Part Details for IRF1405ZSPBF by Infineon Technologies AG
Results Overview of IRF1405ZSPBF by Infineon Technologies AG
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (5 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (4 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
IRF1405ZSPBF Information
IRF1405ZSPBF by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IRF1405ZSPBF
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
IRF1405ZSPBF-ND
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DigiKey | MOSFET N-CH 55V 75A D2PAK Lead time: 39 Weeks Container: Tube | Limited Supply - Call |
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Buy Now |
Part Details for IRF1405ZSPBF
IRF1405ZSPBF CAD Models
IRF1405ZSPBF Part Data Attributes
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IRF1405ZSPBF
Infineon Technologies AG
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Datasheet
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Compare Parts:
IRF1405ZSPBF
Infineon Technologies AG
Power Field-Effect Transistor, 75A I(D), 55V, 0.0049ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Infineon | |
| Avalanche Energy Rating (Eas) | 270 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 55 V | |
| Drain Current-Max (ID) | 75 A | |
| Drain-source On Resistance-Max | 0.0049 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 410 pF | |
| JEDEC-95 Code | TO-263AB | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 230 W | |
| Pulsed Drain Current-Max (IDM) | 600 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | MATTE TIN OVER NICKEL | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IRF1405ZSPBF
This table gives cross-reference parts and alternative options found for IRF1405ZSPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF1405ZSPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| AUIRF1405ZS | International Rectifier | Check for Price | Power Field-Effect Transistor, 150A I(D), 55V, 0.0049ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, PLASTIC, D2PAK-3 | IRF1405ZSPBF vs AUIRF1405ZS |
| IRF1405ZSTRLPBF | International Rectifier | Check for Price | Power Field-Effect Transistor, 75A I(D), 55V, 0.0049ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3 | IRF1405ZSPBF vs IRF1405ZSTRLPBF |
| IRF1405ZSPBF | International Rectifier | Check for Price | Power Field-Effect Transistor, 75A I(D), 55V, 0.0049ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3 | IRF1405ZSPBF vs IRF1405ZSPBF |
| IRF1405ZSTRL | International Rectifier | Check for Price | Power Field-Effect Transistor, 75A I(D), 55V, 0.0049ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, D2PAK-3 | IRF1405ZSPBF vs IRF1405ZSTRL |
| IRF1405ZS | International Rectifier | Check for Price | Power Field-Effect Transistor, 75A I(D), 55V, 0.0049ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, D2PAK-3 | IRF1405ZSPBF vs IRF1405ZS |
IRF1405ZSPBF Frequently Asked Questions (FAQ)
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The maximum operating temperature range for the IRF1405ZSPBF is -55°C to 175°C.
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The IRF1405ZSPBF is a logic-level MOSFET, which means it can be driven directly by a microcontroller or other low-voltage logic device.
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The maximum current rating for the IRF1405ZSPBF is 140A, but this is dependent on the specific application and operating conditions.
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Yes, the IRF1405ZSPBF is suitable for high-frequency switching applications due to its low gate charge and fast switching times.
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The typical gate-source threshold voltage (Vgs(th)) for the IRF1405ZSPBF is around 2-4V, but this can vary depending on the specific device and operating conditions.