Part Details for IRF2807SPBF by International Rectifier
Results Overview of IRF2807SPBF by International Rectifier
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (1 replacement)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (4 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
IRF2807SPBF Information
IRF2807SPBF by International Rectifier is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part Details for IRF2807SPBF
IRF2807SPBF CAD Models
IRF2807SPBF Part Data Attributes
|
|
IRF2807SPBF
International Rectifier
Buy Now
Datasheet
|
Compare Parts:
IRF2807SPBF
International Rectifier
Power Field-Effect Transistor, 75A I(D), 75V, 0.013ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3
|
| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | INTERNATIONAL RECTIFIER CORP | |
| Package Description | LEAD FREE, PLASTIC, D2PAK-3 | |
| Pin Count | 3 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Additional Feature | AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE | |
| Avalanche Energy Rating (Eas) | 340 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 75 V | |
| Drain Current-Max (ID) | 75 A | |
| Drain-source On Resistance-Max | 0.013 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation Ambient-Max | 150 W | |
| Power Dissipation-Max (Abs) | 230 W | |
| Pulsed Drain Current-Max (IDM) | 280 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) - with Nickel (Ni) barrier | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IRF2807SPBF
This table gives cross-reference parts and alternative options found for IRF2807SPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF2807SPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| IRF2807STRL | International Rectifier | Check for Price | Power Field-Effect Transistor, 75A I(D), 75V, 0.013ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, D2PAK-3 | IRF2807SPBF vs IRF2807STRL |
IRF2807SPBF Frequently Asked Questions (FAQ)
-
The maximum operating temperature range for the IRF2807SPBF is -55°C to 175°C, as specified in the datasheet. However, it's recommended to derate the power handling capability at higher temperatures to ensure reliable operation.
-
To ensure proper biasing, make sure to provide a stable gate-source voltage (Vgs) within the recommended range of 2V to 5V. Also, ensure the drain-source voltage (Vds) is within the maximum rating of 75V, and the drain current (Id) is within the maximum rating of 82A.
-
For optimal thermal management, use a PCB with a thick copper layer (at least 2 oz) and ensure good thermal conductivity between the device and the heat sink. Also, follow the recommended land pattern and keep the leads as short as possible to minimize parasitic inductance.
-
Yes, the IRF2807SPBF is suitable for high-frequency switching applications up to 1 MHz. However, be aware of the device's switching characteristics, such as rise and fall times, and ensure proper snubber circuits are used to minimize ringing and EMI.
-
Use a suitable overvoltage protection circuit, such as a zener diode or a transient voltage suppressor (TVS), to clamp the voltage across the device. Also, implement overcurrent protection using a current sense resistor and a comparator or a dedicated overcurrent protection IC.