Datasheets
IRF450 by:

Power Field-Effect Transistor, 12A I(D), 500V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, HERMETIC SEALED, MODIFIED TO-3, 2 PIN

Part Details for IRF450 by International Rectifier

Results Overview of IRF450 by International Rectifier

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IRF450 Information

IRF450 by International Rectifier is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for IRF450

Part # Distributor Description Stock Price Buy
DISTI # V36:1790_07434366
Arrow Electronics Trans MOSFET N-CH 500V 12A 3-Pin(2+Tab) TO-3 RoHS: Not Compliant Min Qty: 1 Package Multiple: 1 Lead time: 16 Weeks Date Code: 2305 Americas - 1411
  • 4 $24.1500
$24.1500 Buy Now
Bristol Electronics   14
RFQ
Quest Components POWER FIELD-EFFECT TRANSISTOR, 12A I(D), 500V, 0.5OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-204AA 2
  • 1 $25.0000
$25.0000 Buy Now
NexGen Digital   100
RFQ
ES Components IR IRF450 TELEDYNE SCD MIRF450*AIRKBRM * PRODUCT MUST BE CHROME, NICKEL, SILVER BACKED BARE DIE TELEDYNE SCD MIRF450*AIRKBRM * PRODUCT MUST BE CHROME, NICKEL, SILVER BACKED 7258800 100 in Stock
RFQ

Part Details for IRF450

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IRF450 Part Data Attributes

IRF450 International Rectifier
Buy Now Datasheet
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IRF450 International Rectifier Power Field-Effect Transistor, 12A I(D), 500V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, HERMETIC SEALED, MODIFIED TO-3, 2 PIN
Pbfree Code No
Rohs Code No
Part Life Cycle Code Transferred
Ihs Manufacturer INTERNATIONAL RECTIFIER CORP
Part Package Code TO-3
Package Description HERMETIC SEALED, MODIFIED TO-3, 2 PIN
Pin Count 2
Reach Compliance Code compliant
ECCN Code EAR99
HTS Code 8541.29.00.95
Avalanche Energy Rating (Eas) 8 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 500 V
Drain Current-Max (ID) 12 A
Drain-source On Resistance-Max 0.5 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-204AA
JESD-30 Code O-MBFM-P2
JESD-609 Code e0
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material METAL
Package Shape ROUND
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation Ambient-Max 150 W
Power Dissipation-Max (Abs) 150 W
Pulsed Drain Current-Max (IDM) 48 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish TIN LEAD
Terminal Form PIN/PEG
Terminal Position BOTTOM
Transistor Application SWITCHING
Transistor Element Material SILICON
Turn-off Time-Max (toff) 300 ns
Turn-on Time-Max (ton) 225 ns

Alternate Parts for IRF450

This table gives cross-reference parts and alternative options found for IRF450. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF450, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
JANTX2N6770 Motorola Semiconductor Products Check for Price Power Field-Effect Transistor, 12A I(D), 500V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA IRF450 vs JANTX2N6770
IRF450 Microsemi Corporation Check for Price Power Field-Effect Transistor, 13A I(D), 500V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3, TO-3, 2 PIN IRF450 vs IRF450
IRF450 STMicroelectronics Check for Price 13A, 500V, 0.4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3 IRF450 vs IRF450
IRF450 Vishay Siliconix Check for Price Power Field-Effect Transistor, 13A I(D), 500V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204, IRF450 vs IRF450
IRF450 Motorola Semiconductor Products Check for Price Power Field-Effect Transistor, 13A I(D), 500V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA IRF450 vs IRF450
2N6770PBF International Rectifier Check for Price Power Field-Effect Transistor, 12A I(D), 500V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204, HERMETIC SEALED, TO-204, 2 PIN IRF450 vs 2N6770PBF
2N6770 Vishay Siliconix Check for Price Power Field-Effect Transistor, 12A I(D), 500V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204, IRF450 vs 2N6770
IRF450E3 Microsemi Corporation Check for Price Power Field-Effect Transistor, 13A I(D), 500V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3, TO-3, 2 PIN IRF450 vs IRF450E3
IRF451 International Rectifier Check for Price Power Field-Effect Transistor, 13A I(D), 450V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA IRF450 vs IRF451
Part Number Manufacturer Composite Price Description Compare
IRF450PBF International Rectifier Check for Price Power Field-Effect Transistor, 12A I(D), 500V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, HERMETIC SEALED, MODIFIED TO-3, 2 PIN IRF450 vs IRF450PBF
SSH25N40A Samsung Semiconductor Check for Price Power Field-Effect Transistor, 25A I(D), 400V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN IRF450 vs SSH25N40A
SSS10N60A Samsung Semiconductor Check for Price Power Field-Effect Transistor, 5.1A I(D), 600V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220F, 3 PIN IRF450 vs SSS10N60A
FQP4N50 Rochester Electronics LLC Check for Price Power Field-Effect Transistor IRF450 vs FQP4N50
SSF8N90A Samsung Semiconductor Check for Price Power Field-Effect Transistor, 5.5A I(D), 900V, 1.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3PF, 3 PIN IRF450 vs SSF8N90A
FQB6N40C Fairchild Semiconductor Corporation Check for Price Power Field-Effect Transistor, 6A I(D), 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK-3 IRF450 vs FQB6N40C
SPD28N03 Siemens Check for Price Power Field-Effect Transistor, 28A I(D), 30V, 0.023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET IRF450 vs SPD28N03
SSP5N80A Samsung Semiconductor Check for Price Power Field-Effect Transistor, 5A I(D), 800V, 2.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN IRF450 vs SSP5N80A
IRFUC20PBF International Rectifier Check for Price Power Field-Effect Transistor, 2A I(D), 600V, 4.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA, LEAD FREE PACKAGE-3 IRF450 vs IRFUC20PBF
SSS3N80A Samsung Semiconductor Check for Price Power Field-Effect Transistor, 2A I(D), 800V, 4.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220F, 3 PIN IRF450 vs SSS3N80A

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