Part Details for IRF1405PBF by International Rectifier
Results Overview of IRF1405PBF by International Rectifier
- Distributor Offerings: (4 listings)
- Number of FFF Equivalents: (3 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
IRF1405PBF Information
IRF1405PBF by International Rectifier is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IRF1405PBF
| Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | 99 |
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RFQ | ||
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Quest Components | 75 A, 55 V, 0.0053 OHM, N-CHANNEL, SI, POWER, MOSFET, TO-220AB | 882 |
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$0.9746 / $2.1188 | Buy Now |
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ComSIT USA | HEXFET Power MOSFET Power Field-Effect Transistor, 75A I(D), 55V, 0.0053ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB ECCN: EAR99 RoHS: Compliant |
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RFQ | |
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Vyrian | Transistors | 33893 |
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RFQ |
Part Details for IRF1405PBF
IRF1405PBF CAD Models
IRF1405PBF Part Data Attributes
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IRF1405PBF
International Rectifier
Buy Now
Datasheet
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Compare Parts:
IRF1405PBF
International Rectifier
Power Field-Effect Transistor, 75A I(D), 55V, 0.0053ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE, PLASTIC PACKAGE-3
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | INTERNATIONAL RECTIFIER CORP | |
| Part Package Code | TO-220AB | |
| Package Description | LEAD FREE, PLASTIC PACKAGE-3 | |
| Pin Count | 3 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Additional Feature | AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE | |
| Avalanche Energy Rating (Eas) | 560 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 55 V | |
| Drain Current-Max (ID) | 75 A | |
| Drain-source On Resistance-Max | 0.0053 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 330 W | |
| Pulsed Drain Current-Max (IDM) | 680 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | MATTE TIN OVER NICKEL | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IRF1405PBF
This table gives cross-reference parts and alternative options found for IRF1405PBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF1405PBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| IRF1405PBF | Infineon Technologies AG | $1.1268 | Power Field-Effect Transistor, 75A I(D), 55V, 0.0053ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-220AB, LEAD FREE, PLASTIC PACKAGE-3 | IRF1405PBF vs IRF1405PBF |
| IRF1405 | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 169A I(D), 55V, 0.0053ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN | IRF1405PBF vs IRF1405 |
| IRF1405 | International Rectifier | Check for Price | Power Field-Effect Transistor, 169A I(D), 55V, 0.0053ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN | IRF1405PBF vs IRF1405 |
IRF1405PBF Frequently Asked Questions (FAQ)
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The maximum operating temperature range for the IRF1405PBF is -55°C to 175°C.
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To ensure proper cooling, a heat sink with a thermal resistance of less than 1°C/W is recommended. Additionally, ensure good airflow around the device and avoid blocking the heat sink fins.
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The maximum gate-source voltage that can be applied to the IRF1405PBF is ±20V.
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Yes, the IRF1405PBF is suitable for high-frequency switching applications up to 1 MHz. However, ensure that the device is properly cooled and the gate drive circuit is optimized for high-frequency operation.
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To protect the IRF1405PBF from ESD, handle the device by the body or use an anti-static wrist strap. Ensure that the workspace and equipment are also ESD-protected.