Part Details for IRF5210SPBF by International Rectifier
Results Overview of IRF5210SPBF by International Rectifier
- Distributor Offerings: (7 listings)
- Number of FFF Equivalents: (9 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Industrial Automation
Energy and Power Systems
Renewable Energy
IRF5210SPBF Information
IRF5210SPBF by International Rectifier is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IRF5210SPBF
| Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | 35 |
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RFQ | ||
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Quest Components | 38 A, 100 V, 0.06 OHM, P-CHANNEL, SI, POWER, MOSFET, TO-263AB | 81 |
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$1.0160 / $1.6933 | Buy Now |
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Quest Components | 38 A, 100 V, 0.06 OHM, P-CHANNEL, SI, POWER, MOSFET, TO-263AB | 20 |
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$6.5000 / $9.7500 | Buy Now |
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Quest Components | 38 A, 100 V, 0.06 OHM, P-CHANNEL, SI, POWER, MOSFET, TO-263AB | 8 |
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$2.3940 / $3.1920 | Buy Now |
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Rochester Electronics | IRF5210S - MOSFET P-Channel Single RoHS: Compliant Status: Obsolete Min Qty: 1 | 813 |
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$2.4600 / $3.0700 | Buy Now |
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ComSIT USA | Electronic Component RoHS: Compliant |
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RFQ | |
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Component Electronics, Inc | IN STOCK SHIP TODAY | 2 |
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$2.0000 / $3.0800 | Buy Now |
Part Details for IRF5210SPBF
IRF5210SPBF CAD Models
IRF5210SPBF Part Data Attributes
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IRF5210SPBF
International Rectifier
Buy Now
Datasheet
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Compare Parts:
IRF5210SPBF
International Rectifier
Power Field-Effect Transistor, 38A I(D), 100V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, D2PAK-3
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | INTERNATIONAL RECTIFIER CORP | |
| Part Package Code | D2PAK | |
| Package Description | LEAD FREE, D2PAK-3 | |
| Pin Count | 3 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Additional Feature | HIGH RELIABILITY, AVALANCHE RATED, ULTRA-LOW RESISTANCE | |
| Avalanche Energy Rating (Eas) | 120 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 38 A | |
| Drain-source On Resistance-Max | 0.06 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-263AB | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | P-CHANNEL | |
| Power Dissipation-Max (Abs) | 170 W | |
| Pulsed Drain Current-Max (IDM) | 140 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) - with Nickel (Ni) barrier | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IRF5210SPBF
This table gives cross-reference parts and alternative options found for IRF5210SPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF5210SPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| IRF5210STRLPBF | Infineon Technologies AG | $1.9359 | Power Field-Effect Transistor, 38A I(D), 100V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, D2PAK-3 | IRF5210SPBF vs IRF5210STRLPBF |
| IRF5210S | International Rectifier | Check for Price | Power Field-Effect Transistor, 38A I(D), 100V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3 | IRF5210SPBF vs IRF5210S |
| IRF5210STRLPBF | International Rectifier | Check for Price | Power Field-Effect Transistor, 38A I(D), 100V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, D2PAK-3 | IRF5210SPBF vs IRF5210STRLPBF |
| IRF5210STRL | International Rectifier | Check for Price | Power Field-Effect Transistor, 38A I(D), 100V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3 | IRF5210SPBF vs IRF5210STRL |
| IRF5210S | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 38A I(D), 100V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3 | IRF5210SPBF vs IRF5210S |
| IRF5210STRRPBF | International Rectifier | Check for Price | Power Field-Effect Transistor, 38A I(D), 100V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, D2PAK-3 | IRF5210SPBF vs IRF5210STRRPBF |
| AUIRF5210STRR | International Rectifier | Check for Price | Power Field-Effect Transistor, 38A I(D), 100V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, PLASTIC, D2PAK-3/2 | IRF5210SPBF vs AUIRF5210STRR |
| IRF5210STRR | International Rectifier | Check for Price | Power Field-Effect Transistor, 38A I(D), 100V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3 | IRF5210SPBF vs IRF5210STRR |
| IRF5210STRRPBF | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 38A I(D), 100V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, D2PAK-3 | IRF5210SPBF vs IRF5210STRRPBF |
IRF5210SPBF Frequently Asked Questions (FAQ)
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The maximum operating temperature range for the IRF5210SPBF is -55°C to 175°C.
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Yes, the IRF5210SPBF is qualified to automotive and industrial standards, making it suitable for high-reliability applications.
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Proper cooling can be achieved by using a heat sink with a thermal resistance of less than 10°C/W, and ensuring good airflow around the device.
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The recommended gate drive voltage for the IRF5210SPBF is between 10V and 15V, with a maximum gate-source voltage of ±20V.
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Yes, the IRF5210SPBF is suitable for switching applications, with a rise time of less than 10ns and a fall time of less than 20ns.