Part Details for IRF3205SPBF by International Rectifier
Results Overview of IRF3205SPBF by International Rectifier
- Distributor Offerings: (4 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
IRF3205SPBF Information
IRF3205SPBF by International Rectifier is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IRF3205SPBF
| Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | 600 |
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RFQ | ||
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Quest Components | 75A, 55V, 0.008OHM, N-CHANNEL, SI, POWER, MOSFET, TO-263AB | 480 |
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$0.8146 / $2.0365 | Buy Now |
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Quest Components | 75A, 55V, 0.008OHM, N-CHANNEL, SI, POWER, MOSFET, TO-263AB | 2 |
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$1.2219 | Buy Now |
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Component Electronics, Inc | IN STOCK SHIP TODAY | 585 |
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$5.0000 / $7.6900 | Buy Now |
Part Details for IRF3205SPBF
IRF3205SPBF CAD Models
IRF3205SPBF Part Data Attributes
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IRF3205SPBF
International Rectifier
Buy Now
Datasheet
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IRF3205SPBF
International Rectifier
Power Field-Effect Transistor, 75A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | INTERNATIONAL RECTIFIER CORP | |
| Part Package Code | D2PAK | |
| Package Description | D2PAK-3/2 | |
| Pin Count | 3 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Additional Feature | AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE | |
| Avalanche Energy Rating (Eas) | 264 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 55 V | |
| Drain Current-Max (ID) | 75 A | |
| Drain-source On Resistance-Max | 0.008 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 211 pF | |
| JEDEC-95 Code | TO-263AB | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 200 W | |
| Pulsed Drain Current-Max (IDM) | 390 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) - with Nickel (Ni) barrier | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Max (toff) | 115 ns | |
| Turn-on Time-Max (ton) | 115 ns |
IRF3205SPBF Frequently Asked Questions (FAQ)
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The maximum operating temperature range for the IRF3205SPBF is -55°C to 175°C.
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Yes, the IRF3205SPBF is suitable for high-frequency switching applications up to 1 MHz, but it's essential to consider the device's switching losses and thermal management.
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To ensure proper cooling, provide a heat sink with a thermal resistance of less than 1°C/W, and ensure good thermal contact between the device and the heat sink. Also, consider the PCB layout and airflow around the device.
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The recommended gate drive voltage for the IRF3205SPBF is between 10V and 15V, with a maximum gate-source voltage of ±20V.
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Yes, you can use multiple IRF3205SPBF devices in parallel to increase current handling, but ensure that each device has its own gate drive and that the devices are properly matched to minimize current imbalance.