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Transistors / Power Field-Effect Transistors / IRF450
Datasheets
IRF450 by:

Power Field-Effect Transistor, 13A I(D), 500V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA

Part Details for IRF450 by Harris Semiconductor

Results Overview of IRF450 by Harris Semiconductor

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IRF450 Information

IRF450 by Harris Semiconductor is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for IRF450

Part # Distributor Description Stock Price Buy
Chip 1 Exchange INSTOCK 54
RFQ

Part Details for IRF450

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IRF450 Part Data Attributes

Parametric Data
IRF450 Harris Semiconductor
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IRF450 Harris Semiconductor Power Field-Effect Transistor, 13A I(D), 500V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA
Rohs Code No
Part Life Cycle Code Obsolete
Ihs Manufacturer HARRIS SEMICONDUCTOR
Reach Compliance Code unknown
ECCN Code EAR99
HTS Code 8541.29.00.95
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 500 V
Drain Current-Max (ID) 13 A
Drain-source On Resistance-Max 0.4 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-204AA
JESD-30 Code O-MBFM-P2
JESD-609 Code e0
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material METAL
Package Shape ROUND
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation Ambient-Max 125 W
Power Dissipation-Max (Abs) 150 W
Pulsed Drain Current-Max (IDM) 52 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish Tin/Lead (Sn/Pb)
Terminal Form PIN/PEG
Terminal Position BOTTOM
Transistor Application SWITCHING
Transistor Element Material SILICON
Turn-off Time-Max (toff) 160 ns
Turn-on Time-Max (ton) 93 ns

Alternate Parts for IRF450

This table gives cross-reference parts and alternative options found for IRF450. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF450, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
IRF451 TT Electronics Power and Hybrid / Semelab Limited Check for Price 13A, 450V, 0.4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3 IRF450 vs IRF451
2N6770PBF International Rectifier Check for Price Power Field-Effect Transistor, 12A I(D), 500V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204, HERMETIC SEALED, TO-204, 2 PIN IRF450 vs 2N6770PBF
IRF451 Advanced Microelectronic Products Inc Check for Price Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET IRF450 vs IRF451
JANTXV2N6770 Motorola Mobility LLC Check for Price 12A, 500V, 0.4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA IRF450 vs JANTXV2N6770
IRF450R1 TT Electronics Power and Hybrid / Semelab Limited Check for Price 13A, 500V, 0.4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA, HERMETIC SEALED, METAL, TO-3, 2 PIN IRF450 vs IRF450R1
JAN2N6770 Vishay Siliconix Check for Price Power Field-Effect Transistor, 12A I(D), 500V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, TO-3, 2 PIN IRF450 vs JAN2N6770
IRF451 Texas Instruments Check for Price TRANSISTOR,MOSFET,N-CHANNEL,450V V(BR)DSS,13A I(D),TO-3 IRF450 vs IRF451
IRF450 International Rectifier Check for Price Power Field-Effect Transistor, 12A I(D), 500V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, HERMETIC SEALED, MODIFIED TO-3, 2 PIN IRF450 vs IRF450
Part Number Manufacturer Composite Price Description Compare
IRF450 National Semiconductor Corporation Check for Price TRANSISTOR 13 A, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA, TO-204AA, 2 PIN, FET General Purpose Power IRF450 vs IRF450
JANTXV2N6770 Unitrode Corp (RETIRED) Check for Price Power Field-Effect Transistor, 12A I(D), 500V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, IRF450 vs JANTXV2N6770
IRF450 Infineon Technologies AG Check for Price Power Field-Effect Transistor, 12A I(D), 500V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, HERMETIC SEALED, MODIFIED TO-3, 2 PIN IRF450 vs IRF450
IRF450 Microsemi Corporation Check for Price Power Field-Effect Transistor, 13A I(D), 500V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3, TO-3, 2 PIN IRF450 vs IRF450
JANTX2N6770 Intersil Corporation Check for Price 12A, 500V, 0.4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA IRF450 vs JANTX2N6770
2N6770 Unitrode Corp (RETIRED) Check for Price Power Field-Effect Transistor, 12A I(D), 500V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, IRF450 vs 2N6770
IRF451 STMicroelectronics Check for Price 13A, 450V, 0.4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3 IRF450 vs IRF451
JANTX2N6770 Unitrode Corp (RETIRED) Check for Price Power Field-Effect Transistor, 12A I(D), 500V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, IRF450 vs JANTX2N6770
2N6770 Microsemi Corporation Check for Price Power Field-Effect Transistor, 12A I(D), 500V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE, TO-3, METAL CAN-2 IRF450 vs 2N6770
IRF450 Rochester Electronics LLC Check for Price Power Field-Effect Transistor, 12A I(D), 500V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, HERMETIC SEALED, MODIFIED TO-3, 2 PIN IRF450 vs IRF450

IRF450 Related Parts

IRF450 Frequently Asked Questions (FAQ)

  • The maximum safe operating area (SOA) for the IRF450 is not explicitly stated in the datasheet, but it can be estimated based on the device's voltage and current ratings. As a general rule, it's recommended to operate the device within the boundaries of the SOA curve provided in the datasheet to ensure reliable operation.

  • The junction-to-case thermal resistance (RθJC) for the IRF450 can be calculated using the formula: RθJC = (TJ - TC) / P, where TJ is the junction temperature, TC is the case temperature, and P is the power dissipation. The datasheet provides the thermal resistance values for the device, but the actual RθJC value may vary depending on the specific application and cooling conditions.

  • The recommended gate drive voltage for the IRF450 is typically between 10V to 15V, depending on the specific application and switching frequency. A higher gate drive voltage can improve the device's switching performance, but it may also increase the power consumption and EMI emissions.

  • Yes, the IRF450 can be used in high-frequency switching applications, but it's essential to consider the device's switching characteristics, such as the rise and fall times, and the gate charge. The datasheet provides information on the device's switching performance, and it's recommended to consult with the manufacturer's application notes and design guides for high-frequency switching applications.

  • To protect the IRF450 from overvoltage and overcurrent conditions, it's recommended to use a suitable voltage regulator, overvoltage protection (OVP) circuit, and overcurrent protection (OCP) circuit. Additionally, the device's voltage and current ratings should be carefully considered, and the application should be designed to operate within the device's safe operating area.

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