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Part Details for IRF1310NSTRLPBF by Infineon Technologies AG
Results Overview of IRF1310NSTRLPBF by Infineon Technologies AG
- Distributor Offerings: (20 listings)
- Number of FFF Equivalents: (1 replacement)
- CAD Models: (Available)
- Number of Functional Equivalents: (5 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
IRF1310NSTRLPBF Information
IRF1310NSTRLPBF by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IRF1310NSTRLPBF
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
13AC9171
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Newark | Mosfet, N-Ch, 100V, 42A, To-263Ab, Channel Type:N Channel, Drain Source Voltage Vds:100V, Continuous Drain Current Id:42A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:4V Rohs Compliant: Yes |Infineon IRF1310NSTRLPBF RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 710 |
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$0.7380 | Buy Now |
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DISTI #
86AK5347
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Newark | Mosfet, N-Ch, 100V, 42A, To-263Ab Rohs Compliant: Yes |Infineon IRF1310NSTRLPBF RoHS: Compliant Min Qty: 800 Package Multiple: 1 Date Code: 1 Container: Reel | 0 |
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$1.1500 / $1.1600 | Buy Now |
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DISTI #
IRF1310NSTRLPBFCT-ND
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DigiKey | MOSFET N-CH 100V 42A D2PAK Min Qty: 1 Lead time: 10 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) |
9004 In Stock |
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$0.8360 / $1.2400 | Buy Now |
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DISTI #
13AC9171
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Avnet Americas | Trans MOSFET N-CH 100V 42A 3-Pin(2+Tab) D2PAK T/R - Product that comes on tape, but is not reeled (Alt: 13AC9171) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 16 Weeks, 3 Days Container: Ammo Pack | 710 Partner Stock |
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$0.6080 / $1.5000 | Buy Now |
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DISTI #
IRF1310NSTRLPBF
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Avnet Americas | Trans MOSFET N-CH 100V 42A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel (Alt: IRF1310NSTRLPBF) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Lead time: 10 Weeks, 0 Days Container: Reel | 0 |
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$0.6409 / $0.6855 | Buy Now |
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DISTI #
IRF1310NSTRLPBF
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Avnet Americas | Trans MOSFET N-CH 100V 42A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel (Alt: IRF1310NSTRLPBF) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Lead time: 10 Weeks, 0 Days Container: Reel | 0 |
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$0.6518 / $0.6782 | Buy Now |
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DISTI #
942-IRF1310NSTRLPBF
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Mouser Electronics | MOSFETs MOSFT 100V 42A 36mOhm 73.3nC RoHS: Compliant | 11621 |
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$0.8360 / $1.2400 | Buy Now |
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DISTI #
V36:1790_13891267
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Arrow Electronics | Trans MOSFET N-CH 100V 42A 3-Pin(2+Tab) D2PAK T/R Min Qty: 800 Package Multiple: 800 Lead time: 10 Weeks Date Code: 2230 | Americas - 264000 |
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$0.8343 | Buy Now |
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DISTI #
E02:0323_00176899
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Arrow Electronics | Trans MOSFET N-CH 100V 42A 3-Pin(2+Tab) D2PAK T/R Min Qty: 800 Package Multiple: 800 Lead time: 10 Weeks Date Code: 2509 | Europe - 800 |
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$0.7873 | Buy Now |
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DISTI #
V72:2272_13891267
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Arrow Electronics | Trans MOSFET N-CH 100V 42A 3-Pin(2+Tab) D2PAK T/R Min Qty: 1 Package Multiple: 1 Lead time: 10 Weeks Date Code: 2019 Container: Cut Strips | Americas - 469 |
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$0.7147 / $0.7633 | Buy Now |
Part Details for IRF1310NSTRLPBF
IRF1310NSTRLPBF CAD Models
IRF1310NSTRLPBF Part Data Attributes
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IRF1310NSTRLPBF
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IRF1310NSTRLPBF
Infineon Technologies AG
Power Field-Effect Transistor, 42A I(D), 100V, 0.036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 16 Weeks, 3 Days | |
| Samacsys Manufacturer | Infineon | |
| Additional Feature | AVALANCHE RATED, HIGH RELIABILITY | |
| Avalanche Energy Rating (Eas) | 420 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 42 A | |
| Drain-source On Resistance-Max | 0.036 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 160 W | |
| Pulsed Drain Current-Max (IDM) | 140 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) - with Nickel (Ni) barrier | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IRF1310NSTRLPBF
This table gives cross-reference parts and alternative options found for IRF1310NSTRLPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF1310NSTRLPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| IRF1310NSTRL | International Rectifier | Check for Price | Power Field-Effect Transistor, 42A I(D), 100V, 0.036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, D2PAK-3 | IRF1310NSTRLPBF vs IRF1310NSTRL |
IRF1310NSTRLPBF Frequently Asked Questions (FAQ)
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The maximum operating temperature range for the IRF1310NSTRLPBF is -55°C to 175°C.
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To ensure reliability, it's essential to follow proper thermal management practices, such as providing adequate heat sinking, using thermal interface materials, and ensuring good airflow around the device.
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The recommended gate drive voltage for the IRF1310NSTRLPBF is between 10V and 15V, with a maximum gate-source voltage of ±20V.
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To protect the IRF1310NSTRLPBF from ESD, handle the device with anti-static wrist straps, mats, or bags, and ensure that the device is stored in a static-safe environment.
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The maximum allowable power dissipation for the IRF1310NSTRLPBF is 150W, but this value can be derated based on the operating temperature and other factors.