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Part Details for IRF420 by Infineon Technologies AG
Results Overview of IRF420 by Infineon Technologies AG
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (2 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Industrial Automation
Motor control systems
IRF420 Information
IRF420 by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part Details for IRF420
IRF420 CAD Models
IRF420 Part Data Attributes
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IRF420
Infineon Technologies AG
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Datasheet
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IRF420
Infineon Technologies AG
Power Field-Effect Transistor, 2.5A I(D), 500V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA,
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| Rohs Code | No | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Infineon | |
| Case Connection | DRAIN | |
| Configuration | SINGLE | |
| DS Breakdown Voltage-Min | 500 V | |
| Drain Current-Max (ID) | 2.5 A | |
| Drain-source On Resistance-Max | 3 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-204AA | |
| JESD-30 Code | O-MBFM-P2 | |
| JESD-609 Code | e0 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | METAL | |
| Package Shape | ROUND | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 50 W | |
| Pulsed Drain Current-Max (IDM) | 8 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | TIN LEAD | |
| Terminal Form | PIN/PEG | |
| Terminal Position | BOTTOM | |
| Transistor Element Material | SILICON |
Alternate Parts for IRF420
This table gives cross-reference parts and alternative options found for IRF420. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF420, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
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| IRF420 | International Rectifier | Check for Price | Power Field-Effect Transistor, 2.5A I(D), 500V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA | IRF420 vs IRF420 |
| IRF420 | Harris Semiconductor | Check for Price | Power Field-Effect Transistor, 2.5A I(D), 500V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA | IRF420 vs IRF420 |
IRF420 Frequently Asked Questions (FAQ)
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The maximum safe operating area (SOA) for the IRF420 is not explicitly stated in the datasheet, but it can be determined by consulting Infineon's application note AN2013-03, which provides SOA curves for the device. The SOA is typically limited by the device's thermal and voltage ratings.
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The junction-to-case thermal resistance (RthJC) for the IRF420 can be calculated using the thermal resistance values provided in the datasheet. RthJC is typically around 0.5-1.0 K/W for the IRF420, depending on the specific package and mounting conditions.
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The recommended gate drive voltage for the IRF420 is typically between 10-15V, depending on the specific application and switching frequency. A higher gate drive voltage can improve switching performance, but may also increase power consumption and EMI.
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Yes, the IRF420 is suitable for high-frequency switching applications up to several hundred kHz. However, the device's switching performance and losses should be carefully evaluated to ensure that it meets the specific application requirements.
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To ensure proper cooling of the IRF420, a heat sink with a sufficient thermal conductivity should be used, and the device should be mounted with a suitable thermal interface material (TIM). The heat sink should be designed to dissipate the maximum expected power losses, and the device's thermal ratings should not be exceeded.