Part Details for IRF1205 by International Rectifier
Results Overview of IRF1205 by International Rectifier
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
IRF1205 Information
IRF1205 by International Rectifier is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IRF1205
| Part # | Distributor | Description | Stock | Price | Buy | |
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Quest Components | POWER FIELD-EFFECT TRANSISTOR, 20A I(D), 55V, 0.027OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-220AB | 17 |
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$23.9761 / $25.2380 | Buy Now |
Part Details for IRF1205
IRF1205 CAD Models
IRF1205 Part Data Attributes
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IRF1205
International Rectifier
Buy Now
Datasheet
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IRF1205
International Rectifier
Power Field-Effect Transistor, 20A I(D), 55V, 0.027ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN
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| Rohs Code | No | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | INTERNATIONAL RECTIFIER CORP | |
| Part Package Code | TO-220AB | |
| Package Description | FLANGE MOUNT, R-PSFM-T3 | |
| Pin Count | 3 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Additional Feature | AVALANCHE RATED | |
| Avalanche Energy Rating (Eas) | 190 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 55 V | |
| Drain Current-Max (ID) | 20 A | |
| Drain-source On Resistance-Max | 0.027 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e0 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 83 W | |
| Pulsed Drain Current-Max (IDM) | 164 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | TIN LEAD | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IRF1205
This table gives cross-reference parts and alternative options found for IRF1205. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF1205, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
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| IRF230EBPBF | Infineon Technologies AG | Check for Price | 9A, 200V, 0.49ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA | IRF1205 vs IRF230EBPBF |
| IRF232 | Rochester Electronics LLC | Check for Price | 8A, 200V, 0.6ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA | IRF1205 vs IRF232 |
| IRF130EC | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 14A I(D), 100V, 0.21ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, | IRF1205 vs IRF130EC |
| IRF131R | Harris Semiconductor | Check for Price | Power Field-Effect Transistor, 14A I(D), 80V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA | IRF1205 vs IRF131R |
| IRF130SMD-JQR-BR4 | TT Electronics Resistors | Check for Price | Power Field-Effect Transistor, 11A I(D), 100V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, SMD1, 3 PIN | IRF1205 vs IRF130SMD-JQR-BR4 |
| IRF233R | Harris Semiconductor | Check for Price | Power Field-Effect Transistor, 8A I(D), 150V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA | IRF1205 vs IRF233R |
| IRF230-QR-B | TT Electronics Power and Hybrid / Semelab Limited | Check for Price | 9A, 200V, 0.4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA, TO-3, 2 PIN | IRF1205 vs IRF230-QR-B |
| IRF140 | Harris Semiconductor | Check for Price | Power Field-Effect Transistor, 28A I(D), 100V, 0.077ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE | IRF1205 vs IRF140 |
| IRF130PBF | International Rectifier | Check for Price | Power Field-Effect Transistor, 14A I(D), 100V, 0.21ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, HERMETIC SEALED, MODIFIED TO-3, 2 PIN | IRF1205 vs IRF130PBF |
| JANTXV2N6758 | Harris Semiconductor | Check for Price | Power Field-Effect Transistor, 9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA | IRF1205 vs JANTXV2N6758 |
IRF1205 Frequently Asked Questions (FAQ)
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The maximum safe operating area (SOA) for the IRF1205 is not explicitly stated in the datasheet, but it can be estimated based on the device's voltage and current ratings. As a general rule, it's recommended to operate the device within 80% of its maximum voltage and current ratings to ensure safe operation.
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The junction-to-case thermal resistance (RθJC) for the IRF1205 is not directly provided in the datasheet. However, you can estimate it using the following formula: RθJC = (TJ - TC) / P, where TJ is the junction temperature, TC is the case temperature, and P is the power dissipation. You can use the thermal resistance values provided in the datasheet for the TO-220 package to estimate RθJC.
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The recommended gate drive voltage for the IRF1205 is typically between 10V to 15V, depending on the specific application and switching frequency. A higher gate drive voltage can improve switching speed and reduce losses, but it may also increase the risk of gate oxide damage.
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Yes, the IRF1205 can be used in high-frequency switching applications, but it's essential to consider the device's switching characteristics, such as the rise and fall times, and the gate charge. The IRF1205 has a relatively high gate charge, which can limit its switching frequency. Additionally, the device's parasitic capacitances and inductances can affect its high-frequency performance.
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To ensure proper cooling of the IRF1205, you should consider the device's power dissipation, thermal resistance, and junction temperature. Use a heat sink with a low thermal resistance, and ensure good thermal contact between the device and the heat sink. You can also use thermal interface materials, such as thermal paste or thermal tape, to improve heat transfer.