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Part Details for IRF1010NPBF by Infineon Technologies AG
Results Overview of IRF1010NPBF by Infineon Technologies AG
- Distributor Offerings: (10 listings)
- Number of FFF Equivalents: (1 replacement)
- CAD Models: (Available)
- Number of Functional Equivalents: (1 option)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Industrial Automation
IRF1010NPBF Information
IRF1010NPBF by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IRF1010NPBF
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
63J7171
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Newark | N Channel Mosfet, 55V, 85A To-220Ab, Channel Type:N Channel, Drain Source Voltage Vds:55V, Continuous Drain Current Id:85A, Transistor Mounting:Through Hole, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:4V, Msl:- Rohs Compliant: Yes |Infineon IRF1010NPBF RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk | 148 |
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$0.5400 / $1.5900 | Buy Now |
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DISTI #
IRF1010NPBF
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Avnet Americas | Trans MOSFET N-CH 55V 85A 3-Pin(3+Tab) TO-220AB - Rail/Tube (Alt: IRF1010NPBF) RoHS: Compliant Min Qty: 1000 Package Multiple: 100 Lead time: 111 Weeks, 0 Days Container: Tube | 0 |
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RFQ | |
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DISTI #
7887133
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Verical | Trans MOSFET N-CH Si 55V 85A 3-Pin(3+Tab) TO-220AB Tube Min Qty: 1000 Package Multiple: 1000 | Americas - 6000 |
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$0.6704 / $0.7051 | Buy Now |
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DISTI #
56032796
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Verical | Trans MOSFET N-CH Si 55V 85A 3-Pin(3+Tab) TO-220AB Tube Min Qty: 74 Package Multiple: 1 Date Code: 1939 | Americas - 123 |
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$1.0400 / $1.9100 | Buy Now |
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Bristol Electronics | Min Qty: 4 | 39 |
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$0.9750 / $1.5000 | Buy Now |
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Quest Components | 85 A, 55 V, 0.011 OHM, N-CHANNEL, SI, POWER, MOSFET, TO-220AB | 31 |
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$1.0000 / $2.0000 | Buy Now |
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Rochester Electronics | IRF1010NPBF - PLANAR 40<-<100V RoHS: Compliant Status: Not Recommended for New Designs Min Qty: 1 | 44 |
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$0.5284 / $0.8523 | Buy Now |
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DISTI #
IRF1010NPBF
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TME | Transistor: N-MOSFET, unipolar, 55V, 72A, 130W, TO220AB Min Qty: 1 | 248 |
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$0.6800 / $1.2700 | Buy Now |
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DISTI #
SP001563032
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EBV Elektronik | Trans MOSFET NCH 55V 85A 3Pin3Tab TO220AB (Alt: SP001563032) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 143 Weeks, 0 Days | EBV - 0 |
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Buy Now | |
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Win Source Electronics | MOSFET N-CH 55V 85A TO-220AB | 13830 |
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$0.6832 / $0.8824 | Buy Now |
Part Details for IRF1010NPBF
IRF1010NPBF CAD Models
IRF1010NPBF Part Data Attributes
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IRF1010NPBF
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IRF1010NPBF
Infineon Technologies AG
Power Field-Effect Transistor, 85A I(D), 55V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE, PLASTIC PACKAGE-3
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 111 Weeks | |
| Samacsys Manufacturer | Infineon | |
| Additional Feature | AVALANCHE RATED, ULTRA-LOW RESISTANCE | |
| Avalanche Energy Rating (Eas) | 250 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 55 V | |
| Drain Current-Max (ID) | 85 A | |
| Drain-source On Resistance-Max | 0.011 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 180 W | |
| Pulsed Drain Current-Max (IDM) | 290 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | Matte Tin (Sn) - with Nickel (Ni) barrier | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IRF1010NPBF
This table gives cross-reference parts and alternative options found for IRF1010NPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF1010NPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| IRF1010N | International Rectifier | Check for Price | Power Field-Effect Transistor, 75A I(D), 55V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN | IRF1010NPBF vs IRF1010N |
IRF1010NPBF Frequently Asked Questions (FAQ)
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The maximum operating temperature range for the IRF1010NPBF is -55°C to 175°C.
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To ensure reliability, follow proper thermal management, use a suitable heat sink, and ensure the device is operated within its specified voltage and current ratings.
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The recommended gate drive voltage for the IRF1010NPBF is between 10V and 15V, with a maximum gate-source voltage of ±20V.
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Yes, the IRF1010NPBF is suitable for high-frequency switching applications, but ensure that the device is operated within its specified frequency range and that proper thermal management is implemented.
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Handle the device with proper ESD precautions, such as using an ESD wrist strap or mat, and ensure that the device is stored in an ESD-protected environment.