Datasheets
IRF1407PBF by:

Power Field-Effect Transistor, 130A I(D), 75V, 0.0078ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-220AB, PLASTIC, TO-220AB, 3 PIN

Part Details for IRF1407PBF by Infineon Technologies AG

Results Overview of IRF1407PBF by Infineon Technologies AG

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Applications Consumer Electronics Energy and Power Systems Renewable Energy Automotive

IRF1407PBF Information

IRF1407PBF by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for IRF1407PBF

Part # Distributor Description Stock Price Buy
DISTI # 63J7199
Newark N Channel Mosfet, 75V, 130A, To-220Ab, Channel Type:N Channel, Drain Source Voltage Vds:75V, Continuous Drain Current Id:130A, Transistor Mounting:Through Hole, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:4V, Msl:- Rohs Compliant: Yes |Infineon IRF1407PBF RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk 2132
  • 1 $2.7100
  • 10 $1.9700
  • 100 $1.2300
  • 500 $1.0800
$1.0800 / $2.7100 Buy Now
DISTI # IRF1407PBF-ND
DigiKey MOSFET N-CH 75V 130A TO220AB Min Qty: 1 Lead time: 10 Weeks Container: Tube 11003
In Stock
  • 1 $2.6600
  • 50 $1.2160
  • 100 $1.1368
  • 500 $1.0141
  • 1,000 $0.8695
$0.8695 / $2.6600 Buy Now
DISTI # IRF1407PBF
Avnet Americas Trans MOSFET N-CH 80V 130A 3-Pin(3+Tab) TO-220AB - Rail/Tube (Alt: IRF1407PBF) RoHS: Compliant Min Qty: 50 Package Multiple: 1 Lead time: 10 Weeks, 0 Days Container: Tube 726
  • 50 $0.8869
  • 60 $0.8824
  • 110 $0.7334
  • 250 $0.7296
  • 500 $0.7259
$0.7259 / $0.8869 Buy Now
DISTI # 63J7199
Avnet Americas Trans MOSFET N-CH 80V 130A 3-Pin(3+Tab) TO-220AB - Bulk (Alt: 63J7199) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 17 Weeks, 1 Days Container: Bulk 295 Partner Stock
  • 1 $2.7700
  • 10 $1.4500
  • 100 $1.2400
  • 500 $1.1500
  • 1,000 $1.1400
$1.1400 / $2.7700 Buy Now
DISTI # 942-IRF1407PBF
Mouser Electronics MOSFETs MOSFT 75V 130A 7.8mOhm 160nC RoHS: Compliant 1246
  • 1 $2.6600
  • 10 $2.3500
  • 25 $1.2300
  • 100 $1.1400
  • 500 $1.0100
  • 1,000 $0.8690
$0.8690 / $2.6600 Buy Now
DISTI # E02:0323_00175968
Arrow Electronics Trans MOSFET N-CH Si 75V 130A 3-Pin(3+Tab) TO-220AB Tube Min Qty: 1 Package Multiple: 1 Lead time: 10 Weeks Date Code: 2245 Europe - 2700
  • 1 $1.0740
  • 10 $1.0437
  • 25 $0.8433
  • 100 $0.8178
  • 500 $0.7904
  • 1,000 $0.7301
$0.7301 / $1.0740 Buy Now
DISTI # 87324367
Verical Trans MOSFET N-CH Si 75V 130A 3-Pin(3+Tab) TO-220AB Tube Min Qty: 255 Package Multiple: 1 Date Code: 2201 Americas - 11100
  • 255 $1.4750
$1.4750 Buy Now
DISTI # 85989263
Verical Trans MOSFET N-CH Si 75V 130A 3-Pin(3+Tab) TO-220AB Tube Min Qty: 255 Package Multiple: 1 Date Code: 2101 Americas - 3582
  • 255 $1.4750
$1.4750 Buy Now
DISTI # 64965043
Verical Trans MOSFET N-CH Si 75V 130A 3-Pin(3+Tab) TO-220AB Tube Min Qty: 8 Package Multiple: 1 Date Code: 2245 Americas - 2696
  • 8 $1.2638
$1.2638 Buy Now
DISTI # 87324395
Verical Trans MOSFET N-CH Si 75V 130A 3-Pin(3+Tab) TO-220AB Tube Min Qty: 255 Package Multiple: 1 Americas - 1285
  • 255 $1.4750
$1.4750 Buy Now
Rochester Electronics IRF1407 - 12V-300V N-Channel Power MOSFET RoHS: Compliant Status: Not Recommended for New Designs Min Qty: 1 16095
  • 100 $1.1800
  • 500 $1.0600
  • 1,000 $0.9802
  • 10,000 $0.8739
  • 100,000 $0.7322
$0.7322 / $1.1800 Buy Now
DISTI # IRF1407PBF
TME Transistor: N-MOSFET, unipolar, 75V, 130A, 330W, TO220AB Min Qty: 1 48
  • 1 $2.3500
  • 10 $1.9200
  • 50 $1.6000
  • 100 $1.4800
  • 250 $1.3100
  • 2,000 $1.0200
$1.0200 / $2.3500 Buy Now
DISTI # IRF1407PBF
IBS Electronics MOSFET POWER N-CH VDSS 75V RDS(ON) 0.0078 OHM ID 130A TO-220AB PD 330W VGS &#x2B, /-20 Min Qty: 15 Package Multiple: 1 3950
  • 15 $0.7865
  • 50 $0.7670
  • 200 $0.7475
  • 750 $0.7280
  • 2,500 $0.6890
$0.6890 / $0.7865 Buy Now
DISTI # TMOSP11717
Rutronik MOSFET 75V 130A RoHS: Compliant Min Qty: 50 Package Multiple: 50 Container: Tube Stock DE - 1050
Stock HK - 0
Stock US - 0
Stock SG - 0
  • 50 $1.0492
  • 150 $0.9893
  • 250 $0.9293
  • 550 $0.8394
  • 1,000 $0.8094
$0.8094 / $1.0492 Buy Now
Chip 1 Exchange INSTOCK 4226
RFQ
Cytech Systems Limited MOSFET N-CH 75V 130A TO220AB 7000
RFQ
DISTI # SP001564238
EBV Elektronik Trans MOSFET NCH 80V 130A 3Pin3Tab TO220AB (Alt: SP001564238) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 11 Weeks, 0 Days EBV - 0
Buy Now
LCSC 75V 130A 330W 7.8m10V78A 4V 1 N-channel TO-220AB MOSFETs ROHS 673
  • 1 $1.0275
  • 10 $0.8374
  • 50 $0.7423
  • 100 $0.6488
  • 500 $0.5930
  • 1,000 $0.5628
$0.5628 / $1.0275 Buy Now
Win Source Electronics MOSFET N-CH 75V 130A TO-220AB 31670
  • 90 $0.6713
  • 185 $0.6281
  • 290 $0.6064
  • 415 $0.5631
  • 535 $0.5415
  • 670 $0.5198
$0.5198 / $0.6713 Buy Now

Part Details for IRF1407PBF

IRF1407PBF CAD Models

IRF1407PBF Part Data Attributes

IRF1407PBF Infineon Technologies AG
Buy Now Datasheet
Compare Parts:
IRF1407PBF Infineon Technologies AG Power Field-Effect Transistor, 130A I(D), 75V, 0.0078ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-220AB, PLASTIC, TO-220AB, 3 PIN
Rohs Code Yes
Part Life Cycle Code Not Recommended
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Reach Compliance Code not_compliant
ECCN Code EAR99
Factory Lead Time 17 Weeks, 1 Day
Samacsys Manufacturer Infineon
Additional Feature AVALANCHE RATED, ULTRA-LOW RESISTANCE
Avalanche Energy Rating (Eas) 390 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 75 V
Drain Current-Max (ID) 130 A
Drain-source On Resistance-Max 0.0078 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
JESD-609 Code e3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 330 W
Pulsed Drain Current-Max (IDM) 520 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish Tin (Sn)
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IRF1407PBF

This table gives cross-reference parts and alternative options found for IRF1407PBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF1407PBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
IRF1407 International Rectifier Check for Price Power Field-Effect Transistor, 130A I(D), 75V, 0.0078ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN IRF1407PBF vs IRF1407
IRF1407PBF International Rectifier Check for Price Power Field-Effect Transistor, 130A I(D), 75V, 0.0078ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, PLASTIC, TO-220AB, 3 PIN IRF1407PBF vs IRF1407PBF

IRF1407PBF Related Parts

IRF1407PBF Frequently Asked Questions (FAQ)

  • The maximum operating temperature range for the IRF1407PBF is -55°C to 175°C.

  • To ensure reliability, follow proper thermal management, use a suitable heat sink, and ensure the device is operated within its specified voltage and current ratings.

  • The recommended gate drive voltage for the IRF1407PBF is between 10V and 15V, with a maximum gate-source voltage of ±20V.

  • Yes, the IRF1407PBF is suitable for high-frequency switching applications, but ensure that the device is operated within its specified frequency range and that proper thermal management is implemented.

  • Handle the device with proper ESD precautions, such as using an ESD wrist strap or mat, and ensure that the device is stored in an ESD-protected environment.

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