Part Details for IRF1405ZSTRLPBF by Infineon Technologies AG
Results Overview of IRF1405ZSTRLPBF by Infineon Technologies AG
- Distributor Offerings: (3 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (2 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
IRF1405ZSTRLPBF Information
IRF1405ZSTRLPBF by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IRF1405ZSTRLPBF
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
|
DISTI #
86112899
|
Verical | Trans MOSFET N-CH Si 55V 150A 3-Pin(2+Tab) D2PAK T/R Min Qty: 198 Package Multiple: 1 Date Code: 2001 | Americas - 151888 |
|
$1.9000 | Buy Now |
|
|
Rochester Electronics | IRF1405 - 12V-300V N-Channel Power MOSFET RoHS: Compliant Status: End of Life / Last Time Buy Min Qty: 1 | 151888 |
|
$0.9450 / $1.5200 | Buy Now |
|
DISTI #
SP001563116
|
EBV Elektronik | Trans MOSFET NCH 55V 150A 3Pin2Tab D2PAK TR (Alt: SP001563116) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Lead time: 143 Weeks, 0 Days | EBV - 0 |
|
Buy Now |
Part Details for IRF1405ZSTRLPBF
IRF1405ZSTRLPBF CAD Models
IRF1405ZSTRLPBF Part Data Attributes
|
|
IRF1405ZSTRLPBF
Infineon Technologies AG
Buy Now
Datasheet
|
Compare Parts:
IRF1405ZSTRLPBF
Infineon Technologies AG
Power Field-Effect Transistor, 75A I(D), 55V, 0.0049ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3
|
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 4 Weeks | |
| Samacsys Manufacturer | Infineon | |
| Avalanche Energy Rating (Eas) | 270 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 55 V | |
| Drain Current-Max (ID) | 75 A | |
| Drain-source On Resistance-Max | 0.0049 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 410 pF | |
| JEDEC-95 Code | TO-263AB | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 230 W | |
| Pulsed Drain Current-Max (IDM) | 600 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) - with Nickel (Ni) barrier | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IRF1405ZSTRLPBF
This table gives cross-reference parts and alternative options found for IRF1405ZSTRLPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF1405ZSTRLPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| IRF1405ZSTRRPBF | International Rectifier | Check for Price | Power Field-Effect Transistor, 75A I(D), 55V, 0.0049ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3 | IRF1405ZSTRLPBF vs IRF1405ZSTRRPBF |
| IRF1405ZSTRL | International Rectifier | Check for Price | Power Field-Effect Transistor, 75A I(D), 55V, 0.0049ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, D2PAK-3 | IRF1405ZSTRLPBF vs IRF1405ZSTRL |
IRF1405ZSTRLPBF Frequently Asked Questions (FAQ)
-
The maximum operating temperature range for the IRF1405ZSTRLPBF is -55°C to 175°C.
-
To ensure reliability, follow proper thermal management, use a suitable heat sink, and ensure the device is operated within its specified voltage and current ratings.
-
The recommended gate drive voltage for the IRF1405ZSTRLPBF is between 10V and 15V, with a maximum gate-source voltage of ±20V.
-
Yes, the IRF1405ZSTRLPBF is suitable for switching regulator applications due to its low RDS(on) and high switching frequency capabilities.
-
Handle the device with ESD-protective equipment, use an anti-static wrist strap, and store the device in an anti-static bag or container to prevent ESD damage.