Part Details for IRF1310NSPBF by International Rectifier
Results Overview of IRF1310NSPBF by International Rectifier
- Distributor Offerings: (6 listings)
- Number of FFF Equivalents: (1 replacement)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (5 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
IRF1310NSPBF Information
IRF1310NSPBF by International Rectifier is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IRF1310NSPBF
| Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | 152 |
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Bristol Electronics | 33 |
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Bristol Electronics | 3 |
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Quest Components | TRANSISTOR,MOSFET,N-CHANNEL,100V V(BR)DSS,42A I(D),TO-263AB | 120 |
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$1.0633 / $2.1265 | Buy Now |
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Quest Components | TRANSISTOR,MOSFET,N-CHANNEL,100V V(BR)DSS,42A I(D),TO-263AB | 110 |
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$0.8625 / $1.7250 | Buy Now |
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ComSIT USA | Electronic Component RoHS: Compliant |
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RFQ |
Part Details for IRF1310NSPBF
IRF1310NSPBF CAD Models
IRF1310NSPBF Part Data Attributes
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IRF1310NSPBF
International Rectifier
Buy Now
Datasheet
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IRF1310NSPBF
International Rectifier
Power Field-Effect Transistor, 42A I(D), 100V, 0.036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | INTERNATIONAL RECTIFIER CORP | |
| Part Package Code | D2PAK | |
| Package Description | LEAD FREE, PLASTIC, D2PAK-3 | |
| Pin Count | 3 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Additional Feature | AVALANCHE RATED, HIGH RELIABILITY | |
| Avalanche Energy Rating (Eas) | 420 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 42 A | |
| Drain-source On Resistance-Max | 0.036 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-263AB | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation Ambient-Max | 120 W | |
| Power Dissipation-Max (Abs) | 160 W | |
| Pulsed Drain Current-Max (IDM) | 140 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) - with Nickel (Ni) barrier | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IRF1310NSPBF
This table gives cross-reference parts and alternative options found for IRF1310NSPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF1310NSPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| IRF1310NSTRL | International Rectifier | Check for Price | Power Field-Effect Transistor, 42A I(D), 100V, 0.036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, D2PAK-3 | IRF1310NSPBF vs IRF1310NSTRL |
IRF1310NSPBF Frequently Asked Questions (FAQ)
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The maximum operating temperature range for the IRF1310NSPBF is -55°C to 175°C.
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The IRF1310NSPBF is a standard MOSFET, which means it requires a higher gate-source voltage (typically 10V) to fully turn on.
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The maximum current rating for the IRF1310NSPBF is 13A continuous drain current.
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Yes, the IRF1310NSPBF is suitable for high-frequency switching applications due to its low gate charge and fast switching times.
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The maximum voltage rating for the IRF1310NSPBF is 100V drain-source voltage.