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Transistors / Power Field-Effect Transistors / IRF3709ZSTRRPBF
Datasheets
IRF3709ZSTRRPBF by:

Power Field-Effect Transistor, 42A I(D), 30V, 0.0063ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, D2PAK-3

Part Details for IRF3709ZSTRRPBF by Infineon Technologies AG

Results Overview of IRF3709ZSTRRPBF by Infineon Technologies AG

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Applications Consumer Electronics Energy and Power Systems Renewable Energy

IRF3709ZSTRRPBF Information

IRF3709ZSTRRPBF by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for IRF3709ZSTRRPBF

Part # Distributor Description Stock Price Buy
DISTI # IRF3709ZSTRRPBF
Avnet Americas Trans MOSFET N-CH 30V 87A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel (Alt: IRF3709ZSTRRPBF) RoHS: Compliant Min Qty: 3200 Package Multiple: 800 Lead time: 111 Weeks, 0 Days Container: Reel 0
RFQ
DISTI # 85989701
Verical Trans MOSFET N-CH 30V 87A 3-Pin(2+Tab) D2PAK T/R Min Qty: 331 Package Multiple: 1 Date Code: 2201 Americas - 2424
  • 331 $1.1345
$1.1345 Buy Now
DISTI # 75724083
Verical Trans MOSFET N-CH 30V 87A 3-Pin(2+Tab) D2PAK T/R Min Qty: 41 Package Multiple: 1 Date Code: 2232 Americas - 1600
  • 41 $2.2600
  • 50 $2.0300
  • 100 $1.8400
  • 200 $1.4800
  • 500 $1.3800
  • 1,000 $1.2400
$1.2400 / $2.2600 Buy Now
DISTI # 85989129
Verical Trans MOSFET N-CH 30V 87A 3-Pin(2+Tab) D2PAK T/R Min Qty: 331 Package Multiple: 1 Date Code: 2401 Americas - 800
  • 331 $1.1345
$1.1345 Buy Now
DISTI # 86916581
Verical Trans MOSFET N-CH 30V 87A 3-Pin(2+Tab) D2PAK T/R Min Qty: 800 Package Multiple: 800 Date Code: 2445 Americas - 800
  • 800 $1.0664
  • 2,400 $0.6692
$0.6692 / $1.0664 Buy Now
DISTI # 88042791
Verical Trans MOSFET N-CH 30V 87A 3-Pin(2+Tab) D2PAK T/R Min Qty: 331 Package Multiple: 1 Date Code: 2001 Americas - 340
  • 331 $1.1345
$1.1345 Buy Now
Rochester Electronics IRF3709ZSTRRPBF - TRENCH <= 40V RoHS: Compliant Status: End of Life / Last Time Buy Min Qty: 1 3564
  • 100 $0.9076
  • 500 $0.8168
  • 1,000 $0.7533
  • 10,000 $0.6716
  • 100,000 $0.5627
$0.5627 / $0.9076 Buy Now
DISTI # IRF3709ZSTRRPBF
Chip One Stop Semiconductors RoHS: Compliant Min Qty: 1 Lead time: 0 Weeks, 1 Days Container: Cut Tape 1600
  • 1 $2.2600
  • 10 $2.0300
  • 50 $1.8400
  • 100 $1.4800
  • 200 $1.3800
  • 500 $1.2400
  • 1,000 $1.2200
  • 2,000 $1.1000
  • 3,200 $1.0900
  • 6,400 $1.0700
$1.0700 / $2.2600 Buy Now
DISTI # SP001563134
EBV Elektronik Trans MOSFET NCH 30V 87A 3Pin2Tab D2PAK TR (Alt: SP001563134) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Lead time: 143 Weeks, 0 Days EBV - 0
Buy Now

Part Details for IRF3709ZSTRRPBF

IRF3709ZSTRRPBF CAD Models

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IRF3709ZSTRRPBF Part Data Attributes

Parametric Data
IRF3709ZSTRRPBF Infineon Technologies AG
Buy Now Datasheet
Compare Parts:
IRF3709ZSTRRPBF Infineon Technologies AG Power Field-Effect Transistor, 42A I(D), 30V, 0.0063ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, D2PAK-3
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Reach Compliance Code not_compliant
ECCN Code EAR99
Factory Lead Time 111 Weeks
Samacsys Manufacturer Infineon
Avalanche Energy Rating (Eas) 60 mJ
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V
Drain Current-Max (ID) 87 A
Drain-source On Resistance-Max 0.0063 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 220 pF
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 79 W
Pulsed Drain Current-Max (IDM) 350 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Element Material SILICON

Alternate Parts for IRF3709ZSTRRPBF

This table gives cross-reference parts and alternative options found for IRF3709ZSTRRPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF3709ZSTRRPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
IRF3709ZS Infineon Technologies AG Check for Price Power Field-Effect Transistor, 42A I(D), 30V, 0.0063ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK-3 IRF3709ZSTRRPBF vs IRF3709ZS
IRF3709ZSTRL International Rectifier Check for Price Power Field-Effect Transistor, 42A I(D), 30V, 0.0063ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK-3 IRF3709ZSTRRPBF vs IRF3709ZSTRL
IRF3709ZS International Rectifier Check for Price Power Field-Effect Transistor, 42A I(D), 30V, 0.0063ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK-3 IRF3709ZSTRRPBF vs IRF3709ZS
IRF3709ZSPBF International Rectifier Check for Price Power Field-Effect Transistor, 42A I(D), 30V, 0.0063ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, D2PAK-3 IRF3709ZSTRRPBF vs IRF3709ZSPBF
IRF3709ZSTRR International Rectifier Check for Price Power Field-Effect Transistor, 42A I(D), 30V, 0.0063ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK-3 IRF3709ZSTRRPBF vs IRF3709ZSTRR
IRF3709ZSTRLPBF International Rectifier Check for Price Power Field-Effect Transistor, 42A I(D), 30V, 0.0063ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, D2PAK-3 IRF3709ZSTRRPBF vs IRF3709ZSTRLPBF

IRF3709ZSTRRPBF Related Parts

IRF3709ZSTRRPBF Frequently Asked Questions (FAQ)

  • The maximum operating temperature range for the IRF3709ZSTRRPBF is -55°C to 175°C.

  • To ensure reliability, it's essential to follow proper thermal management practices, such as providing adequate heat sinking, using thermal interface materials, and ensuring good airflow around the device.

  • The recommended gate drive voltage for the IRF3709ZSTRRPBF is between 10V and 15V, with a maximum gate-source voltage of ±20V.

  • To protect the IRF3709ZSTRRPBF from ESD, handle the device with anti-static wrist straps, mats, or bags, and ensure that the device is stored in a static-safe environment.

  • The maximum allowable current for the IRF3709ZSTRRPBF is 370A, with a maximum pulsed current of 740A.

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