Part Details for IRF1405ZPBF by International Rectifier
Results Overview of IRF1405ZPBF by International Rectifier
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
IRF1405ZPBF Information
IRF1405ZPBF by International Rectifier is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IRF1405ZPBF
Part # | Distributor | Description | Stock | Price | Buy | |
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Rochester Electronics | IRF1405 - 12V-300V N-Channel Power MOSFET RoHS: Compliant Status: Not Recommended for New Designs Min Qty: 1 | 1030 |
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$1.1500 / $1.4400 | Buy Now |
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Vyrian | Transistors | 16703 |
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RFQ |
Part Details for IRF1405ZPBF
IRF1405ZPBF CAD Models
IRF1405ZPBF Part Data Attributes
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IRF1405ZPBF
International Rectifier
Buy Now
Datasheet
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IRF1405ZPBF
International Rectifier
Power Field-Effect Transistor, 75A I(D), 55V, 0.0049ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE, PLASTIC PACKAGE-3
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Transferred | |
Ihs Manufacturer | INTERNATIONAL RECTIFIER CORP | |
Part Package Code | TO-220AB | |
Package Description | LEAD FREE, PLASTIC PACKAGE-3 | |
Pin Count | 3 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Additional Feature | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | |
Avalanche Energy Rating (Eas) | 420 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 55 V | |
Drain Current-Max (ID) | 75 A | |
Drain-source On Resistance-Max | 0.0049 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-220AB | |
JESD-30 Code | R-PSFM-T3 | |
JESD-609 Code | e3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Peak Reflow Temperature (Cel) | 250 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 230 W | |
Pulsed Drain Current-Max (IDM) | 600 A | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Finish | MATTE TIN OVER NICKEL | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for IRF1405ZPBF
This table gives cross-reference parts and alternative options found for IRF1405ZPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF1405ZPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Manufacturer | Composite Price | Description | Compare |
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AUIRFZ46NS | International Rectifier | Check for Price | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | IRF1405ZPBF vs AUIRFZ46NS |
IRL2505SPBF | International Rectifier | Check for Price | Power Field-Effect Transistor, 104A I(D), 55V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK , 3 PIN | IRF1405ZPBF vs IRL2505SPBF |
IRFR014PBF | International Rectifier | Check for Price | Power Field-Effect Transistor, 7.7A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3 | IRF1405ZPBF vs IRFR014PBF |
IRFBA1404PPBF | International Rectifier | Check for Price | Power Field-Effect Transistor, 95A I(D), 40V, 0.0037ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-273AA, LEAD FREE, SUPER-220, 3 PIN | IRF1405ZPBF vs IRFBA1404PPBF |
MTP7P06 | Motorola Semiconductor Products | Check for Price | Power Field-Effect Transistor, 7A I(D), 60V, 0.6ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | IRF1405ZPBF vs MTP7P06 |
IRFR014TRRPBF | International Rectifier | Check for Price | Power Field-Effect Transistor, 7.7A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3 | IRF1405ZPBF vs IRFR014TRRPBF |
IRFR014 | International Rectifier | Check for Price | Power Field-Effect Transistor, 7.7A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | IRF1405ZPBF vs IRFR014 |
MTD8N06E | Motorola Semiconductor Products | Check for Price | Power Field-Effect Transistor, 8A I(D), 60V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, CASE 369A-13, DPAK-3 | IRF1405ZPBF vs MTD8N06E |
IRF3708PBF | International Rectifier | Check for Price | Power Field-Effect Transistor, 62A I(D), 30V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3 | IRF1405ZPBF vs IRF3708PBF |
AUIRFZ48ZSTRL | International Rectifier | Check for Price | Power Field-Effect Transistor, 61A I(D), 55V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, PLASTIC, D2PAK-3 | IRF1405ZPBF vs AUIRFZ48ZSTRL |
IRF1405ZPBF Frequently Asked Questions (FAQ)
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The maximum operating temperature range for the IRF1405ZPBF is -55°C to 175°C.
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The IRF1405ZPBF is a standard MOSFET, not a logic-level MOSFET. It requires a higher gate-source voltage to fully turn on.
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The maximum safe operating area (SOA) for the IRF1405ZPBF is limited by the maximum voltage and current ratings, as well as the thermal limitations. It's recommended to consult the datasheet and application notes for specific guidance.
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The IRF1405ZPBF is not optimized for high-frequency switching applications. It has a relatively high gate charge and output capacitance, which can lead to high switching losses and reduced efficiency. A more suitable MOSFET for high-frequency switching applications would be a device with lower gate charge and output capacitance.
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To ensure the IRF1405ZPBF is fully turned on and off, you should provide a sufficient gate-source voltage (Vgs) and a low impedance gate drive circuit. A Vgs of at least 10V is recommended for full turn-on, and a Vgs of 0V or slightly negative for full turn-off.