Part Details for IRF510STRRPBF by Vishay Intertechnologies
Results Overview of IRF510STRRPBF by Vishay Intertechnologies
- Distributor Offerings: (8 listings)
- Number of FFF Equivalents: (1 replacement)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (2 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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IRF510STRRPBF Information
IRF510STRRPBF by Vishay Intertechnologies is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IRF510STRRPBF
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
IRF510STRRPBF
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Avnet Americas | MOSFET N-CHANNEL 100V - Tape and Reel (Alt: IRF510STRRPBF) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Lead time: 8 Weeks, 0 Days Container: Reel | 0 |
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$0.5059 / $0.5375 | Buy Now |
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DISTI #
844-IRF510STRRPBF
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Mouser Electronics | MOSFETs TO263 100V 5.6A N-CH MOSFET RoHS: Compliant | 561 |
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$0.5340 / $1.3100 | Buy Now |
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DISTI #
V72:2272_09218866
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Arrow Electronics | Trans MOSFET N-CH 100V 5.6A 3-Pin(2+Tab) D2PAK T/R Min Qty: 1 Package Multiple: 1 Lead time: 10 Weeks Date Code: 1926 Container: Cut Strips | Americas - 9 |
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$0.5772 | Buy Now |
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DISTI #
66386441
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Verical | Trans MOSFET N-CH 100V 5.6A 3-Pin(2+Tab) D2PAK T/R Min Qty: 56 Package Multiple: 1 Date Code: 2136 | Americas - 570 |
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$0.6570 | Buy Now |
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DISTI #
IRF510STRRPBF
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TTI | MOSFETs TO263 100V 5.6A N-CH MOSFET RoHS: Compliant pbFree: Pb-Free Min Qty: 800 Package Multiple: 800 Container: Reel | Americas - 0 |
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$0.5240 / $0.5680 | Buy Now |
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DISTI #
IRF510STRRPBF
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TME | Transistor: N-MOSFET, unipolar, 100V, 5.6A, Idm: 20A, 43W Min Qty: 1 | 0 |
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$0.4360 / $0.7550 | RFQ |
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DISTI #
IRF510STRRPBF
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Chip One Stop | Semiconductors RoHS: Compliant pbFree: Yes Min Qty: 1 Lead time: 0 Weeks, 1 Days Container: Cut Tape | 570 |
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$0.6570 | Buy Now |
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DISTI #
IRF510STRRPBF
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EBV Elektronik | MOSFET NCHANNEL 100V (Alt: IRF510STRRPBF) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Lead time: 9 Weeks, 0 Days | EBV - 0 |
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Buy Now |
Part Details for IRF510STRRPBF
IRF510STRRPBF CAD Models
IRF510STRRPBF Part Data Attributes
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IRF510STRRPBF
Vishay Intertechnologies
Buy Now
Datasheet
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Compare Parts:
IRF510STRRPBF
Vishay Intertechnologies
Power Field-Effect Transistor, 5.6A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, SMD-220, D2PAK-3
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
| Package Description | LEAD FREE, PLASTIC, SMD-220, D2PAK-3 | |
| Pin Count | 3 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 8 Weeks | |
| Samacsys Manufacturer | Vishay | |
| Additional Feature | AVALANCHE RATED | |
| Avalanche Energy Rating (Eas) | 100 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 5.6 A | |
| Drain-source On Resistance-Max | 0.54 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 43 W | |
| Pulsed Drain Current-Max (IDM) | 20 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | TIN | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IRF510STRRPBF
This table gives cross-reference parts and alternative options found for IRF510STRRPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF510STRRPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| IRF510SPBF | Vishay Intertechnologies | $0.5614 | Power Field-Effect Transistor, 5.6A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, SMD-220, D2PAK-3 | IRF510STRRPBF vs IRF510SPBF |
IRF510STRRPBF Frequently Asked Questions (FAQ)
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The maximum operating temperature range for the IRF510STRRPBF is -55°C to 150°C.
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No, the IRF510STRRPBF is a standard MOSFET and requires a higher gate-source voltage (typically 10V) to fully turn on.
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The maximum current rating for the IRF510STRRPBF is 5.6A.
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The IRF510STRRPBF has a relatively high gate-drain capacitance, which may limit its suitability for high-frequency switching applications. It's recommended to use a MOSFET with lower capacitance for high-frequency applications.
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The IRF510STRRPBF is not recommended for linear amplifier applications due to its high drain-source resistance (RDS(on)) and limited safe operating area (SOA). A MOSFET with lower RDS(on) and a larger SOA is recommended for linear amplifier applications.