Datasheets
IRF1405ZPBF by:

Power Field-Effect Transistor, 75A I(D), 55V, 0.0049ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE, PLASTIC PACKAGE-3

Part Details for IRF1405ZPBF by International Rectifier

Results Overview of IRF1405ZPBF by International Rectifier

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Applications Consumer Electronics Energy and Power Systems Renewable Energy

IRF1405ZPBF Information

IRF1405ZPBF by International Rectifier is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for IRF1405ZPBF

Part # Distributor Description Stock Price Buy
Rochester Electronics IRF1405 - 12V-300V N-Channel Power MOSFET RoHS: Compliant Status: Not Recommended for New Designs Min Qty: 1 1030
  • 25 $1.4400
  • 100 $1.3700
  • 500 $1.3000
  • 1,000 $1.2200
  • 10,000 $1.1500
$1.1500 / $1.4400 Buy Now
Vyrian Transistors 16703
RFQ

Part Details for IRF1405ZPBF

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IRF1405ZPBF Part Data Attributes

IRF1405ZPBF International Rectifier
Buy Now Datasheet
Compare Parts:
IRF1405ZPBF International Rectifier Power Field-Effect Transistor, 75A I(D), 55V, 0.0049ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE, PLASTIC PACKAGE-3
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer INTERNATIONAL RECTIFIER CORP
Part Package Code TO-220AB
Package Description LEAD FREE, PLASTIC PACKAGE-3
Pin Count 3
Reach Compliance Code compliant
ECCN Code EAR99
Additional Feature AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
Avalanche Energy Rating (Eas) 420 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 55 V
Drain Current-Max (ID) 75 A
Drain-source On Resistance-Max 0.0049 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
JESD-609 Code e3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) 250
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 230 W
Pulsed Drain Current-Max (IDM) 600 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish MATTE TIN OVER NICKEL
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IRF1405ZPBF

This table gives cross-reference parts and alternative options found for IRF1405ZPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF1405ZPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
AUIRFZ46NS International Rectifier Check for Price Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET IRF1405ZPBF vs AUIRFZ46NS
IRL2505SPBF International Rectifier Check for Price Power Field-Effect Transistor, 104A I(D), 55V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK , 3 PIN IRF1405ZPBF vs IRL2505SPBF
IRFR014PBF International Rectifier Check for Price Power Field-Effect Transistor, 7.7A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3 IRF1405ZPBF vs IRFR014PBF
IRFBA1404PPBF International Rectifier Check for Price Power Field-Effect Transistor, 95A I(D), 40V, 0.0037ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-273AA, LEAD FREE, SUPER-220, 3 PIN IRF1405ZPBF vs IRFBA1404PPBF
MTP7P06 Motorola Semiconductor Products Check for Price Power Field-Effect Transistor, 7A I(D), 60V, 0.6ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB IRF1405ZPBF vs MTP7P06
IRFR014TRRPBF International Rectifier Check for Price Power Field-Effect Transistor, 7.7A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3 IRF1405ZPBF vs IRFR014TRRPBF
IRFR014 International Rectifier Check for Price Power Field-Effect Transistor, 7.7A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA IRF1405ZPBF vs IRFR014
MTD8N06E Motorola Semiconductor Products Check for Price Power Field-Effect Transistor, 8A I(D), 60V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, CASE 369A-13, DPAK-3 IRF1405ZPBF vs MTD8N06E
IRF3708PBF International Rectifier Check for Price Power Field-Effect Transistor, 62A I(D), 30V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3 IRF1405ZPBF vs IRF3708PBF
AUIRFZ48ZSTRL International Rectifier Check for Price Power Field-Effect Transistor, 61A I(D), 55V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, PLASTIC, D2PAK-3 IRF1405ZPBF vs AUIRFZ48ZSTRL

IRF1405ZPBF Related Parts

IRF1405ZPBF Frequently Asked Questions (FAQ)

  • The maximum operating temperature range for the IRF1405ZPBF is -55°C to 175°C.

  • The IRF1405ZPBF is a standard MOSFET, not a logic-level MOSFET. It requires a higher gate-source voltage to fully turn on.

  • The maximum safe operating area (SOA) for the IRF1405ZPBF is limited by the maximum voltage and current ratings, as well as the thermal limitations. It's recommended to consult the datasheet and application notes for specific guidance.

  • The IRF1405ZPBF is not optimized for high-frequency switching applications. It has a relatively high gate charge and output capacitance, which can lead to high switching losses and reduced efficiency. A more suitable MOSFET for high-frequency switching applications would be a device with lower gate charge and output capacitance.

  • To ensure the IRF1405ZPBF is fully turned on and off, you should provide a sufficient gate-source voltage (Vgs) and a low impedance gate drive circuit. A Vgs of at least 10V is recommended for full turn-on, and a Vgs of 0V or slightly negative for full turn-off.

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