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Power Field-Effect Transistor, 75A I(D), 40V, 0.0023ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-220AB, LEAD FREE, PLASTIC PACKAGE-3
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
IRF2804PBF by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
8657491
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Farnell | MOSFET, N, 40V, 280A, TO-220 RoHS: Compliant Min Qty: 1 Lead time: 13 Weeks, 1 Days Container: Each | 1940 |
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$1.1502 / $2.6657 | Buy Now |
DISTI #
1564099
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Farnell | MOSFET, N TO-220 TUBE 50 RoHS: Compliant Min Qty: 1 Lead time: 11 Weeks, 1 Days Container: Tube | 0 |
|
$113.2256 / $125.7277 | Buy Now |
DISTI #
IRF2804PBF-ND
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DigiKey | MOSFET N-CH 40V 75A TO220AB Min Qty: 1 Lead time: 12 Weeks Container: Tube |
4674 In Stock |
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$1.0082 / $2.5200 | Buy Now |
DISTI #
IRF2804PBF
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Avnet Americas | Trans MOSFET N-CH 40V 280A 3-Pin(3+Tab) TO-220 - Rail/Tube (Alt: IRF2804PBF) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 12 Weeks, 0 Days Container: Tube | 0 |
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$0.7714 / $0.8114 | Buy Now |
DISTI #
942-IRF2804PBF
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Mouser Electronics | MOSFETs MOSFT 40V 280A 2.3mOhm 160nC Qg RoHS: Compliant | 1430 |
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$1.0000 / $2.3800 | Buy Now |
DISTI #
E02:0323_00010697
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Arrow Electronics | Trans MOSFET N-CH Si 40V 270A 3-Pin(3+Tab) TO-220AB Tube Min Qty: 1 Package Multiple: 1 Lead time: 12 Weeks Date Code: 2301 | Europe - 3563 |
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$0.7841 / $1.0087 | Buy Now |
DISTI #
V99:2348_13890709
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Arrow Electronics | Trans MOSFET N-CH Si 40V 270A 3-Pin(3+Tab) TO-220AB Tube Min Qty: 1 Package Multiple: 1 Lead time: 12 Weeks Date Code: 2226 | Americas - 943 |
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$0.9328 / $1.5064 | Buy Now |
DISTI #
70016946
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RS | MOSFET, Power, N-Ch, VDSS 40V, RDS(ON) 1.8 Milliohms, ID 280A, TO-220AB, PD 330W,-55C Min Qty: 1 Package Multiple: 1 Container: Bulk | 0 |
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$2.9200 / $3.4300 | RFQ |
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Future Electronics | Single N-Channel 40 V 2.3 mOhm 240 nC HEXFET® Power Mosfet - TO-220-3 RoHS: Compliant pbFree: Yes Min Qty: 50 Package Multiple: 50 Lead time: 12 Weeks Container: Tube | 350Tube |
|
$0.8950 / $0.9900 | Buy Now |
|
Future Electronics | Single N-Channel 40 V 2.3 mOhm 240 nC HEXFET® Power Mosfet - TO-220-3 RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 50 Lead time: 12 Weeks Container: Tube | 0Tube |
|
$0.8950 / $1.0300 | Buy Now |
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IRF2804PBF
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IRF2804PBF
Infineon Technologies AG
Power Field-Effect Transistor, 75A I(D), 40V, 0.0023ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-220AB, LEAD FREE, PLASTIC PACKAGE-3
|
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 12 Weeks | |
Samacsys Manufacturer | Infineon | |
Additional Feature | AVALANCHE RATED, ULTRA-LOW RESISTANCE | |
Avalanche Energy Rating (Eas) | 540 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 40 V | |
Drain Current-Max (ID) | 75 A | |
Drain-source On Resistance-Max | 0.0023 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-220AB | |
JESD-30 Code | R-PSFM-T3 | |
JESD-609 Code | e3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 330 W | |
Pulsed Drain Current-Max (IDM) | 1080 A | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Finish | Matte Tin (Sn) - with Nickel (Ni) barrier | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | 10 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for IRF2804PBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF2804PBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Manufacturer | Composite Price | Description | Compare |
---|---|---|---|---|
AUIRF2804 | International Rectifier | Check for Price | Power Field-Effect Transistor, 270A I(D), 40V, 0.0023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT PACKAGE-3 | IRF2804PBF vs AUIRF2804 |
The maximum operating temperature range for the IRF2804PBF is -55°C to 175°C.
To ensure reliability, it's essential to follow proper thermal management practices, such as providing adequate heat sinking, using thermal interface materials, and monitoring junction temperature.
The recommended gate drive voltage for the IRF2804PBF is between 10V and 15V, with a maximum gate-source voltage of ±20V.
To protect the IRF2804PBF from ESD, handle the device by the body, use an anti-static wrist strap or mat, and store the device in anti-static packaging.
The maximum allowable current for the IRF2804PBF is 280A, with a maximum pulsed current of 560A.