Part Details for IRF430 by Infineon Technologies AG
Results Overview of IRF430 by Infineon Technologies AG
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (6 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
IRF430 Information
IRF430 by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part Details for IRF430
IRF430 CAD Models
IRF430 Part Data Attributes
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IRF430
Infineon Technologies AG
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Datasheet
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IRF430
Infineon Technologies AG
Power Field-Effect Transistor, 4.5A I(D), 500V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, HERMETIC SEALED, MODIFIED TO-3, 2 PIN
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| Rohs Code | No | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | TO-3, 2 PIN | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 4 Weeks | |
| Samacsys Manufacturer | Infineon | |
| Avalanche Energy Rating (Eas) | 1.1 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 500 V | |
| Drain Current-Max (ID) | 4.5 A | |
| Drain-source On Resistance-Max | 1.8 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-204AA | |
| JESD-30 Code | O-MBFM-P2 | |
| JESD-609 Code | e0 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | METAL | |
| Package Shape | ROUND | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 75 W | |
| Pulsed Drain Current-Max (IDM) | 18 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | Tin/Lead (Sn/Pb) | |
| Terminal Form | PIN/PEG | |
| Terminal Position | BOTTOM | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IRF430
This table gives cross-reference parts and alternative options found for IRF430. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF430, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
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| IRF430R1 | TT Electronics Power and Hybrid / Semelab Limited | Check for Price | 4.5A, 20V, 1.8ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3 | IRF430 vs IRF430R1 |
| IRF430 | Intersil Corporation | Check for Price | 4.5A, 500V, 1.5ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA | IRF430 vs IRF430 |
| 2N6762 | Harris Semiconductor | Check for Price | Power Field-Effect Transistor, 5.5A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA | IRF430 vs 2N6762 |
| JANTX2N6762 | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 4.5A I(D), 500V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, HERMETIC SEALED, MODIFIED TO-3, 2 PIN | IRF430 vs JANTX2N6762 |
| JANTXV2N6762 | Unitrode Corp (RETIRED) | Check for Price | Power Field-Effect Transistor, 4.5A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, | IRF430 vs JANTXV2N6762 |
| IRF430 | TT Electronics Power and Hybrid / Semelab Limited | Check for Price | 4.5A, 20V, 1.8ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3 | IRF430 vs IRF430 |
IRF430 Frequently Asked Questions (FAQ)
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The maximum safe operating area (SOA) for the IRF430 is not explicitly stated in the datasheet, but it can be determined by consulting Infineon's application note AN-978, which provides guidelines for calculating the SOA for power MOSFETs.
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To ensure proper thermal management, it's essential to follow Infineon's thermal design guidelines, which include using a heat sink with a thermal resistance of ≤ 1 K/W, maintaining a maximum junction temperature of 150°C, and ensuring good thermal contact between the device and the heat sink.
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The recommended gate drive voltage for the IRF430 is between 10V and 15V, with a maximum gate-source voltage of ±20V. However, the optimal gate drive voltage may vary depending on the specific application and switching frequency.
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Yes, the IRF430 is suitable for high-frequency switching applications up to 1 MHz, but it's essential to consider the device's switching losses, gate charge, and parasitic capacitances to ensure reliable operation.
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The internal diode of the IRF430 can be handled by using a freewheeling diode or a snubber circuit to prevent voltage spikes and ringing during switching. The diode's reverse recovery characteristics should also be considered to minimize losses.