Part Details for IRF1310N by International Rectifier
Results Overview of IRF1310N by International Rectifier
- Distributor Offerings: (4 listings)
- Number of FFF Equivalents: (2 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (3 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
IRF1310N Information
IRF1310N by International Rectifier is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IRF1310N
| Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | 46 |
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RFQ | ||
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Quest Components | TRANSISTOR,MOSFET,N-CHANNEL,100V V(BR)DSS,42A I(D),TO-220AB | 36 |
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$1.8150 / $3.3000 | Buy Now |
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ComSIT USA | AVAILABLE EU | 261 |
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RFQ | |
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Win Source Electronics | Power MOSFET(Vdss=100V, Rds(on)=0.036ohm, Id=42A) | 15000 |
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$0.7401 / $1.1102 | Buy Now |
Part Details for IRF1310N
IRF1310N CAD Models
IRF1310N Part Data Attributes
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IRF1310N
International Rectifier
Buy Now
Datasheet
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IRF1310N
International Rectifier
Power Field-Effect Transistor, 42A I(D), 100V, 0.036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN
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| Pbfree Code | No | |
| Rohs Code | No | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | INTERNATIONAL RECTIFIER CORP | |
| Part Package Code | TO-220AB | |
| Package Description | TO-220AB, 3 PIN | |
| Pin Count | 3 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Additional Feature | AVALANCHE RATED | |
| Avalanche Energy Rating (Eas) | 420 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 42 A | |
| Drain-source On Resistance-Max | 0.036 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e0 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 160 W | |
| Pulsed Drain Current-Max (IDM) | 140 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | TIN LEAD | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IRF1310N
This table gives cross-reference parts and alternative options found for IRF1310N. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF1310N, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
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| IRF1310N | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 42A I(D), 100V, 0.036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN | IRF1310N vs IRF1310N |
| IRF1310NHR | International Rectifier | Check for Price | Power Field-Effect Transistor, 42A I(D), 100V, 0.036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN | IRF1310N vs IRF1310NHR |
IRF1310N Frequently Asked Questions (FAQ)
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The maximum safe operating area (SOA) for the IRF1310N is not explicitly stated in the datasheet, but it can be estimated based on the device's thermal characteristics and voltage/current ratings. As a general rule, it's recommended to operate the device within the boundaries of the SOA curve provided in the datasheet to ensure reliable operation.
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The junction-to-case thermal resistance (RθJC) for the IRF1310N can be calculated using the thermal resistance values provided in the datasheet. RθJC is typically calculated as the sum of the junction-to-lead (RθJL) and lead-to-case (RθLC) thermal resistances. For the IRF1310N, RθJC ≈ RθJL + RθLC = 0.5°C/W + 0.2°C/W = 0.7°C/W.
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The recommended gate drive voltage for the IRF1310N is typically between 10V to 15V, depending on the specific application and switching frequency. A higher gate drive voltage can help to reduce switching losses and improve device performance, but it may also increase the risk of gate oxide damage.
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Yes, the IRF1310N is suitable for high-frequency switching applications up to several hundred kHz. However, it's essential to consider the device's switching characteristics, such as the rise and fall times, and ensure that the gate drive circuitry is designed to minimize switching losses and prevent oscillations.
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To ensure the IRF1310N is properly biased for linear operation, it's essential to provide a stable gate-source voltage (VGS) and ensure that the device is operated within its recommended operating conditions. A gate-source voltage of around 4V to 5V is typically recommended for linear operation, and the drain-source voltage (VDS) should be limited to the device's maximum rating.