Datasheets
IRF5210STRLPBF by:

Power Field-Effect Transistor, 38A I(D), 100V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, D2PAK-3

Part Details for IRF5210STRLPBF by Infineon Technologies AG

Results Overview of IRF5210STRLPBF by Infineon Technologies AG

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Applications Industrial Automation Energy and Power Systems Renewable Energy

IRF5210STRLPBF Information

IRF5210STRLPBF by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for IRF5210STRLPBF

Part # Distributor Description Stock Price Buy
DISTI # 40M7918
Newark P Channel Mosfet, -100V, 40A D2-Pak, Channel Type:P Channel, Drain Source Voltage Vds:100V, Continuous Drain Current Id:38A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:4V Rohs Compliant: Yes |Infineon IRF5210STRLPBF RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape 32393
  • 1 $1.9800
  • 10 $1.8200
  • 25 $1.8200
  • 50 $1.8200
  • 100 $1.8200
  • 250 $1.8200
  • 500 $1.8200
  • 1,600 $1.6800
$1.6800 / $1.9800 Buy Now
DISTI # IRF5210STRLPBFCT-ND
DigiKey MOSFET P-CH 100V 38A D2PAK Min Qty: 1 Lead time: 8 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) 5239
In Stock
  • 1 $3.7700
  • 10 $1.9530
  • 100 $1.7745
  • 800 $1.4070
  • 1,600 $1.3389
$1.3389 / $3.7700 Buy Now
DISTI # IRF5210STRLPBF
Avnet Americas Power MOSFET, P Channel, 100 V, 38 A, 60 Milliohms, TO-263AB (D2PAK), 3 Pins, Surface Mount - Tape and Reel (Alt: IRF5210STRLPBF) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Lead time: 8 Weeks, 0 Days Container: Reel 1600
  • 800 $1.0863
  • 1,600 $1.0737
  • 3,200 $1.0595
  • 4,800 $1.0469
  • 6,400 $1.0327
$1.0327 / $1.0863 Buy Now
DISTI # 40M7918
Avnet Americas Power MOSFET, P Channel, 100 V, 38 A, 60 Milliohms, TO-263AB (D2PAK), 3 Pins, Surface Mount - Product that comes on tape, but is not reeled (Alt: 40M7918) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 17 Weeks, 3 Days Container: Ammo Pack 3278 Partner Stock
  • 1 $4.3200
  • 10 $2.6300
  • 25 $2.5900
  • 50 $2.4200
  • 100 $2.2400
$2.2400 / $4.3200 Buy Now
DISTI # IRF5210STRLPBF
Avnet Americas Power MOSFET, P Channel, 100 V, 38 A, 60 Milliohms, TO-263AB (D2PAK), 3 Pins, Surface Mount - Tape and Reel (Alt: IRF5210STRLPBF) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Lead time: 10 Weeks, 0 Days Container: Reel 0
  • 800 $1.0979
  • 1,600 $1.0800
  • 3,200 $1.0622
  • 4,800 $1.0443
  • 6,400 $1.0265
$1.0265 / $1.0979 Buy Now
DISTI # 942-IRF5210STRLPBF
Mouser Electronics MOSFETs MOSFT PCh -100V -0.4A 60mOhm 120nC RoHS: Compliant 14775
  • 1 $3.6200
  • 10 $1.7600
  • 25 $1.7200
  • 100 $1.6900
  • 800 $1.3300
$1.3300 / $3.6200 Buy Now
DISTI # E02:0323_00010801
Arrow Electronics Trans MOSFET P-CH 100V 38A 3-Pin(2+Tab) D2PAK T/R Min Qty: 800 Package Multiple: 800 Lead time: 8 Weeks Date Code: 2514 Europe - 24800
  • 800 $1.2778
  • 1,600 $1.2464
$1.2464 / $1.2778 Buy Now
DISTI # V36:1790_13889922
Arrow Electronics Trans MOSFET P-CH 100V 38A 3-Pin(2+Tab) D2PAK T/R Min Qty: 800 Package Multiple: 800 Lead time: 8 Weeks Date Code: 2437 Americas - 18400
  • 800 $1.3148
  • 1,600 $1.2754
$1.2754 / $1.3148 Buy Now
DISTI # 70017442
RS MOSFET, Power, P-Ch, VDSS -100V, RDS(ON) 60 Milliohms, ID -38A, D2Pak, PD 170W,-55degc Min Qty: 1 Package Multiple: 1 Lead time: 3 Weeks, 0 Days Container: Bulk 154
  • 1 $0.8800
$0.8800 Buy Now
Future Electronics Single P-Channel 100 V 0.06 Ohm 180 nC HEXFET® Power Mosfet - D2PAK RoHS: Compliant pbFree: Yes Min Qty: 800 Package Multiple: 800 Lead time: 8 Weeks Container: Reel 30400
Reel
  • 800 $1.1200
  • 1,600 $1.1100
  • 3,200 $1.1000
  • 4,000 $1.0900
$1.0900 / $1.1200 Buy Now
Future Electronics Single P-Channel 100 V 0.06 Ohm 180 nC HEXFET® Power Mosfet - D2PAK RoHS: Compliant pbFree: Yes Min Qty: 800 Package Multiple: 800 Lead time: 8 Weeks Container: Reel 0
Reel
  • 800 $1.1200
  • 1,600 $1.1100
  • 3,200 $1.1000
  • 4,000 $1.0900
$1.0900 / $1.1200 Buy Now
DISTI # 88210240
Verical Trans MOSFET P-CH 100V 38A 3-Pin(2+Tab) D2PAK T/R Min Qty: 800 Package Multiple: 800 Date Code: 2514 Americas - 24800
  • 800 $2.0092
$2.0092 Buy Now
DISTI # 87690264
Verical Trans MOSFET P-CH 100V 38A 3-Pin(2+Tab) D2PAK T/R Min Qty: 800 Package Multiple: 800 Date Code: 2437 Americas - 18400
  • 800 $1.3148
  • 1,600 $1.2754
$1.2754 / $1.3148 Buy Now
DISTI # 69265511
Verical Trans MOSFET P-CH 100V 38A 3-Pin(2+Tab) D2PAK T/R Min Qty: 29 Package Multiple: 1 Date Code: 2314 Americas - 3811
  • 29 $1.0600
  • 100 $1.0500
  • 3,200 $1.0390
$1.0390 / $1.0600 Buy Now
Bristol Electronics   800
RFQ
Bristol Electronics   Min Qty: 3 289
  • 3 $2.4000
  • 10 $1.8000
  • 29 $1.5000
  • 101 $0.9000
$0.9000 / $2.4000 Buy Now
Quest Components POWER FIELD-EFFECT TRANSISTOR, 38A I(D), 100V, 0.06OHM, 1-ELEMENT, P-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-263AB 640
  • 1 $3.3300
  • 181 $1.5401
  • 391 $1.3736
$1.3736 / $3.3300 Buy Now
Quest Components POWER FIELD-EFFECT TRANSISTOR, 38A I(D), 100V, 0.06OHM, 1-ELEMENT, P-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-263AB 231
  • 1 $3.2000
  • 39 $1.2000
  • 126 $1.1200
$1.1200 / $3.2000 Buy Now
Future Electronics Single P-Channel 100 V 0.06 Ohm 180 nC HEXFET� Power Mosfet - D2PAK Min Qty: 800 Package Multiple: 800 30400
null
  • 800 $1.1200
  • 1,600 $1.1100
  • 3,200 $1.1000
  • 4,000 $1.0900
$1.0900 / $1.1200 Buy Now
DISTI # IRF5210STRLPBF
TME Transistor: P-MOSFET, unipolar, -100V, -40A, 3.8W, D2PAK Min Qty: 1 68
  • 1 $2.6000
  • 10 $2.1400
  • 25 $1.9200
  • 100 $1.8100
  • 250 $1.6900
  • 500 $1.5800
  • 800 $1.4700
$1.4700 / $2.6000 Buy Now
ComSIT USA Power Field-Effect Transistor, 38A I(D), 100V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB ECCN: EAR99 RoHS: Compliant Stock DE - 695
Stock ES - 0
Stock US - 0
Stock MX - 0
Stock CN - 0
Stock HK - 0
RFQ
DISTI # TMOSP11801
Rutronik P-CH 100V 38A 60mOhm D2PAK RoHS: Compliant Min Qty: 800 Package Multiple: 800 Container: Reel Stock DE - 3200
Stock HK - 0
Stock US - 0
Stock SG - 0
  • 800 $1.6700
  • 1,600 $1.5800
  • 2,400 $1.4800
  • 3,200 $1.3400
  • 5,600 $1.2800
$1.2800 / $1.6700 Buy Now
DISTI # SMC-IRF5210STRLPBF
Sensible Micro Corporation OEM Excess 5-7 Days Leadtime, We are an AS6081 Certified Vendor, 1 Yr Warranty RoHS: Not Compliant Min Qty: 25 Lead time: 2 Weeks, 0 Days 925
RFQ
Velocity Electronics Our Stock 20000
RFQ
DISTI # IRF5210STRLPBF
Chip One Stop Semiconductors RoHS: Compliant Min Qty: 1 Lead time: 0 Weeks, 1 Days Container: Cut Tape 3811
  • 1 $1.0700
  • 50 $1.0600
  • 100 $1.0400
  • 1,600 $1.0300
  • 3,200 $0.9280
$0.9280 / $1.0700 Buy Now
DISTI # SP001554020
EBV Elektronik Power MOSFET P Channel 100 V 38 A 60 Milliohms TO263AB D2PAK 3 Pins Surface Mount (Alt: SP001554020) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Lead time: 9 Weeks, 0 Days EBV - 108800
Buy Now
Win Source Electronics MOSFET P-CH 100V 38A D2PAK 25480
  • 60 $0.5597
  • 130 $0.5236
  • 200 $0.5055
  • 285 $0.4694
  • 370 $0.4514
  • 465 $0.4333
$0.4333 / $0.5597 Buy Now

Part Details for IRF5210STRLPBF

IRF5210STRLPBF Part Data Attributes

IRF5210STRLPBF Infineon Technologies AG
Buy Now Datasheet
Compare Parts:
IRF5210STRLPBF Infineon Technologies AG Power Field-Effect Transistor, 38A I(D), 100V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, D2PAK-3
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Reach Compliance Code not_compliant
ECCN Code EAR99
Factory Lead Time 17 Weeks, 3 Days
Samacsys Manufacturer Infineon
Additional Feature HIGH RELIABILITY, AVALANCHE RATED, ULTRA-LOW RESISTANCE
Avalanche Energy Rating (Eas) 120 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 100 V
Drain Current-Max (ID) 38 A
Drain-source On Resistance-Max 0.06 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-263AB
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type P-CHANNEL
Power Dissipation-Max (Abs) 170 W
Pulsed Drain Current-Max (IDM) 140 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IRF5210STRLPBF

This table gives cross-reference parts and alternative options found for IRF5210STRLPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF5210STRLPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
IRF5210S Infineon Technologies AG Check for Price Power Field-Effect Transistor, 38A I(D), 100V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3 IRF5210STRLPBF vs IRF5210S
IRF5210S International Rectifier Check for Price Power Field-Effect Transistor, 38A I(D), 100V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3 IRF5210STRLPBF vs IRF5210S
AUIRF5210STRL International Rectifier Check for Price Power Field-Effect Transistor, 38A I(D), 100V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, PLASTIC, D2PAK-3/2 IRF5210STRLPBF vs AUIRF5210STRL
IRF5210SPBF Infineon Technologies AG Check for Price Power Field-Effect Transistor, 38A I(D), 100V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, D2PAK-3 IRF5210STRLPBF vs IRF5210SPBF
AUIRF5210STRR International Rectifier Check for Price Power Field-Effect Transistor, 38A I(D), 100V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, PLASTIC, D2PAK-3/2 IRF5210STRLPBF vs AUIRF5210STRR
IRF5210STRRPBF Infineon Technologies AG Check for Price Power Field-Effect Transistor, 38A I(D), 100V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, D2PAK-3 IRF5210STRLPBF vs IRF5210STRRPBF
IRF5210STRRPBF International Rectifier Check for Price Power Field-Effect Transistor, 38A I(D), 100V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, D2PAK-3 IRF5210STRLPBF vs IRF5210STRRPBF
IRF5210SPBF International Rectifier Check for Price Power Field-Effect Transistor, 38A I(D), 100V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, D2PAK-3 IRF5210STRLPBF vs IRF5210SPBF
Part Number Manufacturer Composite Price Description Compare
IRF5210PBF Infineon Technologies AG $1.2729 Power Field-Effect Transistor, 40A I(D), 100V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3 IRF5210STRLPBF vs IRF5210PBF
IXTH36P10 IXYS Corporation $1.4444 Power Field-Effect Transistor, 36A I(D), 100V, 0.075ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, IRF5210STRLPBF vs IXTH36P10
IRF5210STRL International Rectifier Check for Price Power Field-Effect Transistor, 38A I(D), 100V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3 IRF5210STRLPBF vs IRF5210STRL
IRF5210S New Jersey Semiconductor Products Inc Check for Price Trans MOSFET P-CH 100V 40A 3-Pin(2+Tab) D2PAK IRF5210STRLPBF vs IRF5210S
IRF5210HR International Rectifier Check for Price Power Field-Effect Transistor, 40A I(D), 100V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN IRF5210STRLPBF vs IRF5210HR
IXTH36P10 Littelfuse Inc Check for Price Power Field-Effect Transistor, IRF5210STRLPBF vs IXTH36P10
SHD225452S Sensitron Semiconductors Check for Price Power Field-Effect Transistor, 34A I(D), 100V, 0.07ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED, TO-254, 3 PIN IRF5210STRLPBF vs SHD225452S
SHD225452 Sensitron Semiconductors Check for Price Power Field-Effect Transistor, 34A I(D), 100V, 0.07ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED, TO-254, 3 PIN IRF5210STRLPBF vs SHD225452
IRF5210SHR International Rectifier Check for Price Power Field-Effect Transistor, 40A I(D), 100V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK-3 IRF5210STRLPBF vs IRF5210SHR
IRF5210LHR International Rectifier Check for Price Power Field-Effect Transistor, 40A I(D), 100V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, TO-262, 3 PIN IRF5210STRLPBF vs IRF5210LHR

IRF5210STRLPBF Related Parts

IRF5210STRLPBF Frequently Asked Questions (FAQ)

  • The maximum operating temperature range for the IRF5210STRLPBF is -55°C to 175°C.

  • To ensure reliability, it's essential to follow proper thermal management practices, such as providing adequate heat sinking, using thermal interface materials, and ensuring good airflow around the device.

  • The recommended gate drive voltage for the IRF5210STRLPBF is between 10V and 15V, with a maximum gate-source voltage of ±20V.

  • To protect the IRF5210STRLPBF from ESD, handle the device with anti-static wrist straps, mats, or bags, and ensure that the device is stored in a static-safe environment.

  • The maximum allowable power dissipation for the IRF5210STRLPBF is 150W, but this value can be derated based on the operating temperature and other factors.

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