Part Details for IRF450 by New Jersey Semiconductor Products Inc
Results Overview of IRF450 by New Jersey Semiconductor Products Inc
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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IRF450 Information
IRF450 by New Jersey Semiconductor Products Inc is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IRF450
| Part # | Distributor | Description | Stock | Price | Buy | |
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Quest Components | POWER FIELD-EFFECT TRANSISTOR, 12A I(D), 500V, 0.5OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-204AA | 1456 |
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$16.7000 / $21.7100 | Buy Now |
Part Details for IRF450
IRF450 CAD Models
IRF450 Part Data Attributes
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IRF450
New Jersey Semiconductor Products Inc
Buy Now
Datasheet
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IRF450
New Jersey Semiconductor Products Inc
Trans MOSFET N-CH 500V 13A 3-Pin(2+Tab) TO-3
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| Part Life Cycle Code | Active | |
| Ihs Manufacturer | NEW JERSEY SEMICONDUCTOR PRODUCTS INC | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| DS Breakdown Voltage-Min | 500 V | |
| Drain Current-Max (ID) | 13 A | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Operating Mode | ENHANCEMENT MODE | |
| Polarity/Channel Type | N-CHANNEL | |
| Transistor Element Material | SILICON |
IRF450 Frequently Asked Questions (FAQ)
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The maximum SOA for the IRF450 is typically defined by the manufacturer as a graph of drain-source voltage (Vds) vs drain current (Id) at a given temperature. It's essential to ensure the device operates within this area to prevent damage.
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The RθJC can be calculated using the formula: RθJC = (TJ - TC) / Pd, where TJ is the junction temperature, TC is the case temperature, and Pd is the power dissipation. The datasheet provides the thermal resistance values, but you need to calculate it based on your specific application.
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The recommended gate drive voltage for the IRF450 is typically between 10V to 15V, depending on the specific application and switching frequency. A higher gate drive voltage can reduce switching losses, but may also increase power consumption.
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To ensure the IRF450 is properly biased for linear operation, you need to ensure the gate-source voltage (Vgs) is within the recommended range (typically 2-4V) and the drain-source voltage (Vds) is within the specified range (typically 10-20V). You should also ensure the device is operated within the safe operating area (SOA).
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The maximum allowed drain-source voltage (Vds) for the IRF450 is 500V. Exceeding this voltage can cause permanent damage to the device.