Part Details for IRF440 by Harris Semiconductor
Results Overview of IRF440 by Harris Semiconductor
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (7 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
IRF440 Information
IRF440 by Harris Semiconductor is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IRF440
| Part # | Distributor | Description | Stock | Price | Buy | |
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Quest Components | TRANSISTOR,MOSFET,N-CHANNEL,500V V(BR)DSS,8A I(D),TO-204AA | 9 |
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$23.4000 | Buy Now |
Part Details for IRF440
IRF440 CAD Models
IRF440 Part Data Attributes
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IRF440
Harris Semiconductor
Buy Now
Datasheet
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Compare Parts:
IRF440
Harris Semiconductor
Power Field-Effect Transistor, 8A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA
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| Rohs Code | No | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | HARRIS SEMICONDUCTOR | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 500 V | |
| Drain Current-Max (ID) | 8 A | |
| Drain-source On Resistance-Max | 0.85 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-204AA | |
| JESD-30 Code | O-MBFM-P2 | |
| JESD-609 Code | e0 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | METAL | |
| Package Shape | ROUND | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation Ambient-Max | 125 W | |
| Power Dissipation-Max (Abs) | 125 W | |
| Pulsed Drain Current-Max (IDM) | 32 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | TIN LEAD | |
| Terminal Form | PIN/PEG | |
| Terminal Position | BOTTOM | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Max (toff) | 104 ns | |
| Turn-on Time-Max (ton) | 56 ns |
Alternate Parts for IRF440
This table gives cross-reference parts and alternative options found for IRF440. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF440, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| IRF441 | National Semiconductor Corporation | Check for Price | TRANSISTOR,MOSFET,N-CHANNEL,450V V(BR)DSS,8A I(D),TO-3 | IRF440 vs IRF441 |
| IRF441 | Texas Instruments | Check for Price | TRANSISTOR,MOSFET,N-CHANNEL,450V V(BR)DSS,8A I(D),TO-3 | IRF440 vs IRF441 |
| IRF441 | International Rectifier | Check for Price | Power Field-Effect Transistor, 8A I(D), 450V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA | IRF440 vs IRF441 |
| IRF441 | FCI Semiconductor | Check for Price | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | IRF440 vs IRF441 |
| IRF441 | Intersil Corporation | Check for Price | TRANSISTOR,MOSFET,N-CHANNEL,450V V(BR)DSS,8A I(D),TO-3 | IRF440 vs IRF441 |
| IRF441 | New Jersey Semiconductor Products Inc | Check for Price | Trans MOSFET N-CH 450V 8A 3-Pin(2+Tab) TO-3 | IRF440 vs IRF441 |
| IRF441 | Motorola Semiconductor Products | Check for Price | Power Field-Effect Transistor, 8A I(D), 450V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA | IRF440 vs IRF441 |
IRF440 Frequently Asked Questions (FAQ)
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The maximum SOA for the IRF440 is not explicitly stated in the datasheet, but it can be estimated based on the device's thermal resistance and maximum junction temperature. A safe operating area can be determined by plotting the device's voltage and current ratings against each other, taking into account the thermal limitations.
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To ensure the IRF440 is fully turned on, the gate-source voltage (Vgs) should be at least 10V, and the gate drive circuit should be capable of sourcing sufficient current to charge the gate capacitance quickly. A gate resistor value of 10-20 ohms is recommended to prevent oscillations.
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The maximum allowed dv/dt for the IRF440 is not explicitly stated in the datasheet, but it is typically limited by the device's internal capacitance and the external circuit's impedance. A general rule of thumb is to limit dv/dt to 100-200 V/us to prevent voltage oscillations and ensure reliable operation.
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Yes, the IRF440 can be used in high-frequency switching applications, but the device's switching losses and parasitic capacitances should be carefully considered. The device's maximum switching frequency is limited by its internal capacitances and the external circuit's impedance.
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To protect the IRF440 from overvoltage and overcurrent, a voltage clamp or a zener diode can be used to limit the maximum voltage across the device. Additionally, a current sense resistor and a fuse can be used to detect and interrupt overcurrent conditions.