Tab) D2PAK T/R Min Qty: 1 Package Multiple: 1 Lead time: 15 Weeks Date Code: 2108 Container: Cut Strips | Americas - 576 |
|
$0.7282 / $0.7891 | Buy Now |
DISTI #
85019415
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Verical | Trans MOSFET N-CH 100V 14A 3-Pin(2+Tab) D2PAK T/R Min Qty: 800 Package Multiple: 800 Date Code: 2432 | Americas - 800 |
|
$0.6856 / $0.7210 | Buy Now |
DISTI #
54321328
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Verical | Trans MOSFET N-CH 100V 14A 3-Pin(2+Tab) D2PAK T/R Min Qty: 9 Package Multiple: 1 Date Code: 2108 | Americas - 576 |
|
$0.7282 / $0.7770 | Buy Now |
DISTI #
66385218
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Verical | Trans MOSFET N-CH 100V 14A 3-Pin(2+Tab) D2PAK T/R Min Qty: 43 Package Multiple: 1 Date Code: 2224 | Americas - 410 |
|
$0.8540 | Buy Now |
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Bristol Electronics | 5 |
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RFQ | ||
DISTI #
IRF530STRLPBF
|
TTI | MOSFETs N-Chan 100V 14 Amp RoHS: Compliant pbFree: Pb-Free Min Qty: 800 Package Multiple: 800 Container: Reel | Americas - 0 |
|
$0.7030 / $0.7180 | Buy Now |
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IRF530STRLPBF
Vishay Intertechnologies
Buy Now
Datasheet
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Compare Parts:
IRF530STRLPBF
Vishay Intertechnologies
Power Field-Effect Transistor, 14A I(D), 100V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, SMD-220, D2PAK-3
|
Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
Package Description | LEAD FREE, PLASTIC, SMD-220, D2PAK-3 | |
Pin Count | 3 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Factory Lead Time | 12 Weeks | |
Samacsys Manufacturer | Vishay | |
Avalanche Energy Rating (Eas) | 69 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 100 V | |
Drain Current-Max (ID) | 14 A | |
Drain-source On Resistance-Max | 0.16 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PSSO-G2 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 88 W | |
Pulsed Drain Current-Max (IDM) | 56 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | MATTE TIN | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for IRF530STRLPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF530STRLPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Manufacturer | Composite Price | Description | Compare |
---|---|---|---|---|
SIHF530STRR-GE3 | Vishay Intertechnologies | $0.4161 | Power Field-Effect Transistor, 14A I(D), 100V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, HALOGEN FREE AND ROHS COMPLIANT, TO-263, D2PAK-3 | IRF530STRLPBF vs SIHF530STRR-GE3 |
IRF530SPBF | International Rectifier | Check for Price | Power Field-Effect Transistor, 14A I(D), 100V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, SMD-220, D2PAK-3 | IRF530STRLPBF vs IRF530SPBF |
IRF530STRR | International Rectifier | Check for Price | Power Field-Effect Transistor, 14A I(D), 100V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN | IRF530STRLPBF vs IRF530STRR |
The maximum operating temperature range for the IRF530STRLPBF is -55°C to 175°C.
To ensure reliability, ensure proper thermal management, use a suitable heat sink, and follow the recommended PCB layout and assembly guidelines.
The maximum allowable voltage for the IRF530STRLPBF is 100V.
Yes, the IRF530STRLPBF is suitable for high-frequency switching applications up to 1MHz, but ensure proper PCB layout and decoupling to minimize parasitic inductance and capacitance.
Handle the IRF530STRLPBF with ESD-protective equipment, and ensure proper grounding and shielding during storage, handling, and assembly.