Part Details for IRF450 by Rochester Electronics LLC
Results Overview of IRF450 by Rochester Electronics LLC
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (3 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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IRF450 Information
IRF450 by Rochester Electronics LLC is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part Details for IRF450
IRF450 CAD Models
IRF450 Part Data Attributes
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IRF450
Rochester Electronics LLC
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Datasheet
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IRF450
Rochester Electronics LLC
Power Field-Effect Transistor, 12A I(D), 500V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, HERMETIC SEALED, MODIFIED TO-3, 2 PIN
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| Pbfree Code | No | |
| Rohs Code | No | |
| Part Life Cycle Code | Contact Manufacturer | |
| Ihs Manufacturer | ROCHESTER ELECTRONICS LLC | |
| Part Package Code | TO-3 | |
| Package Description | HERMETIC SEALED, MODIFIED TO-3, 2 PIN | |
| Pin Count | 2 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Avalanche Energy Rating (Eas) | 8 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 500 V | |
| Drain Current-Max (ID) | 12 A | |
| Drain-source On Resistance-Max | 0.5 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-204AA | |
| JESD-30 Code | O-MBFM-P2 | |
| JESD-609 Code | e0 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | METAL | |
| Package Shape | ROUND | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 48 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | TIN LEAD | |
| Terminal Form | PIN/PEG | |
| Terminal Position | BOTTOM | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IRF450
This table gives cross-reference parts and alternative options found for IRF450. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF450, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
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| IRF450 | Motorola Semiconductor Products | Check for Price | Power Field-Effect Transistor, 13A I(D), 500V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA | IRF450 vs IRF450 |
| IRF450PBF | International Rectifier | Check for Price | Power Field-Effect Transistor, 12A I(D), 500V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, HERMETIC SEALED, MODIFIED TO-3, 2 PIN | IRF450 vs IRF450PBF |
| IRF451 | International Rectifier | Check for Price | Power Field-Effect Transistor, 13A I(D), 450V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA | IRF450 vs IRF451 |
IRF450 Frequently Asked Questions (FAQ)
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The IRF450 can operate safely up to 150°C, but it's recommended to keep the junction temperature below 125°C for optimal performance and reliability.
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To ensure proper biasing, make sure to provide a gate-source voltage (Vgs) between 4V to 10V, and a drain-source voltage (Vds) within the recommended range of 0V to 500V. Also, ensure the gate drive is sufficient to minimize switching losses.
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The recommended gate resistor value for the IRF450 is typically between 10Ω to 100Ω, depending on the specific application and switching frequency. A higher gate resistor value can help reduce electromagnetic interference (EMI) but may increase switching losses.
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Yes, the IRF450 is suitable for high-frequency switching applications up to 1MHz. However, it's essential to consider the device's switching losses, gate drive requirements, and thermal management to ensure reliable operation.
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To protect the IRF450 from overvoltage and overcurrent conditions, consider using a voltage clamp or a transient voltage suppressor (TVS) diode, and a current sense resistor or a fuse in series with the drain terminal. Also, ensure the device is properly heatsinked to prevent thermal runaway.