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Power Field-Effect Transistor, 130A I(D), 75V, 0.0078ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-220AB, PLASTIC, TO-220AB, 3 PIN
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IRF1407PBF by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
63J7199
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Newark | N Channel Mosfet, 75V, 130A, To-220Ab, Channel Type:N Channel, Drain Source Voltage Vds:75V, Continuous Drain Current Id:130A, Transistor Mounting:Through Hole, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:4V, Msl:- Rohs Compliant: Yes |Infineon IRF1407PBF RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk | 2132 |
|
$1.0800 / $2.7100 | Buy Now |
DISTI #
IRF1407PBF-ND
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DigiKey | MOSFET N-CH 75V 130A TO220AB Min Qty: 1 Lead time: 10 Weeks Container: Tube |
11003 In Stock |
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$0.8695 / $2.6600 | Buy Now |
DISTI #
IRF1407PBF
|
Avnet Americas | Trans MOSFET N-CH 80V 130A 3-Pin(3+Tab) TO-220AB - Rail/Tube (Alt: IRF1407PBF) RoHS: Compliant Min Qty: 50 Package Multiple: 1 Lead time: 10 Weeks, 0 Days Container: Tube | 726 |
|
$0.7259 / $0.8869 | Buy Now |
DISTI #
63J7199
|
Avnet Americas | Trans MOSFET N-CH 80V 130A 3-Pin(3+Tab) TO-220AB - Bulk (Alt: 63J7199) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 17 Weeks, 1 Days Container: Bulk | 295 Partner Stock |
|
$1.1400 / $2.7700 | Buy Now |
DISTI #
942-IRF1407PBF
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Mouser Electronics | MOSFETs MOSFT 75V 130A 7.8mOhm 160nC RoHS: Compliant | 1246 |
|
$0.8690 / $2.6600 | Buy Now |
DISTI #
E02:0323_00175968
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Arrow Electronics | Trans MOSFET N-CH Si 75V 130A 3-Pin(3+Tab) TO-220AB Tube Min Qty: 1 Package Multiple: 1 Lead time: 10 Weeks Date Code: 2245 | Europe - 2700 |
|
$0.7301 / $1.0740 | Buy Now |
DISTI #
87324367
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Verical | Trans MOSFET N-CH Si 75V 130A 3-Pin(3+Tab) TO-220AB Tube Min Qty: 255 Package Multiple: 1 Date Code: 2201 | Americas - 11100 |
|
$1.4750 | Buy Now |
DISTI #
85989263
|
Verical | Trans MOSFET N-CH Si 75V 130A 3-Pin(3+Tab) TO-220AB Tube Min Qty: 255 Package Multiple: 1 Date Code: 2101 | Americas - 3582 |
|
$1.4750 | Buy Now |
DISTI #
64965043
|
Verical | Trans MOSFET N-CH Si 75V 130A 3-Pin(3+Tab) TO-220AB Tube Min Qty: 8 Package Multiple: 1 Date Code: 2245 | Americas - 2696 |
|
$1.2638 | Buy Now |
DISTI #
87324395
|
Verical | Trans MOSFET N-CH Si 75V 130A 3-Pin(3+Tab) TO-220AB Tube Min Qty: 255 Package Multiple: 1 | Americas - 1285 |
|
$1.4750 | Buy Now |
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IRF1407PBF
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IRF1407PBF
Infineon Technologies AG
Power Field-Effect Transistor, 130A I(D), 75V, 0.0078ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-220AB, PLASTIC, TO-220AB, 3 PIN
|
Rohs Code | Yes | |
Part Life Cycle Code | Not Recommended | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 17 Weeks, 1 Day | |
Samacsys Manufacturer | Infineon | |
Additional Feature | AVALANCHE RATED, ULTRA-LOW RESISTANCE | |
Avalanche Energy Rating (Eas) | 390 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 75 V | |
Drain Current-Max (ID) | 130 A | |
Drain-source On Resistance-Max | 0.0078 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-220AB | |
JESD-30 Code | R-PSFM-T3 | |
JESD-609 Code | e3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 330 W | |
Pulsed Drain Current-Max (IDM) | 520 A | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Finish | Tin (Sn) | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for IRF1407PBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF1407PBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Manufacturer | Composite Price | Description | Compare |
---|---|---|---|---|
IRF1407 | International Rectifier | Check for Price | Power Field-Effect Transistor, 130A I(D), 75V, 0.0078ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN | IRF1407PBF vs IRF1407 |
IRF1407PBF | International Rectifier | Check for Price | Power Field-Effect Transistor, 130A I(D), 75V, 0.0078ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, PLASTIC, TO-220AB, 3 PIN | IRF1407PBF vs IRF1407PBF |
The maximum operating temperature range for the IRF1407PBF is -55°C to 175°C.
To ensure reliability, follow proper thermal management, use a suitable heat sink, and ensure the device is operated within its specified voltage and current ratings.
The recommended gate drive voltage for the IRF1407PBF is between 10V and 15V, with a maximum gate-source voltage of ±20V.
Yes, the IRF1407PBF is suitable for high-frequency switching applications, but ensure that the device is operated within its specified frequency range and that proper thermal management is implemented.
Handle the device with proper ESD precautions, such as using an ESD wrist strap or mat, and ensure that the device is stored in an ESD-protected environment.