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Power Field-Effect Transistor, 38A I(D), 100V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, D2PAK-3
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
IRF5210STRLPBF by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
40M7918
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Newark | P Channel Mosfet, -100V, 40A D2-Pak, Channel Type:P Channel, Drain Source Voltage Vds:100V, Continuous Drain Current Id:38A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:4V Rohs Compliant: Yes |Infineon IRF5210STRLPBF RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 32393 |
|
$1.6800 / $1.9800 | Buy Now |
DISTI #
IRF5210STRLPBFCT-ND
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DigiKey | MOSFET P-CH 100V 38A D2PAK Min Qty: 1 Lead time: 8 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) |
5239 In Stock |
|
$1.3389 / $3.7700 | Buy Now |
DISTI #
IRF5210STRLPBF
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Avnet Americas | Power MOSFET, P Channel, 100 V, 38 A, 60 Milliohms, TO-263AB (D2PAK), 3 Pins, Surface Mount - Tape and Reel (Alt: IRF5210STRLPBF) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Lead time: 8 Weeks, 0 Days Container: Reel | 1600 |
|
$1.0327 / $1.0863 | Buy Now |
DISTI #
40M7918
|
Avnet Americas | Power MOSFET, P Channel, 100 V, 38 A, 60 Milliohms, TO-263AB (D2PAK), 3 Pins, Surface Mount - Product that comes on tape, but is not reeled (Alt: 40M7918) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 17 Weeks, 3 Days Container: Ammo Pack | 3278 Partner Stock |
|
$2.2400 / $4.3200 | Buy Now |
DISTI #
IRF5210STRLPBF
|
Avnet Americas | Power MOSFET, P Channel, 100 V, 38 A, 60 Milliohms, TO-263AB (D2PAK), 3 Pins, Surface Mount - Tape and Reel (Alt: IRF5210STRLPBF) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Lead time: 10 Weeks, 0 Days Container: Reel | 0 |
|
$1.0265 / $1.0979 | Buy Now |
DISTI #
942-IRF5210STRLPBF
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Mouser Electronics | MOSFETs MOSFT PCh -100V -0.4A 60mOhm 120nC RoHS: Compliant | 14775 |
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$1.3300 / $3.6200 | Buy Now |
DISTI #
E02:0323_00010801
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Arrow Electronics | Trans MOSFET P-CH 100V 38A 3-Pin(2+Tab) D2PAK T/R Min Qty: 800 Package Multiple: 800 Lead time: 8 Weeks Date Code: 2514 | Europe - 24800 |
|
$1.2464 / $1.2778 | Buy Now |
DISTI #
V36:1790_13889922
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Arrow Electronics | Trans MOSFET P-CH 100V 38A 3-Pin(2+Tab) D2PAK T/R Min Qty: 800 Package Multiple: 800 Lead time: 8 Weeks Date Code: 2437 | Americas - 18400 |
|
$1.2754 / $1.3148 | Buy Now |
DISTI #
70017442
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RS | MOSFET, Power, P-Ch, VDSS -100V, RDS(ON) 60 Milliohms, ID -38A, D2Pak, PD 170W,-55degc Min Qty: 1 Package Multiple: 1 Lead time: 3 Weeks, 0 Days Container: Bulk | 154 |
|
$0.8800 | Buy Now |
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Future Electronics | Single P-Channel 100 V 0.06 Ohm 180 nC HEXFET® Power Mosfet - D2PAK RoHS: Compliant pbFree: Yes Min Qty: 800 Package Multiple: 800 Lead time: 8 Weeks Container: Reel | 30400Reel |
|
$1.0900 / $1.1200 | Buy Now |
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IRF5210STRLPBF
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IRF5210STRLPBF
Infineon Technologies AG
Power Field-Effect Transistor, 38A I(D), 100V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, D2PAK-3
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Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 17 Weeks, 3 Days | |
Samacsys Manufacturer | Infineon | |
Additional Feature | HIGH RELIABILITY, AVALANCHE RATED, ULTRA-LOW RESISTANCE | |
Avalanche Energy Rating (Eas) | 120 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 100 V | |
Drain Current-Max (ID) | 38 A | |
Drain-source On Resistance-Max | 0.06 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-263AB | |
JESD-30 Code | R-PSSO-G2 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | P-CHANNEL | |
Power Dissipation-Max (Abs) | 170 W | |
Pulsed Drain Current-Max (IDM) | 140 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | Matte Tin (Sn) - with Nickel (Ni) barrier | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for IRF5210STRLPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF5210STRLPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Manufacturer | Composite Price | Description | Compare |
---|---|---|---|---|
IRF5210S | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 38A I(D), 100V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3 | IRF5210STRLPBF vs IRF5210S |
IRF5210S | International Rectifier | Check for Price | Power Field-Effect Transistor, 38A I(D), 100V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3 | IRF5210STRLPBF vs IRF5210S |
AUIRF5210STRL | International Rectifier | Check for Price | Power Field-Effect Transistor, 38A I(D), 100V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, PLASTIC, D2PAK-3/2 | IRF5210STRLPBF vs AUIRF5210STRL |
IRF5210SPBF | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 38A I(D), 100V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, D2PAK-3 | IRF5210STRLPBF vs IRF5210SPBF |
AUIRF5210STRR | International Rectifier | Check for Price | Power Field-Effect Transistor, 38A I(D), 100V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, PLASTIC, D2PAK-3/2 | IRF5210STRLPBF vs AUIRF5210STRR |
IRF5210STRRPBF | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 38A I(D), 100V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, D2PAK-3 | IRF5210STRLPBF vs IRF5210STRRPBF |
IRF5210STRRPBF | International Rectifier | Check for Price | Power Field-Effect Transistor, 38A I(D), 100V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, D2PAK-3 | IRF5210STRLPBF vs IRF5210STRRPBF |
IRF5210SPBF | International Rectifier | Check for Price | Power Field-Effect Transistor, 38A I(D), 100V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, D2PAK-3 | IRF5210STRLPBF vs IRF5210SPBF |
The maximum operating temperature range for the IRF5210STRLPBF is -55°C to 175°C.
To ensure reliability, it's essential to follow proper thermal management practices, such as providing adequate heat sinking, using thermal interface materials, and ensuring good airflow around the device.
The recommended gate drive voltage for the IRF5210STRLPBF is between 10V and 15V, with a maximum gate-source voltage of ±20V.
To protect the IRF5210STRLPBF from ESD, handle the device with anti-static wrist straps, mats, or bags, and ensure that the device is stored in a static-safe environment.
The maximum allowable power dissipation for the IRF5210STRLPBF is 150W, but this value can be derated based on the operating temperature and other factors.