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Transistors / Power Field-Effect Transistors / IRF3805STRLPBF
Datasheets
IRF3805STRLPBF by:

Power Field-Effect Transistor, 75A I(D), 55V, 0.0033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3

Part Details for IRF3805STRLPBF by Infineon Technologies AG

Results Overview of IRF3805STRLPBF by Infineon Technologies AG

Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.

IRF3805STRLPBF Information

IRF3805STRLPBF by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for IRF3805STRLPBF

Part # Distributor Description Stock Price Buy
DISTI # IRF3805STRLPBFCT-ND
DigiKey MOSFET N-CH 55V 75A D2PAK Min Qty: 1 Lead time: 12 Weeks Container: Digi-Reel®, Tape & Reel (TR), Cut Tape (CT) 3180
In Stock
  • 1 $4.6200
  • 10 $3.5930
  • 100 $2.8812
  • 800 $2.1952
$2.1952 / $4.6200 Buy Now
DISTI # IRF3805STRLPBF
Avnet Americas Trans MOSFET N-CH 55V 210A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel (Alt: IRF3805STRLPBF) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Lead time: 12 Weeks, 0 Days Container: Reel 800
  • 800 $1.6792
$1.6792 Buy Now
DISTI # 942-IRF3805STRLPBF
Mouser Electronics MOSFETs MOSFT 55V 220A 3.3mOhm 190nC RoHS: Compliant 1903
  • 1 $4.5700
  • 10 $3.5700
  • 100 $2.8900
  • 500 $2.7400
  • 800 $2.1400
$2.1400 / $4.5700 Buy Now
DISTI # E02:0323_00176042
Arrow Electronics Trans MOSFET N-CH Si 55V 210A 3-Pin(2+Tab) D2PAK T/R Min Qty: 800 Package Multiple: 800 Lead time: 12 Weeks Date Code: 2306 Europe - 800
  • 800 $0.6941
$0.6941 Buy Now
Future Electronics Single N-Channel 55 V 3.3 mOhm 290 nC HEXFET® Power Mosfet - D2PAK RoHS: Compliant pbFree: Yes Min Qty: 800 Package Multiple: 800 Lead time: 12 Weeks Container: Reel 800
Reel
  • 800 $1.8500
  • 1,600 $1.8300
$1.8300 / $1.8500 Buy Now
Future Electronics Single N-Channel 55 V 3.3 mOhm 290 nC HEXFET® Power Mosfet - D2PAK RoHS: Compliant pbFree: Yes Min Qty: 800 Package Multiple: 800 Lead time: 12 Weeks Container: Reel 0
Reel
  • 800 $1.8500
  • 1,600 $1.8300
$1.8300 / $1.8500 Buy Now
DISTI # 67616816
Verical Trans MOSFET N-CH Si 55V 210A 3-Pin(2+Tab) D2PAK T/R Min Qty: 800 Package Multiple: 800 Date Code: 2306 Americas - 800
  • 800 $0.6986
$0.6986 Buy Now
DISTI # 75724127
Verical Trans MOSFET N-CH Si 55V 210A 3-Pin(2+Tab) D2PAK T/R Min Qty: 15 Package Multiple: 1 Date Code: 2318 Americas - 780
  • 15 $4.4900
  • 50 $3.4200
  • 100 $3.0400
  • 200 $2.5000
  • 500 $2.3700
$2.3700 / $4.4900 Buy Now
Bristol Electronics   204
RFQ
Quest Components POWER FIELD-EFFECT TRANSISTOR, 75A I(D), 55V, 0.0033OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-263AB 163
  • 1 $5.1120
  • 21 $3.4080
  • 74 $3.1524
$3.1524 / $5.1120 Buy Now
Quest Components POWER FIELD-EFFECT TRANSISTOR, 75A I(D), 55V, 0.0033OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-263AB 40
  • 1 $5.1120
  • 7 $3.7488
  • 21 $3.4080
$3.4080 / $5.1120 Buy Now
Future Electronics Single N-Channel 55 V 3.3 mOhm 290 nC HEXFET� Power Mosfet - D2PAK Min Qty: 800 Package Multiple: 800 800
null
  • 800 $1.8700
  • 1,600 $1.8400
$1.8400 / $1.8700 Buy Now
Future Electronics Single N-Channel 55 V 3.3 mOhm 290 nC HEXFET� Power Mosfet - D2PAK Min Qty: 800 Package Multiple: 800 12000
null
  • 800 $1.5800
  • 1,600 $1.5700
  • 2,400 $1.5500
$1.5500 / $1.5800 Buy Now
DISTI # IRF3805STRLPBF
IBS Electronics SINGLE N-CHANNEL 55 V 3.3 MOHM 290 NC HEXFET&#xAE, POWER MOSFET - D2PAK Min Qty: 800 Package Multiple: 1 800
  • 800 $2.0540
  • 1,600 $2.0410
  • 2,400 $2.0150
$2.0150 / $2.0540 Buy Now
DISTI # IRF3805STRLPBF
Chip One Stop Semiconductors RoHS: Compliant Min Qty: 1 Lead time: 0 Weeks, 1 Days Container: Cut Tape 780
  • 1 $4.4900
  • 10 $3.4200
  • 50 $3.0400
  • 100 $2.5000
  • 200 $2.3700
  • 500 $2.2100
  • 800 $1.9600
  • 1,600 $1.8400
  • 6,400 $1.8200
$1.8200 / $4.4900 Buy Now
DISTI # SP001564856
EBV Elektronik Trans MOSFET NCH 55V 210A 3Pin2Tab D2PAK TR (Alt: SP001564856) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Lead time: 13 Weeks, 0 Days EBV - 0
Buy Now
LCSC 55V 75A 3.3m10V75A 300W 4V 1 N-channel D2PAK MOSFETs ROHS 1
  • 1 $5.0572
  • 10 $4.9501
  • 30 $4.8791
  • 100 $4.8082
$4.8082 / $5.0572 Buy Now

Part Details for IRF3805STRLPBF

IRF3805STRLPBF Part Data Attributes

Parametric Data
IRF3805STRLPBF Infineon Technologies AG
Buy Now Datasheet
Compare Parts:
IRF3805STRLPBF Infineon Technologies AG Power Field-Effect Transistor, 75A I(D), 55V, 0.0033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3
Rohs Code Yes
Part Life Cycle Code Not Recommended
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Reach Compliance Code not_compliant
ECCN Code EAR99
Factory Lead Time 12 Weeks
Samacsys Manufacturer Infineon
Avalanche Energy Rating (Eas) 650 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 55 V
Drain Current-Max (ID) 75 A
Drain-source On Resistance-Max 0.0033 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 630 pF
JEDEC-95 Code TO-263AB
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 300 W
Pulsed Drain Current-Max (IDM) 890 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IRF3805STRLPBF

This table gives cross-reference parts and alternative options found for IRF3805STRLPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF3805STRLPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
IRF3805STRRPBF International Rectifier Check for Price Power Field-Effect Transistor, 75A I(D), 55V, 0.0033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3 IRF3805STRLPBF vs IRF3805STRRPBF
Part Number Manufacturer Composite Price Description Compare
IRF3805SPBF Infineon Technologies AG $1.5042 Power Field-Effect Transistor, 75A I(D), 55V, 0.0033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3 IRF3805STRLPBF vs IRF3805SPBF
IRF3805STRLPBF International Rectifier Check for Price Power Field-Effect Transistor, 75A I(D), 55V, 0.0033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3 IRF3805STRLPBF vs IRF3805STRLPBF
AUIRF3805STRL Infineon Technologies AG Check for Price Power Field-Effect Transistor, 160A I(D), 55V, 0.0033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, PLASTIC, D2PAK-3 IRF3805STRLPBF vs AUIRF3805STRL
IRF3805S Infineon Technologies AG Check for Price Power Field-Effect Transistor, 75A I(D), 55V, 0.0033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, D2PAK-3 IRF3805STRLPBF vs IRF3805S
AUIRF3805S International Rectifier Check for Price Power Field-Effect Transistor, 160A I(D), 55V, 0.0033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, PLASTIC, D2PAK-3 IRF3805STRLPBF vs AUIRF3805S
IRF3805SPBF International Rectifier Check for Price Power Field-Effect Transistor, 75A I(D), 55V, 0.0033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3 IRF3805STRLPBF vs IRF3805SPBF
IRF3805STRR Infineon Technologies AG Check for Price Power Field-Effect Transistor, 75A I(D), 55V, 0.0033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, D2PAK-3 IRF3805STRLPBF vs IRF3805STRR
AUIRF3805STRL International Rectifier Check for Price Power Field-Effect Transistor, 160A I(D), 55V, 0.0033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, PLASTIC, D2PAK-3 IRF3805STRLPBF vs AUIRF3805STRL
IRF3805LPBF International Rectifier Check for Price Power Field-Effect Transistor, 75A I(D), 55V, 0.0033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, LEAD FREE, PLASTIC, TO-262, 3 PIN IRF3805STRLPBF vs IRF3805LPBF
IRF3805S International Rectifier Check for Price Power Field-Effect Transistor, 75A I(D), 55V, 0.0033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, D2PAK-3 IRF3805STRLPBF vs IRF3805S

IRF3805STRLPBF Related Parts

IRF3805STRLPBF Frequently Asked Questions (FAQ)

  • The maximum operating temperature range for the IRF3805STRLPBF is -55°C to 175°C.

  • To ensure reliability, it's essential to follow proper thermal management practices, such as providing adequate heat sinking, using thermal interface materials, and ensuring good airflow around the device.

  • The recommended gate drive voltage for the IRF3805STRLPBF is between 10V and 15V, with a maximum gate-source voltage of ±20V.

  • To protect the IRF3805STRLPBF from ESD, handle the device with anti-static wrist straps, mats, or bags, and ensure that the device is stored in a static-safe environment.

  • The maximum allowable power dissipation for the IRF3805STRLPBF is 150W, but this value can be derated based on the operating temperature and other factors.

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