Part Details for IRF140 by Infineon Technologies AG
Results Overview of IRF140 by Infineon Technologies AG
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (10 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
IRF140 Information
IRF140 by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IRF140
| Part # | Distributor | Description | Stock | Price | Buy | |
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Future Electronics | RoHS: Compliant pbFree: Yes Min Qty: 100 Package Multiple: 1 | 0 |
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$19.2000 / $19.2800 | Buy Now |
Part Details for IRF140
IRF140 CAD Models
IRF140 Part Data Attributes
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IRF140
Infineon Technologies AG
Buy Now
Datasheet
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IRF140
Infineon Technologies AG
Power Field-Effect Transistor, 28A I(D), 100V, 0.089ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE, MODIFIED TO-3, 2 PIN
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| Rohs Code | No | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | TO-3, 2 PIN | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Infineon | |
| Avalanche Energy Rating (Eas) | 250 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 28 A | |
| Drain-source On Resistance-Max | 0.089 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-204AE | |
| JESD-30 Code | O-MBFM-P2 | |
| JESD-609 Code | e0 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | METAL | |
| Package Shape | ROUND | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 125 W | |
| Pulsed Drain Current-Max (IDM) | 112 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | Tin/Lead (Sn/Pb) | |
| Terminal Form | PIN/PEG | |
| Terminal Position | BOTTOM | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IRF140
This table gives cross-reference parts and alternative options found for IRF140. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF140, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
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| IRF140 | Rochester Electronics LLC | Check for Price | 28A, 100V, 0.089ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AE, HERMETIC SEALED, MODIFIED TO-3, 2 PIN | IRF140 vs IRF140 |
| IRF140 | Intersil Corporation | Check for Price | 28A, 100V, 0.077ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AE | IRF140 vs IRF140 |
| IRF143 | Thomson Consumer Electronics | Check for Price | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | IRF140 vs IRF143 |
| IRF142 | Intersil Corporation | Check for Price | 25A, 100V, 0.1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AE | IRF140 vs IRF142 |
| IRF140 | Fairchild Semiconductor Corporation | Check for Price | Power Field-Effect Transistor, 27A I(D), 100V, 0.085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE, TO-204AE, 2 PIN | IRF140 vs IRF140 |
| IRF141 | Fairchild Semiconductor Corporation | Check for Price | Power Field-Effect Transistor, 27A I(D), 60V, 0.085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE, TO-204AE, 2 PIN | IRF140 vs IRF141 |
| IRF143 | FCI Semiconductor | Check for Price | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | IRF140 vs IRF143 |
| IRF140 | Vishay Siliconix | Check for Price | Power Field-Effect Transistor, 27A I(D), 100V, 0.085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204 | IRF140 vs IRF140 |
| IRF140-JQR-B | TT Electronics Resistors | Check for Price | Power Field-Effect Transistor, 28A I(D), 100V, 0.089ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3, HERMETIC SEALED, METAL PACKAGE-2 | IRF140 vs IRF140-JQR-B |
| IRF141 | Motorola Mobility LLC | Check for Price | 27A, 60V, 0.085ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AE | IRF140 vs IRF141 |
IRF140 Frequently Asked Questions (FAQ)
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The maximum safe operating area (SOA) for the IRF140 is not explicitly stated in the datasheet. However, according to Infineon's application note AN2013-01, the SOA can be estimated using the device's thermal impedance and maximum junction temperature. It's recommended to consult with Infineon's support team or a qualified engineer for a more accurate calculation.
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To minimize switching losses, ensure the IRF140 is driven with a high enough gate-source voltage (Vgs) to fully enhance the device. A Vgs of at least 10V is recommended. Additionally, use a gate driver with a low output impedance and a fast rise/fall time to minimize switching losses. It's also important to optimize the PCB layout to minimize parasitic inductance and capacitance.
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To minimize thermal resistance, it's recommended to use a PCB layout with a large copper area connected to the drain pad of the IRF140. This helps to dissipate heat efficiently. Additionally, use thermal vias to connect the copper area to a heat sink or a metal core PCB. Ensure the PCB material has a high thermal conductivity, such as FR4 or IMS.
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Yes, the IRF140 can be used in high-frequency switching applications. However, it's essential to consider the device's switching characteristics, such as the rise and fall times, and ensure the gate driver is capable of providing a high-frequency signal. Additionally, optimize the PCB layout to minimize parasitic inductance and capacitance, which can affect the device's high-frequency performance.
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To protect the IRF140 from overvoltage and overcurrent conditions, use a combination of voltage and current sensing circuits. Implement overvoltage protection (OVP) and overcurrent protection (OCP) circuits to detect and respond to fault conditions. Additionally, consider using a gate driver with built-in protection features, such as undervoltage lockout (UVLO) and overcurrent detection.