Part Details for IRF5210SPBF by Infineon Technologies AG
Results Overview of IRF5210SPBF by Infineon Technologies AG
- Distributor Offerings: (6 listings)
- Number of FFF Equivalents: (7 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Industrial Automation
Energy and Power Systems
Renewable Energy
IRF5210SPBF Information
IRF5210SPBF by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IRF5210SPBF
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
IRF5210SPBF-ND
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DigiKey | MOSFET P-CH 100V 38A D2PAK Lead time: 52 Weeks Container: Tube | Limited Supply - Call |
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Buy Now | |
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DISTI #
SMC-IRF5210SPBF
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Sensible Micro Corporation | Transistor,Irf5210S,P-Ch Mosfet,D2Pak RoHS: Compliant Min Qty: 25 Lead time: 0 Weeks, 1 Days Date Code: 05+ Container: Tubes | 50 |
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$0.8100 / $0.8775 | RFQ |
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DISTI #
SMC-IRF5210SPBF
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Sensible Micro Corporation | Hexfet Power Mosfet | Mosfet P-Ch 100V 38A D2Pak RoHS: Not Compliant Min Qty: 25 Lead time: 0 Weeks, 1 Days | 0 |
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$0.8100 / $0.8775 | RFQ |
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Chip-Germany GmbH | RoHS: Not Compliant Container: SINGLE | 1 |
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RFQ | |
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DISTI #
SP001570130
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EBV Elektronik | Trans MOSFET PCH 100V 38A 3Pin2Tab D2PAK (Alt: SP001570130) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 143 Weeks, 0 Days | EBV - 0 |
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Buy Now | |
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Win Source Electronics | HEXFET Power MOSFET | MOSFET P-CH 100V 38A D2PAK | 26520 |
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$0.4333 / $0.5597 | Buy Now |
Part Details for IRF5210SPBF
IRF5210SPBF CAD Models
IRF5210SPBF Part Data Attributes
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IRF5210SPBF
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IRF5210SPBF
Infineon Technologies AG
Power Field-Effect Transistor, 38A I(D), 100V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, D2PAK-3
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Infineon | |
| Additional Feature | HIGH RELIABILITY, AVALANCHE RATED, ULTRA-LOW RESISTANCE | |
| Avalanche Energy Rating (Eas) | 120 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 38 A | |
| Drain-source On Resistance-Max | 0.06 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-263AB | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | P-CHANNEL | |
| Power Dissipation-Max (Abs) | 170 W | |
| Pulsed Drain Current-Max (IDM) | 140 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | MATTE TIN OVER NICKEL | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IRF5210SPBF
This table gives cross-reference parts and alternative options found for IRF5210SPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF5210SPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| IRF5210S | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 38A I(D), 100V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3 | IRF5210SPBF vs IRF5210S |
| IRF5210S | International Rectifier | Check for Price | Power Field-Effect Transistor, 38A I(D), 100V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3 | IRF5210SPBF vs IRF5210S |
| AUIRF5210STRL | International Rectifier | Check for Price | Power Field-Effect Transistor, 38A I(D), 100V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, PLASTIC, D2PAK-3/2 | IRF5210SPBF vs AUIRF5210STRL |
| AUIRF5210STRR | International Rectifier | Check for Price | Power Field-Effect Transistor, 38A I(D), 100V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, PLASTIC, D2PAK-3/2 | IRF5210SPBF vs AUIRF5210STRR |
| IRF5210STRRPBF | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 38A I(D), 100V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, D2PAK-3 | IRF5210SPBF vs IRF5210STRRPBF |
| IRF5210STRRPBF | International Rectifier | Check for Price | Power Field-Effect Transistor, 38A I(D), 100V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, D2PAK-3 | IRF5210SPBF vs IRF5210STRRPBF |
| IRF5210SPBF | International Rectifier | Check for Price | Power Field-Effect Transistor, 38A I(D), 100V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, D2PAK-3 | IRF5210SPBF vs IRF5210SPBF |
IRF5210SPBF Frequently Asked Questions (FAQ)
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The maximum operating temperature range for the IRF5210SPBF is -55°C to 175°C.
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To ensure reliability, it's essential to follow proper thermal management practices, such as providing adequate heat sinking, using thermal interface materials, and ensuring good airflow around the device.
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The recommended gate drive voltage for the IRF5210SPBF is between 10V and 15V, with a maximum gate-source voltage of ±20V.
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To protect the IRF5210SPBF from ESD, handle the device with anti-static wrist straps, mats, or bags, and ensure that the device is stored in a static-safe environment.
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The maximum allowable power dissipation for the IRF5210SPBF is 150W, but this can be increased with proper heat sinking and thermal management.