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Power Field-Effect Transistor, 5.6A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, SMD-220, D2PAK-3
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
IRF510SPBF by Vishay Intertechnologies is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
38K2798
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Newark | Mosfet Transistor, N Channel, 5.6 A, 100 V, 540 Mohm, 10 V, 4 V Rohs Compliant: Yes |Vishay IRF510SPBF RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk | 1987 |
|
$0.5400 | Buy Now |
DISTI #
38K2798
|
Avnet Americas | MOSFET N-CHANNEL 100V - Bulk (Alt: 38K2798) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 19 Weeks, 0 Days Container: Bulk | 165 Partner Stock |
|
$0.8850 / $1.7500 | Buy Now |
DISTI #
844-IRF510SPBF
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Mouser Electronics | MOSFETs N-Chan 100V 5.6 Amp RoHS: Compliant | 7438 |
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$0.5390 / $1.3700 | Buy Now |
DISTI #
E02:0323_00192875
|
Arrow Electronics | Trans MOSFET N-CH 100V 5.6A 3-Pin(2+Tab) D2PAK Min Qty: 1 Package Multiple: 1 Lead time: 8 Weeks | Europe - 1767 |
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$0.4873 / $0.6552 | Buy Now |
DISTI #
V99:2348_07434423
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Arrow Electronics | Trans MOSFET N-CH 100V 5.6A 3-Pin(2+Tab) D2PAK Min Qty: 1 Package Multiple: 1 Lead time: 10 Weeks Date Code: 2220 | Americas - 360 |
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$0.5294 | Buy Now |
DISTI #
7914957
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Verical | Trans MOSFET N-CH 100V 5.6A 3-Pin(2+Tab) D2PAK Min Qty: 21 Package Multiple: 1 | Americas - 1764 |
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$0.4887 / $0.6571 | Buy Now |
DISTI #
65063416
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Verical | Trans MOSFET N-CH 100V 5.6A 3-Pin(2+Tab) D2PAK Min Qty: 11 Package Multiple: 1 Date Code: 2220 | Americas - 360 |
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$0.5294 | Buy Now |
|
Quest Components | 712 |
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$2.4437 / $4.4430 | Buy Now | |
DISTI #
IRF510SPBF
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TTI | MOSFETs N-Chan 100V 5.6 Amp RoHS: Compliant pbFree: Pb-Free Min Qty: 50 Package Multiple: 50 Container: Tube |
Americas - 600 In Stock |
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$0.5750 / $0.6160 | Buy Now |
DISTI #
IRF510SPBF
|
TME | Transistor: N-MOSFET, unipolar, 100V, 4A, 43W, D2PAK,TO263 Min Qty: 1 | 259 |
|
$0.3880 / $0.8310 | Buy Now |
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IRF510SPBF
Vishay Intertechnologies
Buy Now
Datasheet
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Compare Parts:
IRF510SPBF
Vishay Intertechnologies
Power Field-Effect Transistor, 5.6A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, SMD-220, D2PAK-3
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
Part Package Code | D2PAK | |
Package Description | LEAD FREE, PLASTIC, SMD-220, D2PAK-3 | |
Pin Count | 4 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 19 Weeks | |
Samacsys Manufacturer | Vishay | |
Additional Feature | AVALANCHE RATED | |
Avalanche Energy Rating (Eas) | 100 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 100 V | |
Drain Current-Max (ID) | 5.6 A | |
Drain-source On Resistance-Max | 0.54 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-263AB | |
JESD-30 Code | R-PSSO-G2 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 43 W | |
Pulsed Drain Current-Max (IDM) | 20 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | MATTE TIN | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for IRF510SPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF510SPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Manufacturer | Composite Price | Description | Compare |
---|---|---|---|---|
IRF510STRRPBF | Vishay Intertechnologies | $0.4634 | Power Field-Effect Transistor, 5.6A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, SMD-220, D2PAK-3 | IRF510SPBF vs IRF510STRRPBF |
IRF510S | Vishay Intertechnologies | Check for Price | Power Field-Effect Transistor, 5.6A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN | IRF510SPBF vs IRF510S |
IRF510STRLPBF | Vishay Intertechnologies | Check for Price | Power Field-Effect Transistor, 5.6A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, SMD-220, D2PAK-3 | IRF510SPBF vs IRF510STRLPBF |
The maximum operating temperature range for the IRF510SPBF is -55°C to 175°C.
To ensure proper biasing, the gate-source voltage (Vgs) should be between 2V and 4V, and the drain-source voltage (Vds) should be within the recommended operating range.
The maximum current rating for the IRF510SPBF is 5.6A, but this can be affected by the operating temperature and other factors.
To protect the IRF510SPBF, use a voltage regulator or a zener diode to limit the voltage, and consider adding a current-sensing resistor and a fuse or a current limiter to prevent overcurrent.
Yes, the IRF510SPBF is suitable for high-frequency switching applications up to 1MHz, but be aware of the device's switching characteristics and ensure proper layout and decoupling to minimize ringing and EMI.